inverter 2001v
Abstract: CY7C408A CY7C409A CY7C408A-15PC
Text: 1CY 7C40 9A CY7C408A CY7C409A 64 x 8 Cascadable FIFO 64 x 9 Cascadable FIFO Features • • • • • • • • • • • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory 35-MHz shift in and shift out rates Almost Full/Almost Empty and Half Full flags
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Original
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CY7C408A
CY7C409A
35-MHz
50-ns)
CY7C408A)
300-mil,
28-pin
CY7C408A
CY7C409A
64-word
inverter 2001v
CY7C408A-15PC
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PDF
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afe 1000
Abstract: cypress fifo cy7c408A CY7C408A CY7C409A
Text: CY7C408A CY7C409A 64 x 8 Cascadable FIFO 64 x 9 Cascadable FIFO Features • • • • • • • • • • • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory 35-MHz shift in and shift out rates Almost Full/Almost Empty and Half Full flags
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Original
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CY7C408A
CY7C409A
35-MHz
50-ns)
CY7C408A)
300-mil,
28-pin
CY7C408A
CY7C409A
64-word
afe 1000
cypress fifo cy7c408A
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PDF
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CY7C408A
Abstract: CY7C409A inverter 2001v CY7C409A-25PC
Text: CY7C408A CY7C409A 64 x 8 Cascadable FIFO 64 x 9 Cascadable FIFO Features D D D D D D D D D D D AFE is HIGH when the FIFO is almost full or almost empty, otherwise AFE is LOW. HF is HIGH when the FIFO is half full, otherwise HF is LOW. 64 x 8 and 64 x 9 firstĆin firstĆout
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Original
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CY7C408A
CY7C409A
35MHz
CY7C408A)
300mil,
28pin
CY7C408A
CY7C409A
inverter 2001v
CY7C409A-25PC
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PDF
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CY7C408A
Abstract: CY7C409A
Text: 09A CY7C408A CY7C409A 64 x 8 Cascadable FIFO 64 x 9 Cascadable FIFO Features • • • • • • • • • • • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory 35-MHz shift in and shift out rates Almost Full/Almost Empty and Half Full flags
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Original
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CY7C408A
CY7C409A
35-MHz
50-ns)
CY7C408A)
300-mil,
28-pin
CY7C408A
CY7C409A
64-word
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PDF
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PALCE29M16
Abstract: PALCE29M16H PALCE29M16H-25 PD3024
Text: FINAL COM’L: H-25 Advanced Micro Devices PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability
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Original
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PALCE29M16H-25
24-Pin
28-pin
PALCE29M16
PALCE29M16H
PALCE29M16H-25
PD3024
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PDF
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PALCE29M16H/4
Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Text: FINAL COM’L: H-25 Lattice/Vantis PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability
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Original
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PALCE29M16H-25
24-Pin
28-pin
PALCE29M16H/4
PALCE29M16
PALCE29M16H
PALCE29M16H-25
PD3024
|
PDF
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PALCE29M16
Abstract: PALCE29M16H PALCE29M16H-25 PD3024
Text: FINAL COM’L: H-25 PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability
|
Original
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PALCE29M16H-25
24-Pin
28-pin
PALCE29M16
PALCE29M16H
PALCE29M16H-25
PD3024
|
PDF
|
gal programming algorithm
Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Text: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE
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Original
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PALCE29M16H-25
24-Pin
gal programming algorithm
PALCE29M16
PALCE29M16H
PALCE29M16H-25
PD3024
|
PDF
|
pt 2358
Abstract: gal programming algorithm PALCE29MA16 PALCE29MA16H-25 PD3024 IOE14
Text: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ ■ ■ ■ ■ Register/Latch Preload permits full logic
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Original
|
PALCE29MA16H-25
24-Pin
pt 2358
gal programming algorithm
PALCE29MA16
PALCE29MA16H-25
PD3024
IOE14
