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    ATC100 Price and Stock

    Apex Tool Group LLC WATC100F

    AUTOMATIC TIP CLEANER, FIBER BRU
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    DigiKey WATC100F Box 16 1
    • 1 $340.32
    • 10 $320
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    Mouser Electronics WATC100F 3
    • 1 $400
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    Apex Tool Group LLC WATC100M

    AUTOMATIC TIP CLEANER, METAL BRU
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    DigiKey WATC100M Box 7 1
    • 1 $340.32
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    Mouser Electronics WATC100M 5
    • 1 $400
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    Apex Tool Group LLC WATC100T

    REPLACEMENT TRAY FOR WATC100
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    DigiKey WATC100T Box 2 1
    • 1 $62.09
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    • 100 $48
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    Mouser Electronics WATC100T 5
    • 1 $60
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    Intel Corporation EPM3064ATC100-4

    IC CPLD 64MC 4.5NS 100TQFP
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    Intel Corporation EPF6016ATC100-2

    IC FPGA 81 I/O 100TQFP
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    Find more ATC100 price and stock on Findchips.com

    ATC100 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATC100A100GTN150X American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    ATC100A100GTN150X American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    ATC100A1R3CW150X American Technical Ceramics Ceramic Capacitor 1.3PF 150V .25PF NONSTND Original PDF
    ATC100A1R3CW150X American Technical Ceramics Ceramic Capacitor 1.3PF 150V .25PF NONSTND Original PDF
    ATC100A6R8KW150X American Technical Ceramics Ceramic Capacitor 6.8PF 150V 10% NONSTND Original PDF
    ATC100A6R8KW150X American Technical Ceramics Ceramic Capacitor 6.8PF 150V 10% NONSTND Original PDF
    ATC100A8R2BW150XT American Technical Ceramics Ceramic Capacitor 8.2PF 150V NONSTND Original PDF
    ATC100A8R2BW150XT American Technical Ceramics Ceramic Capacitor 8.2PF 150V NONSTND Original PDF
    ATC100B101JT500XT Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    ATC100B470JT500XT Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    ATC100B8R2BT250XT Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifiers Original PDF
    ATC100E120xxx American Technical Ceramics Porcelain High RF Power Multilayer Capacitors Scan PDF
    ATC100E301JT3600XT American Technical Ceramics Ceramic Capacitor 300PF 3.6KV P90 3838 Original PDF
    ATC100E301JT3600XT American Technical Ceramics Ceramic Capacitor 300PF 3.6KV P90 3838 Original PDF
    ATC100E510JT3600XT American Technical Ceramics Ceramic Capacitor 51PF 3.6KV P90 3838 Original PDF
    ATC100E510JT3600XT American Technical Ceramics Ceramic Capacitor 51PF 3.6KV P90 3838 Original PDF

    ATC100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12065G105AT2A

    Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    PTB 20245

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ

    DM74SL04

    Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
    Text: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs


    Original     		PDF S2079 SW-109 SWD-119 SW-394 SW-399 OT-26 SW-205 SW-206 SW-215 SW-216 DM74SL04 IC DM74LS04 SW109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419

    transistor b 595

    Abstract: ATC100A PH1819-45
    Text: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System


    Original     		PDF PHl819-45 transistor b 595 ATC100A PH1819-45

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    air variable capacitor

    Abstract: LET9045C M243 365 pF variable capacitor
    Text: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9045C 2002/95/EC LET9045C air variable capacitor M243 365 pF variable capacitor

    IrL 1540 N

    Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g

    303 2170 001

    Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.


    Original     		PDF BLF8G20LS-160V

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		PDF AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR3 AFT21S230SR3 AFT21S230-12SR3

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    ATC 1084

    Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


    Original     		PDF MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1

    Untitled

    Abstract: No abstract text available
    Text: ATC100 B Series Porcelain Superchi[f Multilayer Capacitors • Case B Size Capacitance Range .110" x . 110" 0.1 pF to 1000 pF • High Q Ultra-Stable Performance • Low ESR/ESL High Self-Resonance ELECTRICAL AND MECHANICAL • Low Noise Established Reliability (QPL)


    OCR Scan     		PDF ATC100

    Untitled

    Abstract: No abstract text available
    Text: ATC100 E Series Porcelain High RF Power Multilayer Capacitors • Case E Size .380" x .380" Capacitance Range 1 pF to 5100 pF • High Q Ultra-Stable Performance • Low ESR/ESL High RF Current/Voltage ELECTRICAL AND MECHANICAL • High RF Power High Reliability


    OCR Scan     		PDF ATC100

    atc100 b 101 j

    Abstract: No abstract text available
    Text: ATC100 C Series Porcelain High RF Power Multilayer Capacitors Case C Size Capacitance Range .250" x .250" 1 pF to 2700 pF ELECTRICAL AND MECHANICAL High Q Ultra-Stable Performance SPECIFICATIONS Low ESR/ESL High RF Current/Voltage High RF Power High Reliability


    OCR Scan     		PDF ATC100 atc100 b 101 j

    Untitled

    Abstract: No abstract text available
    Text: ATC100 A Series Porcelain Superchip3 Muitilayer Capacitors • Case A Size • Capacitance Range .055" x .055" • High Q 0.1 pF to 100 pF • Ultra-Stable Performance • Low ESR/ESL* High Self-Resonance • Low Noise • Established Reliability (QPL) ELECTRICAL AND MECHANICAL SPECIFI­


    OCR Scan     		PDF ATC100

    OSM248-2

    Abstract: 18PH 18ph diode sd301 022ph sd304 SD300 SD303 FT401
    Text: PIN CONFIGURATION GENERAL FEATURES • • • • • • • Lower cross-modulation and wider dynamic range than bipolar or single gate FETs Reverse AGC capability Linear mixing capability Diode protected gates High forward transconductance - gfs = 10,000umhos


    OCR Scan     		PDF 000umhos SD301 SD304 500MHz SD303 90IUUU OSM248-2 18PH 18ph diode sd301 022ph sd304 SD300 SD303 FT401

    transistor 1005 oj

    Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
    Text: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry


    OCR Scan     		PDF PH3135-5S ATC100A transistor 1005 oj transistor power rating 5w ATC100A PH3135-5S PIN07