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    PXAC201202FC Price and Stock

    MACOM PXAC201202FC-V2

    RF MOSFET LDMOS 28V H-37248-4
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    DigiKey PXAC201202FC-V2 Tray
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    MACOM PXAC201202FC-V2-R0

    RF MOSFET LDMOS 28V H-37248-4
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    Mouser Electronics PXAC201202FC-V2-R0
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    MACOM PXAC201202FC-V2-R250

    RF MOSFET LDMOS 28V H-37248-4
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    DigiKey PXAC201202FC-V2-R250 Reel
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    Mouser Electronics PXAC201202FC-V2-R250
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    PXAC201202FC Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PXAC201202FC-V2 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PXAC201202FC-V2-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4 Original PDF
    PXAC201202FCV2R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4 Original PDF
    PXAC201202FC-V2-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PXAC201202FCV2R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PXAC201202FCV2XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PXAC201202FC Datasheets Context Search

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    J499

    Abstract: No abstract text available
    Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4 28ances. J499

    Untitled

    Abstract: No abstract text available
    Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4 pxac201202fc-gr1a

    Untitled

    Abstract: No abstract text available
    Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA