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    3N84 Price and Stock

    Vishay Sfernice RSK33N84K5F

    SFERNICE THIN FILMS
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    DigiKey RSK33N84K5F Tray 100
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    SiTime Corporation SIT1408BI-12-33N-84.000000E

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 25ppm, 3.3V, 84MHz, OE, 1k pcs T&R 8 mm - Tape and Reel (Alt: SIT1408BI-12-33N-8)
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    Avnet Americas SIT1408BI-12-33N-84.000000E Reel 12 Weeks 1,000
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    SiTime Corporation SIT1408BI-12-33N-84.000000D

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 25ppm, 3.3V, 84MHz, OE, T&R - Tape and Reel (Alt: SIT1408BI-12-33N-8)
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    SiTime Corporation SIT1408BI-12-33N-84.000000G

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 25ppm, 3.3V, 84MHz, OE, 250 pcs T&R 8 mm - Tape and Reel (Alt: SIT1408BI-12-33N-8)
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    Avnet Americas SIT1408BI-12-33N-84.000000G Reel 12 Weeks 250
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    Vishay Intertechnologies RSK33N84K5F

    Wirebondable Dual Value Thin Film Chip Resistor Network 0303 Size 84.5K Ohm 1% 0.25 W ±25 ppm/°C Series 6-Pin SMD - Waffle Pack (Alt: RSK33N84K5F)
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    Avnet Americas RSK33N84K5F Waffle Pack 23 Weeks 100
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    Newark RSK33N84K5F Bulk 100
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    3N84 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N84 General Electric Semiconductor Data Book 1971 Scan PDF
    3N84 General Electric Semiconductor Data Handbook 1977 Scan PDF
    3N84 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    3N84 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    3N84 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N84 Unknown GE Transistor Specifications Scan PDF
    3N84 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    3N84 Unknown Cross Reference Datasheet Scan PDF
    3N84 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    3N841 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    3N84 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3n84

    Abstract: D29A4 C13P ring COUNTER SCR AUTOMOTIVE APPLICATIONS scr triggering 2N1770-8 C13F C13Y scs thyristor
    Text: SCR I e« I C11 S E R IE S SE E 2N1770-8 PAG E 322 The General Electric C13 Complementary Silicon Controlled Rectifier CSCR is a threeterminal, planar-passivated PN PN device in the standard, low-cost plastic TO-98 JE D E C pack­ age. As CSCR’s, the C13P and the C13Y offer greater flexibility in circuit design through the


    OCR Scan     		PDF 2N1770-8 D29A4 2N34I5 3n84 D29A4 C13P ring COUNTER SCR AUTOMOTIVE APPLICATIONS scr triggering C13F C13Y scs thyristor

    3N84

    Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp
    Text: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


    OCR Scan     		PDF 2NM46 2N327 3N84 2N4988 RCA SCR 2n 2N4991 3N81 2N4984 IN4I48 3N85 40v neon lamp

    2n2646 equivalent

    Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027

    2N4983

    Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference

    IR2E31A

    Abstract: IR2E27A IR2E09 Sharp IR2E27A IR2E27A SHARP IR2e01 IR2E12 Sharp IR2E09 1R2E31 IR2E27
    Text: Alphanumeric Index Alphanumeric Index Model No. IR2339 IR2339.V < IR2402 Page Model No. Page L78 178 101 < 'lR2C30N 1R2C32A 83 { IR2403 <! IR2405 56 38 < IR2406 608 608 < 1R2406G IR2408 ^ IR2410 [R2411 C IR2412A L IR2415 i IR2416 1, IR2419 / IR2422 Z IR2425


    OCR Scan     		PDF IR2339 IR2402 lR2C30N 1R2C32A JR2C33 IR3N34 IR2403 IR2405 IR2406 IR2E31A IR2E27A IR2E09 Sharp IR2E27A IR2E27A SHARP IR2e01 IR2E12 Sharp IR2E09 1R2E31 IR2E27

    2N6021

    Abstract: 2N4983 D5K2 3N83 D13H1 3N81 GE 2N6027 2N2160 2N2646 CIRCUIT 3N85
    Text: SPECIAL SILICON PRODUCTS SILICON CONTROL SWITCHES— SCS 28 Cutoff Charac­ teristics GE Type V ak !r- Anode Voltage Slocking (V) Continuous DC Forward Current (rnA) Peak Recurrent Forward Current (A) Cathode Gate Peak Current (m A) ( a 1 1OO//S0C Con­


    OCR Scan     		PDF 100//s 800L\ I0V-25V 2N6021 2N4983 D5K2 3N83 D13H1 3N81 GE 2N6027 2N2160 2N2646 CIRCUIT 3N85

    3n84

    Abstract: 3N81 TB4140V CG2-22-10 CG2-22-14 CG2-25-10 TB4100V TB4120V TB4160V 3N82
    Text: THYRISTORS , AT Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings V DWM TYPES 'o A V RWM (V) ITSM V RSM (10ms) (V) (A) lH V GT (V) 'GT ImA) rg k= V TM oo Im A ] (V) 345 A eff (rms) / tcase=80°C t(vj)=125°C l2t=80.000A2s


    OCR Scan     		PDF 000A2 CG2-22- CG2-22-10 CG2-22-14 10Kii 200mA 3n84 3N81 TB4140V CG2-25-10 TB4100V TB4120V TB4160V 3N82

    2n2646 equivalent

    Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2n2646 equivalent 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985

    3N81

    Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
    Text: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


    OCR Scan     		PDF

    2N2646 equivalent

    Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan     		PDF

    2n2646 equivalent

    Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2n2646 equivalent 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84

    GE TRIAC SC40B

    Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N4992 SC40B GE TRIAC SC40B 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt

    3N83

    Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
    Text: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


    OCR Scan     		PDF 20/iS' /3N83 3N83 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987

    3n84

    Abstract: 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81
    Text: SILICON U N I L A T E R A L A N D B I L A T E R A L SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


    OCR Scan     		PDF 200fi? IN4I48 IN4I46 500PPS 3n84 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81

    E355D

    Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
    Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20


    OCR Scan     		PDF

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


    OCR Scan     		PDF 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278