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    HYB39 Price and Stock

    Qimonda AG HYB39S128800FE-7

    SDRAM - 128Mbit - 143MHz - 54-Lead TSOP.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com HYB39S128800FE-7 5,612
    • 1 $15.58
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    • 100 $3.1
    • 1000 $2.85
    • 10000 $2.7
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    Infineon Technologies AG HYB39S64800ET-7

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    Bristol Electronics HYB39S64800ET-7 1,490
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    Infineon Technologies AG HYB39S256400CT-7.5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HYB39S256400CT-7.5 34 1
    • 1 $14.04
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    Qimonda AG HYB39SC128160FE-6

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    Infineon Technologies AG HYB39S256400T-8

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    Bristol Electronics HYB39S256400T-8 9 1
    • 1 $51.48
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    HYB39 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HYB39 Infineon Technologies MEMORY SPECTRUM Original PDF
    HYB39D128160TC-3 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TC-37 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TC-5 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TC-6 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TC-7 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TC-75 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TC-7F Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TC-8 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TCL-3 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TCL-37 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TCL-5 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TCL-7 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TCL-75 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TCL-7F Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TE-3 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TE-37 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TE-5 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TE-6 Infineon Technologies Memory Spectrum Original PDF
    HYB39D128160TE-7 Infineon Technologies Memory Spectrum Original PDF
    ...

    HYB39 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYB39SC128169EE-7

    Abstract: HYB39SC128169EE
    Text: October 2006 HYB39SC128169EE HYB39SC128329EE 128-MBit Synchronous DRAM Green Product SDRAM Internet Data Sheet Rev. 1.00 Internet Data Sheet HYB39SC128[16/32]9EE 128-MBit Synchronous DRAM Revision History: 2006-10, Rev. 1.0 All Adapted internet edition All


    Original     		PDF HYB39SC128169EE HYB39SC128329EE 128-MBit HYB39SC128 rev400 10302006-7FCJ-R0SX 128ce. HYB39SC128169EE-7

    DMX RECEIVER

    Abstract: HYB39 HYB39D32322TQ LQFP100 infineon sgram SGRAM
    Text: Memories for Graphics Systems 32Mbit DDR SGRAM HYB39D32322TQ -6 -A2 Die revision A2 User’s Manual Version 2.12 06.2000 Edition 06.2000 This edition was realized using the software system FrameMaker. Published by Infineon Technologies, Marketing-Kommunikation,


    Original     		PDF 32Mbit HYB39D32322TQ DMX RECEIVER HYB39 LQFP100 infineon sgram SGRAM

    Siemens SCR components Data Manual

    Abstract: HYB39S16320TQ HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 SIEMENS BST t
    Text: Memories for Graphics Systems 16M Synchronous Graphics RAM SGRAM HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 Version 2.1.00 Preliminary Information SGRAM 1.1999 HYB39S16320TQ-6/-7/-8 Revision History: Current Version 2.1.00 Previous Version: 1.x.xx Page


    Original     		PDF HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 HYB39S16320TQ-6/-7/-8 HYB39S16320TQ-6 TQFP-100 20x14mm² MS-026 Siemens SCR components Data Manual HYB39S16320TQ HYB39S16320TQ-7 HYB39S16320TQ-8 SIEMENS BST t

    marking code EY SMD

    Abstract: PC100-222-620 P-TSOPII-54
    Text: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN


    Original     		PDF HYB39L256160AC/T 256MBit 16Mbit P-TFBGA-54, PC133 SPT03919-3 marking code EY SMD PC100-222-620 P-TSOPII-54

    HYB39S256400FE-7

    Abstract: HYI39S256160FE7 HYB39S256160FT-7 hyb39s256800fe HYB39S256800FE-7 HYB39S256400FF-7 HYB39S256407FE HYB39S256160 HYB39S256160FE HYI39S256160
    Text: September 2007 HY[B/I]39S256[40/80/16]0FT L HY[B/I]39S256[40/80/16]0FE(L) HYB39S256[40/80/16]0FF(L) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.42 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM


    Original     		PDF 39S256 HYB39S256 HYB39S 256-MBit HYB39S256400FE-7 HYI39S256160FE7 HYB39S256160FT-7 hyb39s256800fe HYB39S256800FE-7 HYB39S256400FF-7 HYB39S256407FE HYB39S256160 HYB39S256160FE HYI39S256160

    ISO 8015

    Abstract: HYB39SC256 "ISO 8015" PC166-333 HYI39SC256160FE-6 Qimonda AG HYB
    Text: June 2007 HYB39SC256[80/16]0FE HYI39SC256[80/16]0FF 256-MBit Synchronous DRAM Green Product SDRAM Internet Data Sheet Rev. 1.25 Internet Data Sheet HY[B/I]39SC256[80/16]0F[E/F] 256-MBit Synchronous DRAM HYB39SC256[80/16]0FE, HYI39SC256[80/16]0FF Revision History: 2007-06, Rev. 1.25


    Original     		PDF HYB39SC256 HYI39SC256 256-MBit 39SC256 ISO 8015 "ISO 8015" PC166-333 HYI39SC256160FE-6 Qimonda AG HYB

    39S256160DT-7

    Abstract: HYB39S256400D PC133-222-520 PC166
    Text: Data Sheet, Rev. 1.02, Feb. 2004 HYB39S256400D[C/T] L HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB39S256400D HYB39S256800D HYB39S256160D 256-MBit P-TSOPII-54 GPX09039 10072003-13LE-FGQQ HYB39S256 TFBGA-54 39S256160DT-7 PC133-222-520 PC166

