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    AD5791BRUZ Analog Devices 20bit, 2LSB, Unbuffered Ref Visit Analog Devices Buy
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    AD5781BRUZ-REEL7 Analog Devices 18bit, 1LSB, Unbuffered Ref Visit Analog Devices Buy
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    UNBUFFERED Price and Stock

    Nexperia 74LVC1GU04GS,132

    Inverters SOT1202-1 INVERTER UNBUFFERED
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    TTI 74LVC1GU04GS,132 Reel 5,000
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    Nexperia 74LVC1GU04GV,125

    Inverters SOT753-1 INVERTER UNBUFFERED
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    TTI 74LVC1GU04GV,125 Reel 12,000
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    Nexperia 74LVC1GU04GM,115

    Inverters SOT886-1 INVERTER UNBUFFERED
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    TTI 74LVC1GU04GM,115 Reel 10,000
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    Nexperia 74LVC1GU04GV-Q100H

    Inverters 74LVC1GU04GV-Q100/SOT753/SO5
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    TTI 74LVC1GU04GV-Q100H Reel 9,000
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    Nexperia 74LVC1GU04GW-Q100H

    Inverters 74LVC1GU04GW-Q100/SOT353/UMT5
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    TTI 74LVC1GU04GW-Q100H Reel 12,000
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    UNBUFFERED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SN54AHCU04, SN74AHCU04 HEX INVERTERS SCLS234G – OCTOBER 1995 – REVISED NOVEMBER 1999 D D D D D EPIC  Enhanced-Performance Implanted CMOS Process Operating Range 2-V to 5.5-V VCC Unbuffered Outputs Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per


    Original     		PDF SN54AHCU04, SN74AHCU04 SCLS234G MIL-STD-883, SN54AHCU04 SN74AHCU04

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 64Mx8 TS128MLQ64V6J TS128MLQ64V6J 64bits DDR2-667 16pcs 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		PDF 240PIN 512MB 64Mx8 TS64MLQ64V8J TS64MLQ64V8J 64bits DDR2-800 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs


    Original     		PDF 144PIN PC133 256MB 16MX16 TS32MSS64V6G 32Mx64 TS32MSS64V6G JEP-108E

    Untitled

    Abstract: No abstract text available
    Text: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil


    Original     		PDF 184PIN DDR333 1024MB 64Mx8 TS128MLD64V3J TS128MLD64V3J 64Mx64bits DDR333. 16pcs

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V8J Description Placement The TS128MLQ64V8J is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 64Mx8 TS128MLQ64V8J TS128MLQ64V8J 64bits DDR2-800 16pcs 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: SN54AHCU04, SN74AHCU04 HEX INVERTERS SCLS234K – OCTOBER 1995 – REVISED JULY 2003 D Operating Range 2-V to 5.5-V VCC Unbuffered Outputs Latch-Up Performance Exceeds 250 mA Per JESD 17 13 3 12 4 11 5 10 6 9 7 8 1Y 2A 2Y 3A 3Y 14 1Y 1A NC VCC 6A 1 SN54AHCU04 . . . FK PACKAGE


    Original     		PDF SN54AHCU04, SN74AHCU04 SCLS234K 000-V A114-A) A115-A) SN54AHCU04 AHCU04

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory


    Original     		PDF AMP366P1623BTE-C75/H AMP366P1623BTE-C75/H 400mil 168-pin 168-pin6 100MHz PC100

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72

    NL27WZU04DFT2G

    Abstract: NLV27WZU04DFT2G NL27WZU04DTT1G
    Text: NL27WZU04 Dual Unbuffered Inverter The NL27WZU04 is a high performance dual unbuffered inverter operating from a 1.65 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high−input impedance amplifier. For digital applications,


    Original     		PDF NL27WZU04 NL27WZ04 SC-88/SOT-363/SC-70 NL27WZU04/D NL27WZU04DFT2G NLV27WZU04DFT2G NL27WZU04DTT1G

    Untitled

    Abstract: No abstract text available
    Text: 74LVC1GU04 Inverter Rev. 11 — 2 July 2012 Product data sheet 1. General description The 74LVC1GU04 provides the inverting single state unbuffered function. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.


    Original     		PDF 74LVC1GU04 74LVC1GU04 JESD22-A114F JESD22-A115-A

    Untitled

    Abstract: No abstract text available
    Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:


    Original     		PDF M2S1G64CBH4B5P M2S2G64CB88B5N M2S4G64CB8HB5N PC3-8500 PC3-10600 PC3-12800 DDR3-1066/1333/1600 128Mx16 256Mx8

    A115-A

    Abstract: C101 SN74AHC1GU04 SN74AHC1GU04DBVR SN74AHC1GU04DCKR
    Text: SN74AHC1GU04 SINGLE INVERTER GATE SCLS343Q− APRIL 1996 − REVISED JUNE 2005 D Operating Range 2-V to 5.5-V VCC D Unbuffered Output D Latch-Up Performance Exceeds 250 mA Per D ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model A114-A − 200-V Machine Model (A115-A)


    Original     		PDF SN74AHC1GU04 SCLS343Q- 000-V A114-A) A115-A) SN74AHC1GU04 A115-A C101 SN74AHC1GU04DBVR SN74AHC1GU04DCKR

    M368L1624DTL

    Abstract: No abstract text available
    Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L1624DTL 184pin 128MB 16Mx64 16Mx16 64-bit M368L1624DTL

    M366S6453DTS

    Abstract: No abstract text available
    Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S6453DTS PC133/PC100 M366S6453DTS 64Mx64 32Mx8, 400mil 168-pin

    M366S0924ETS-C7A

    Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002


    Original     		PDF 128MB, 256MB 168pin 128Mb 62/72-bit M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


    Original     		PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E

    DDR2-667

    Abstract: PC2-5300 SSTL-18
    Text: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:


    Original     		PDF NT256T64UH4A1FY 256MB: 240pin 32Mx16 240-pin 32Mx64 84-ball DDR2-667 PC2-5300 SSTL-18

    NT512T64U88A0BY-37B

    Abstract: NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B NT512T64U88A0F PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A
    Text: NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY Green NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green) 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module


    Original     		PDF NT512T64U88A0F NT512T64U88A0B NT512T64U88A0BY NT1GT64U8HA0F NT1GT64U8HA0B NT1GT64U8HA0BY 512MB: 240pin 64Mx8 240-pin NT512T64U88A0BY-37B NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A

    M374S6453CTS

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M374S6453CTS M374S6453CTS 64Mx72 32Mx8, 400mil 168-pin

    M378T2953CZ3

    Abstract: 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108
    Text: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 256MB, 512MB, 240pin 512Mb 64/72-bit 32Mx64 M378T3354CZ3 M378T3354CZ0 K4T51163QC M378T2953CZ3 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108

    K4H560838E

    Abstract: DDR333
    Text: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003


    Original     		PDF 256MB, 512MB 184pin 256Mb 64/72-bit K4H560838E DDR333

    Untitled

    Abstract: No abstract text available
    Text: SN54AHCU04, SN74AHCU04 HEX INVERTERS SCLS234A - OCTOBER 1995 - REVISED MARCH 1996 SN54AHCU04 . . . J OR W PACKAGE SN74AHCU04. . . D, DB, N OR PW PACKAGE TOP VIEW Operating Range 2-V to 5.5-V V^c EPIC (Enhanced-Performance Implanted CMOS) Process Unbuffered Outputs


    OCR Scan     		PDF SN54AHCU04, SN74AHCU04 SCLS234A JESD-17 MIL-STD-883C, 300-mil

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB646 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M


    OCR Scan     		PDF MC-454CB646 64-BIT MC-454CB646 uPD4564163 MC-454CB646-A80 MC-454C B646-A10