PTAB182002TC Search Results

PTAB182002TC Price and Stock

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Infineon Technologies AG PTAB182002TCV2R250XUMA1 RF MOSFET LDMOS 28V H-37248-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTAB182002TCV2R250XUMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG PTAB182002TCV2R250X Power LDMOS Transistor N-Channel 65V 4-Pin H-49248H T/R - Tape and Reel (Alt: PTAB182002TCV2R250XUMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PTAB182002TCV2R250X	Reel			250	1 - 10 - 100 - 1000 - 10000 -	Get Quote

PTAB182002TC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTAB182002TCV2R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC RF FET LDMOS 190W H-49248H-4		Original	PDF
PTAB182002TCV2R250XUMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF

PTAB182002TC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output	Original	PTAB182002TC PTAB182002TC 180-watt H-49248H-4	PDF
Untitled Abstract: No abstract text available Text: Preliminary PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805	Original	PTAB182002TC PTAB182002TC 190-watt	PDF
Untitled Abstract: No abstract text available Text: PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805	Original	PTAB182002TC PTAB182002TC 180-watt H-44248H-4	PDF
PTFB090901EA Abstract: No abstract text available Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA	PDF