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    UMK325C7106MMT Price and Stock

    TAIYO YUDEN UMK325C7106MM-T

    CAP CER 10UF 50V X7S 1210
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    DigiKey UMK325C7106MM-T Reel 477,700 500
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    UMK325C7106MM-T Cut Tape 90 1
    • 1 $0.56
    • 10 $0.373
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    UMK325C7106MM-T Digi-Reel 1
    • 1 $0.56
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    Avnet Americas UMK325C7106MM-T Ammo Pack 44 Weeks, 4 Days 1
    • 1 $0.426
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    Mouser Electronics UMK325C7106MM-T 549,253
    • 1 $0.56
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    Newark UMK325C7106MM-T Cut Tape 40,431 1
    • 1 $0.426
    • 10 $0.382
    • 100 $0.274
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    UMK325C7106MM-T Reel 500
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    UMK325C7106MM-T Cut Tape 500
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    UMK325C7106MM-T Reel 500
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    Onlinecomponents.com UMK325C7106MM-T 388,500
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    Bristol Electronics UMK325C7106MM-T 36,820
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    UMK325C7106MM-T 282
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    Quest Components UMK325C7106MM-T 7,142
    • 1 $0.279
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    UMK325C7106MM-T 1,504
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    TTI UMK325C7106MM-T Reel 37,000 500
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    Component Electronics, Inc UMK325C7106MM-T 9
    • 1 $1.54
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    UMK325C7106MM-T 5
    • 1 $1.54
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    Master Electronics UMK325C7106MM-T 388,500
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    New Advantage Corporation UMK325C7106MM-T 353,000 1
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    TAIYO YUDEN CE UMK325 C7106MM-T

    Multilayer Ceramic Capacitor, 10 uF, 50 V, ± 20%, X7S, 1210 [3225 Metric] - Tape and Reel (Alt: UMK325C7106MM-T)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CE UMK325 C7106MM-T Reel 542,000 11 Weeks 500
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    TAIYO YUDEN CEUMK325C7106MM-T

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    Bristol Electronics CEUMK325C7106MM-T 500
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    Master Electronics CEUMK325C7106MM-T 388,500
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    . UMK325C7106MM-T

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    Bristol Electronics UMK325C7106MM-T 18
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    UMK325C7106MMT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UMK325C7106MM-T Taiyo Yuden Ceramic Capacitors, Capacitors, CAP CER 10UF 50V 20% X7S 1210 Original PDF

    UMK325C7106MMT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J499

    Abstract: No abstract text available
    Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4 28ances. J499

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    Untitled

    Abstract: No abstract text available
    Text: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features


    Original     		PDF PXAC260602FC PXAC260602FC 60-watt H-37248-4

    Untitled

    Abstract: No abstract text available
    Text: PTFC262157SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157SH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum


    Original     		PDF PTFC262157SH PTFC262157SH H-34288G-4/2 c262157sh-gr1

    J103 transistor

    Abstract: transistor c223
    Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB072707FH PTFB072707FH b072707fh-gr1 J103 transistor transistor c223

    SEK4

    Abstract: No abstract text available
    Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with


    Original     		PDF PTFC262808FV PTFC262808FV 280-watt H-37275G-6/2 SEK4

    Untitled

    Abstract: No abstract text available
    Text: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output


    Original     		PDF PXFC192207FH PXFC192207FH 220-watt

    RC0603FR-710KL

    Abstract: rc0603fr-072kl GMK107BJ105KA LM10500 NC7SZ125M5X AN-2080
    Text: National Semiconductor Application Note 2080 Yang Zhang August 29, 2011 LM10500 Overview Applications The LM10500 is a 5 A Energy Management Unit EMU that actively reduces system level power consumption by utilizing a continuous, real-time, closed-loop Adaptive Voltage Scaling


    Original     		PDF LM10500 AN-2080 RC0603FR-710KL rc0603fr-072kl GMK107BJ105KA NC7SZ125M5X AN-2080

    Untitled

    Abstract: No abstract text available
    Text: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path


    Original     		PDF PXAC201602FC PXAC201602FC 140-watt H-37248-4 10ubstances.

    Untitled

    Abstract: No abstract text available
    Text: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design,


    Original     		PDF PTVA093002TC PTVA093002TC 300-watt 50-ohm

    Untitled

    Abstract: No abstract text available
    Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4 pxac201202fc-gr1a

    Untitled

    Abstract: No abstract text available
    Text: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2496 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features


    Original     		PDF PXAC261002FC PXAC261002FC 100-watt

    Untitled

    Abstract: No abstract text available
    Text: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features


    Original     		PDF PXAC260602FC PXAC260602FC 60-watt H-37248-4

    Untitled

    Abstract: No abstract text available
    Text: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output


    Original     		PDF PTAB182002TC PTAB182002TC 180-watt H-49248H-4

    Untitled

    Abstract: No abstract text available
    Text: PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum


    Original     		PDF PTFC262157FH PTFC262157FH H-34288G-4/2 c262157sh-gr1 48stances.

    Untitled

    Abstract: No abstract text available
    Text: PTAC260302FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to


    Original     		PDF PTAC260302FC PTAC260302FC 30-watt

    IDT9020

    Abstract: IDTP9030 IDTP9035 IDTP9020 schematic diagram of phone charger IWAS4832FFE 56LD
    Text: Industry’s First Multi-Mode WPC Compliant Wireless Power Receiver IC Product Datasheet IDTP9020 Features Description • Single-Chip 5W Solution for Wireless Power Consortium WPC “Qi” Compliant Power Receiver • Conforms to WPC Specification Version 1.1


    Original     		PDF IDTP9020 IDTP9020 IDT9020 IDTP9030 IDTP9035 schematic diagram of phone charger IWAS4832FFE 56LD

    AN2042

    Abstract: AN-2042 ECJ1VC2A101J NC7SZ125 UMK107B7104KA-T UMK325C7106MM-T UMK325C7106MMT C3216X7R1E105K GMK107BJ105KA LM21305
    Text: National Semiconductor Application Note 2042 Yang Zhang March 17, 2010 LM21305 Overview The device features internal over voltage protection OVP and over current protection (OCP) circuits for increased system reliability. A precision enable pin and integrated UVLO


    Original     		PDF LM21305 28-pin AN-2042 AN2042 AN-2042 ECJ1VC2A101J NC7SZ125 UMK107B7104KA-T UMK325C7106MM-T UMK325C7106MMT C3216X7R1E105K GMK107BJ105KA

    UMK325C7106MMT

    Abstract: No abstract text available
    Text: PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package


    Original     		PDF PXAC241702FC PXAC241702FC UMK325C7106MMT

    Untitled

    Abstract: No abstract text available
    Text: PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,


    Original     		PDF PXAC261202FC PXAC261202FC 120-watt

    Untitled

    Abstract: No abstract text available
    Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    Untitled

    Abstract: No abstract text available
    Text: Bill of Materials for the NCV8853GEVB Evaluation Board Designator Quantity C1 C2, C3, C4 C5 C6 C7 C8 D1 L1 Q1 R1 R2 R3, R5 R4 R6 TP2, TP3, TP4, TP5, TP6, TP7, TP8, TP9, TP10 U1 1 3 1 1 1 1 1 1 1 1 1 2 1 DNP 9/7/2012 Description Value CAP CER 0.1UF 50V 10% X7R 0603


    Original     		PDF NCV8853GEVB 6800PF 6800pF 470PF 470pF 100UF 100uF 1/10W GCM188R71H104KA57D

    4871I

    Abstract: No abstract text available
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208SV PTFB213208SV 320-watt H-37275G-6/2 4871I