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PDF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM5V72A100A N-Series 1M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A1COA is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V4400B in 20/26 pin SOJ or TSOR-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit
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OCR Scan
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HYM5V72A100A
72-bit
HYM5V72A1COA
HY51V4400B
16-bit
HYM5V72A100ATNG/ASLTNG
DQ0-DQ71)
1EC03-20-AUG95
HYM5V72A1OOA
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PDF
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5v RAS 0610
Abstract: No abstract text available
Text: •HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO m ode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1
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OCR Scan
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HYM5V64124A
64-bit
HY51V18164B
TheHYM5V64124ARG/ATRG/ASLRG/ASLTFiG
DQ0-DQ63)
06-10-APR95
1EC06-10-MAR96
5v RAS 0610
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM5V64200A X-Series 2M X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64200A is a 2M x 64-bit Fast page mode CMOS DRAM module consisting of eight HY51V16160B in 42/42 pin SOJ or 44/50pin TSOR two 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy
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OCR Scan
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HYM5V64200A
64-bit
HY51V16160B
44/50pin
16-bit
HYM5V64200AXG/ASLXG/ATXG/ASLTXG
321ED03-10-AUG9S
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PDF
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HYUNDAI i10
Abstract: ha1930 HYM5V64414
Text: "HYUNDAI HYM5V64414A N-Series 4M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY51V17404A in 24/28 pin SOJ or TSOR-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.
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OCR Scan
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HYM5V64414A
64-bit
HY51V17404A
16-bit
HYM5V64414ANG/ATNG/ASLNG/ASLTNG
18-OmW
A0-A10
DQ0-DQ63)
HYUNDAI i10
ha1930
HYM5V64414
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PDF
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048bit EEPROM on a 168 pin
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OCR Scan
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HYM572A224A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A224ARG/ASLRG/ATRG/ASLTRG
01CKQ2SXMX.
012SQ18)
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PDF
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|
|
Untitled
Abstract: No abstract text available
Text: • H Y U N D A I H Y M 5V 64214A Z -S e r ie s SO DIMM 2M X 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION Ttie HYM5V64214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V178046 in 28/28 pin SOJ or TSOR-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit board. 0.22pF
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OCR Scan
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4214A
64-bit
HYM5V64214A
HY51V178046
HYM5V64214AZG/AT2G/ASLZGiASLTZG
1EC07-1O-FEB96
HVM5V64214AZG
HYM5V64214ASLZG
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PDF
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TSOR 32
Abstract: No abstract text available
Text: OKI semiconductor MSM62780 CMOS 8-BIT SINGLE CHIP MICROCONTROLLER WITH 8K BYTES E2PROM GENERAL DESCRIPTION The MSM62780 is a CMOS singfe-chip microcontroller with on-board 8K BYTE E2PROM fo r applications such as IC-cards, etc. The powerful instruction set consists of 114 instructions including special instructions for IC cards, exe
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OCR Scan
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MSM62780
MSM62780
800ns
TSOR 32
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PDF
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Untitled
Abstract: No abstract text available
Text: OKI semiconductor MSM62780 CMOS 8-BIT SINGLE CHIP MICROCONTROLLER WITH 8K BYTES E2PROM GENERAL DESCRIPTION The MSM62780 is a CMOS single-chip microcontroller with on-board 8K BYTE E2PROM for applications such as IC-cards, etc. The powerful instruction set consists of 114 instructions including special instructions for IC cards, exe
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OCR Scan
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MSM62780
MSM62780
800ns
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PDF