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command


    Original     		PDF HYB39S16160CT-6/-7 16MBit GPX05956 P-TSOPII-50

    Untitled

    Abstract: No abstract text available
    Text: September 2006 HYB39S C12880 0 FE HYB39S C12816 0 FE HYI39SC128800FE HYI39SC128160FE 128-MBit Synchronous DRAM Green Product SDRAM Internet Data Sheet Rev. 1.00 Internet Data Sheet HY[B/I]39SC128[800/160]FE 128-MBit Synchronous DRAM Revision History: Rev. 1.00, 2006-09


    Original     		PDF HYB39S C12880 C12816 HYI39SC128800FE HYI39SC128160FE 128-MBit 39SC128

    39S16802AT-10

    Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation


    Original     		PDF HYB39S1640x/80x/16xAT-8/-10 16MBit 39S16802AT-10 Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T

    active suspension

    Abstract: No abstract text available
    Text: HYB39S1640x/80x/16xAT 16MBit Synchronous DRAM Timing Diagrams 1. Bank Activate Command Cycle 2. Burst Read Operation 3. Read Interrupted by a Read 4. Read to Write Interval 4.1 Read to Write Interval 4.2 Minimum Read to Write Interval 4.3 Non-Minimum Read to Write Interval


    Original     		PDF HYB39S1640x/80x/16xAT 16MBit active suspension

    P-TSOPII-54

    Abstract: 39S64160BT-7 39S64160AT-5
    Text: HYB39S64160A/BT-5.5/-6/-7 64MBit Synchronous DRAM 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic


    Original     		PDF HYB39S64160A/BT-5 64MBit P-TSOPII-54 GPX09039 P-TSOPII-54 39S64160BT-7 39S64160AT-5

    PC133-333

    Abstract: P-TSOPII-54 hyb39s64400
    Text: HYB39S64400/800/160A/BT L 64MBit Synchronous DRAM Ultra High Speed 64 MBit Synchronous DRAM PC143 & PC133 • High Performance: -7 -7.5 Units fCKmax. 143 133 MHz tCK3 7 7.5 ns tAC3 5.4 5.4 ns tCK2 10 10 ns tAC2 5.5 6 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S64400/800/160A/BT 64MBit PC143 PC133 P-TSOPII-54 400mil PC143 PC133 PC133-333 hyb39s64400

    39S256160T

    Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
    Text: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S256400/800/160T 256MBit P-TSOPII-54 400mil PC100 3-2T10 HYB39S256400/800/160AT 39S256160T PC100-322-620 smd CAY PC100-322

    Untitled

    Abstract: No abstract text available
    Text: March 2007 HYB39S128400F[E/T] L HY[B/I]39S128800F[E/T](L) HY[B/I]39S128160F[E/T](L) HYB39S 128407 F E 128-MBit Synchronous DRAM Green Product SDRAM Internet Data Sheet Rev. 1.3 Internet Data Sheet HY[B/I]39S128[40/80/16][0/7]F[E/T](L) 128-MBit Synchronous DRAM


    Original     		PDF HYB39S128400F 39S128800F 39S128160F HYB39S 128-MBit 39S128

    HYB39S256160FE

    Abstract: HYB39S256160FE-7
    Text: March 2007 HY[B/I]39S256[40/80/16]0FT L HY[B/I]39S256[40/80/16]0FE(L) HYB39S256[40/80/16]0FF(L) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.3 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM


    Original     		PDF 39S256 HYB39S256 HYB39S 256-MBit HYB39S256160FE HYB39S256160FE-7

    P-TSOPII-54

    Abstract: PC133 registered reference design
    Text: HYB39S512400/800/160AT L 512MBit Synchronous DRAM 512 MBit Synchronous DRAM Preliminary Datasheet April ’01 • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns


    Original     		PDF HYB39S512400/800/160AT 512MBit P-TSOPII-54 400mil PC166 PC133 PC133 registered reference design

    39S256160DT-7

    Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
    Text: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil P-TSOPII-54 GPX09039 TFBGA-54 39S256160DT-7 HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOP-54-2

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7


    OCR Scan     		PDF HYB39S16160CT-6/-7 16MBit

    SEM t11

    Abstract: 39S16800 39S16800AT-8 Q1323 q1333
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command


    OCR Scan     		PDF HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil SEM t11 39S16800 39S16800AT-8 Q1323 q1333

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled


    OCR Scan     		PDF HYB39S64400/800/160AT 64MBit

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    OCR Scan     		PDF HYB39S16400/800/160CT-8/-10 16MBit

    PQFP128

    Abstract: HYB39M83200 HYB39M83200L HYB39M83200Q HYB39M93200 HYB39M93200L HYB39M93200Q PLCC68 PQFP-128 TQFP-100
    Text: 288k x 32 / 256k x 32 M ULTIBANK DRAM M DRAM HYB39M93200 HYB39M83200 Preliminary Information * Ultra-High Performance 666 M B yte/sec single device transfer rate 36 ns RAS access 13.8 ns CAS access 6 ns burst cycle * Multibank Architecture RAS and precharge may overlap CAS READ or W R ITE to different banks effectively hiding


    OCR Scan     		PDF HYB39M93200 HYB39M83200 HYB39M93200Q 288kx PQFP128 HYB39M93200L PLCC68 HYB39M83200Q 256kx PQFP128 HYB39M83200 HYB39M83200L PLCC68 PQFP-128 TQFP-100

    Untitled

    Abstract: No abstract text available
    Text: HYB39V64x0yT 64MBit Virtual Channel SDRAM SIEM ENS 64MBit Virtual Channel SDRAM 1 Advanced Information • • • • • • • • • • • • • • • • 1.1 Fully Standard Synchronous Dynamic RAM, with all signals referenced to a positive clock edge


    OCR Scan     		PDF 64MBit HYB39V64x0yT