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    UPA809T Search Results

    UPA809T Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPA809T Unknown SMD, High Frequency Amplifier, 9V 100mA 110mW 9GHz, Silicon NPN Transistor (integrated circuit) Original PDF
    UPA809T NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD Original PDF
    UPA809T NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    uPA809T NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD Original PDF
    UPA809TF NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA809T-T1 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD Original PDF
    uPA809T-T1 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD Original PDF

    UPA809T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    All similar transistor

    Abstract: NE688 S21E UPA809TF transistor outline package 3 8003* transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • UPA809TF PACKAGE OUTLINE TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1


    Original     		PDF OT-363 UPA809TF UPA809TF NE688 UPA809TF-T1, 24-Hour All similar transistor S21E transistor outline package 3 8003* transistor

    S21E

    Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		PDF UPA809T NE688 UPA809T 24-Hour S21E UPA809T-T1 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350

    npn dual emitter RF Transistor

    Abstract: RF TRANSISTOR 1.5 GHZ NE688 S21E UPA809T UPA809T-T1 transistor C 110 high power transistor 6 GHz
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz


    Original     		PDF UPA809T NE688 UPA809T UPA809T-T1, 24-Hour npn dual emitter RF Transistor RF TRANSISTOR 1.5 GHZ S21E UPA809T-T1 transistor C 110 high power transistor 6 GHz

    q2.048

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.8e-16 MJC 0.48 135.7 XCJC 0.56 NF 1 CJS VAF 28 VJS 0.75 IKF 0.6 MJS ISE 3.8e-15 FC 0.75 NE 1.49 TF 9e-12 BR 12.3 XTF 0.36 NR 1.1 VTF 0.65 0.61 VAR 3.5 ITF IKR 0.06


    Original     		PDF UPA809T 8e-16 8e-15 5e-16 796e-12 45e-12 9e-12 32e-12 24-Hour q2.048

    cascode transistor array VCO

    Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
    Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually


    Original     		PDF AN1028 UPA808T cascode transistor array VCO UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T transistor RF S-parameters

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    UPA801T

    Abstract: UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T


    Original     		PDF UPA800T UPA809T UPA801T UPA810T UPA802T UPA811T UPA806T UPA812T UPA807T UPA814T UPA801T UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ . SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package * LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: f t = 9 GHz . HIGH COLLECTOR CURRENT: 100 mA UPA809T


    OCR Scan     		PDF NE688 UPA809T UPA809T UPA809T-T1 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA809T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD FEATU RES PACKAGE DRAW INGS • Low V o lta g e O p e ra tio n , Low Phase D is to rtio n • Low N oise (U n it: m m )


    OCR Scan     		PDF uPA809T 2SC5193)

    KAG TRANSISTOR

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES SM A LL PAC KAG E STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH G AIN BANDW IDTH: fr = 9 GHz


    OCR Scan     		PDF NE688 UPA809T UPA809T UPA809T-T1 KAG TRANSISTOR

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


    OCR Scan     		PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363

    NE68018

    Abstract: 814T
    Text: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89


    OCR Scan     		PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T