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SG-10 32,768Khz
Abstract: 32.768khz 5ppm 400KHZ 768KHZ SG-10 76.800k Seiko Epson
Text: SEI KO / EP SO N AMER-, CMPNT 33 b4 134 00 00 1^ 3 77T « E P S S7E J> 7^ 5 -0 - 2 J SIP TYPE LOW/MEDIUM FREQUENCY CRYSTAL OSCILLATOR SG-10 • Use of C -M O S IC allows low current consumption • Small size, high density mounting possible • M ountable on the standard printed board
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OCR Scan
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33bm34
DD00n3
SG-10
0000Hz
6000KHz
768KHZ,
000KHZ,
600KHZ
SG-10 32,768Khz
32.768khz 5ppm
400KHZ
768KHZ
SG-10
76.800k
Seiko Epson
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PDF
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Untitled
Abstract: No abstract text available
Text: EPSON P F 756-02 SRM20512LLMT85/10 512K-Bit Static RAM • Industrial Tem perature Range • L o w Supply C urrent •A c c e s s Time 85ns/100ns • 6 5 ,5 3 6 W ordsx8-bit Asynchronous I DESCRIPTION The SRM20512LLMT85/1O is a 65,536 wordsx8-bit asynchronous, static, random access memory on a monolithic
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OCR Scan
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SRM20512LLMT85/10
512K-Bit
85ns/100ns
SRM20512LLMT85/1O
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PDF
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J-300
Abstract: KM68257C KM68257
Text: KM68257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM . FEATURES . GENERAL DESCRIPTION • Fast Aoeess Time 12 , 15 ,2 0 ns- Max.f • Low Power Dissipation ' i Standby (TTL : 40 mA (Max.) (CMOS): 2 mA (Max.) •100 )iA(Max.) - L- Ver. Operating KM68257C/CL-12:1 6 5 mA (Max.)
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OCR Scan
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KM68257C
32Kx8
KM68257C/CL-12
KM68257C/CL-15
KM68257C/CL-20
KM682S7CP/CLP
28-DIP-300
257CJ/CLJ
J-300
KM68257CTG/CLTG
KM68257
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM62780_ CMOS 8-BIT SINGLE CHIP MICROCONTROLLER WITH 8K BYTES EzPROM GEN ERAL DESCRIPTION The MSM62780 is a CM O S single-chip microcontroller with on-board 8K BYTE E2PROM for applications such as IC-cards, etc. The powerful instruction set consists of 114 instructions including special instructions for IC cards, exe
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OCR Scan
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MSM62780_
MSM62780
800ns
|
PDF
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KM62256CLP-7L
Abstract: km62256clg-7 km62256clg-7l
Text: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • . The KM62256C fam ily is fabricated by SAMSUNG'S advanced CMOS process technology. The fam ily supports various operating temperature ranges and has various package types for user
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OCR Scan
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KM62256C
32Kx8
28-TSOP1
KM62256CL
KM62256CL-L
KM62256CLE-L
KM62256CLI
KM62256CLP-7L
km62256clg-7
km62256clg-7l
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PDF
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65b0
Abstract: LT 6516 HYB39 238k
Text: n r k jir fc if 3 IL IV IC IX 3 S u m m arv o f Tvoes - - - - - - - - - - *• R lö m n r ir I n n iin jn n a n f e R i i v n i v i j1 w u r f / v i i v i i w Memory Components 4l\lt OR AMS HYB 51 xxxG B J L - 60 40 45 50 00 C rv » p /H = 40 * 45 = 50
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OCR Scan
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GU-60
65b0
LT 6516
HYB39
238k
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PDF
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KM62256DLGI-7
Abstract: package tsop1 28 KM62256DLP-7 28-TSOP1 KM62256DLG km62256dlp-7l ZI55 km62256dlg-7 KM62256DLG7
Text: KM62256D Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM62256D family is fabricated by SAMSUNG'S advanced CMOS process technology. The family support various operat ing temperature ranges and has various package types for user
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OCR Scan
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KM62256D
32Kx8
28-DIP-600B,
28-SOP-450
28-TSOP1
KM62256DL
KM62256DL-L
KM62256DLI
KM62256DLGI-7
package tsop1 28
KM62256DLP-7
KM62256DLG
km62256dlp-7l
ZI55
km62256dlg-7
KM62256DLG7
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PDF
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