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    PTFC262808FV Price and Stock

    MACOM PTFC262808FV-V1

    RF MOSFET LDMOS 28V H-37275G-6
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    DigiKey PTFC262808FV-V1 Tray
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    MACOM PTFC262808FV-V1-R0

    RF MOSFET LDMOS 28V H-37275G-6
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    DigiKey PTFC262808FV-V1-R0 Reel 50
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    MACOM PTFC262808FV-V1-R250

    RF MOSFET LDMOS 28V H-37275G-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFC262808FV-V1-R250 Reel 250
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    PTFC262808FV Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFC262808FV-V1 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS Original PDF
    PTFC262808FV-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS Original PDF
    PTFC262808FVV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS Original PDF
    PTFC262808FV-V1-R250 Wolfspeed IC AMP RF LDMOS Original PDF
    PTFC262808FVV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS Original PDF

    PTFC262808FV Datasheets Context Search

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    SEK4

    Abstract: No abstract text available
    Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with


    Original     		PDF PTFC262808FV PTFC262808FV 280-watt H-37275G-6/2 SEK4

    Untitled

    Abstract: No abstract text available
    Text: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with


    Original     		PDF PTFC262808FV PTFC262808FV 280-watt H-37275G-6/2

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF