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    MRF18030 Price and Stock

    Rochester Electronics LLC MRF18030BLSR3

    RF MOSFET 26V NI400
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    Rochester Electronics LLC MRF18030ALSR5

    RF MOSFET LDMOS 26V NI400
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    NXP Semiconductors MRF18030BLSR3

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    NXP Semiconductors MRF18030ALSR5

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    Freescale Semiconductor MRF18030ALSR5

    FET RF 65V 1.88GHZ NI-400S
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    Rochester Electronics MRF18030ALSR5 50 1
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    MRF18030 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF18030A Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF18030A Motorola RF Power Field Effect Transistors Original PDF
    MRF18030ALR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF18030ALR3 Motorola RF Power Field Effect Transistors Original PDF
    MRF18030ALSR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF18030ALSR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-400S Original PDF
    MRF18030ALSR3 Motorola RF Power Field Effect Transistors Original PDF
    MRF18030ALSR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-400S Original PDF
    MRF18030AR3 Freescale Semiconductor GSM/GSM EDGE 1.80-1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030AR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF18030AS Freescale Semiconductor FET, Enhancement, N Channel, 2 VThreshold Original PDF
    MRF18030ASR Motorola 1.8 - 1.88 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Original PDF
    MRF18030ASR3 Freescale Semiconductor GSM/GSM EDGE 1.80-1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030ASR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF18030B Freescale Semiconductor MRF18030BLR3, MRF18030BLSR3 1.93 - 1.99 GHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Original PDF
    MRF18030BLR3 Freescale Semiconductor GSM/GSM EDGE 1.93-1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030BLSR3 Freescale Semiconductor GSM/GSM EDGE 1.93-1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030BR3 Freescale Semiconductor GSM/GSM EDGE 1.93-1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030BR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF18030BR3 Motorola The Rf Mosfet Line Rf Power Field Effect Transistors N-Channel Enhancement - Mode Lateral Mosfets Original PDF

    MRF18030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF18030A

    Abstract: IRL 724 N 400S MRF18030ALR3 MRF18030ALSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3


    Original     		PDF MRF18030A/D MRF18030ALR3 MRF18030ALSR3 MRF18030ALR3 MRF18030A IRL 724 N 400S MRF18030ALSR3

    zo 405 mf

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 zo 405 mf

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 MRF18030A/D

    IRL 724 N

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 IRL 724 N

    IRL 724 N

    Abstract: ZO 405 marking j9 marking Z4 400S MRF18030B MRF18030BLR3 MRF18030BLSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N ZO 405 marking j9 marking Z4 400S MRF18030B MRF18030BLSR3

    motorola 522-11

    Abstract: j633
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF Suf60 MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 motorola 522-11 j633

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030A-1 Rev. 9, 10/2008 RF Power Field Effect Transistor MRF18030ALR3 Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A--1 MRF18030ALR3 MRF18030A--1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18030B Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3

    MRF18030A

    Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 MRF18030A 2019 gain 400S MRF18030ASR3 1003 c2 J1022

    400S

    Abstract: MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BLSR3


    Original     		PDF MRF18030B/D MRF18030BLR3 MRF18030BLSR3 MRF18030BLR3 400S MRF18030B MRF18030BLSR3 IRL 724 N

    HC-49/IRL 724 N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18030B Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 HC-49/IRL 724 N

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 MRF18030B/D

    IRL 724 N

    Abstract: IRL 724 J906 400S MRF18030B MRF18030BLR3 MRF18030BLSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N IRL 724 J906 400S MRF18030B MRF18030BLSR3

    IRL 724

    Abstract: IRL 724 N MRF18030A
    Text: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030ALSR3 IRL 724 IRL 724 N

    MRF18030A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030A-2 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A--2 MRF18030ALSR3 MRF18030A--2 MRF18030A

    MRF18030A

    Abstract: No abstract text available
    Text: Document Number: MRF18030A Rev. 10, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18030ALSR3 LIFETIME BUY Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF18030A MRF18030ALSR3 MRF18030A

    MRF18030A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 9, 10/2008 RF Power Field Effect Transistor MRF18030ALR3 Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030A

    MRF18030A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030ALSR3

    Motorola transistors M 724

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 Motorola transistors M 724

    marking j9

    Abstract: marking Z4 400S EB212 MRF18030A MRF18030ALSR3 MRF18030ALS
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18030ALSR3 LIFETIME BUY Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030ALSR3 MRF18030A marking j9 marking Z4 400S EB212 MRF18030A MRF18030ALSR3 MRF18030ALS

    400S

    Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 400S MRF18030A MRF18030ASR3

    IRL 724 N

    Abstract: HC-49/IRL 724 N
    Text: Document Number: MRF18030B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N HC-49/IRL 724 N

    400S

    Abstract: MRF18030B MRF18030BR3 MRF18030BSR3
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030B/D MRF18030BR3 MRF18030BSR3 400S MRF18030B MRF18030BSR3

    MRF18030ALSR3

    Abstract: HC-49/IRL 724 N
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 8, 5/2006 RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz.


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030ALSR3 MRF18030ALSR3 HC-49/IRL 724 N