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    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y M 5 V 7 2 A 1 2 0 A 1M X X - S e r ie s 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A120A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of two HY51V4400B in 20/26 pin SOJ or TSOP-II, four HY51V18160B 42/42 pin SOJ or 44/50 pin TSOP-li and two 16-bit BiCMOS line driver


    OCR Scan     		72-bit HYM5V72A120A HY51V4400B HY51V18160B 16-bit HYM5V72A120AXG/ASLXG/ATXG/ASLTXG 1EC07-10-AUG95 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V641OOA N-Series 1M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64100A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit


    OCR Scan     		HYM5V641OOA 64-bit HYM5V64100A HY51V4400B 16-bit HYM5V64100 1EC04-10-AUG95 PDF

    tractel

    Abstract: s8m9
    Text: •HYUNDAI HY51V4400B Series 1M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V4400B TTL0/26 1AC12-00-MAY94 HY51V4400BJ HY51V4400BU HY51V4400BSU tractel s8m9 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HY U N DA I HYM5V321OOA N-Series IM X 32-blt CMOS DRAM MODULE DESCRIPTION The HYM5V32100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY51V4400B in 2G/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor


    OCR Scan     		HYM5V321OOA 32-blt HYM5V32100A 32-bit HY51V4400B 2G/26 HYM5V321OOATNG/ASLTNG DQ0-DQ31) 1DC01-11-AUG95 PDF

    Untitled

    Abstract: No abstract text available
    Text: • H Y U N D A I HY51V4400B Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit.The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V4400B 0200J06) 1AC12-10-MAY95 HY51V4400BJ HY51V4400BLJ HY51V4400BSLJ PDF

    U2506

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y M 5 V 7 2 1 3 A N - S e r i e s 1 M x 72_bjt CM 0S DRAM MODULE DESCRIPTION The HYM5V72103A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II, two HY51V4403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in


    OCR Scan     		HYM5V72103A 72-bit HY51V4400B HY51V4403B 16-bit HYM5V72103ANG/ATNG/ASLNG/ASLTNG SL-part35) 1EC13-10-AUG95 HYM5V72103ANG U2506 PDF

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 5 1 V 4 4 0 0 B S e r ie s 1 M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V4400B HY51V4400B 1AC12-00-MAY94 HY51V4400BJ HY51V4400BU HY51V4400BSU HY51V4400BT HY51V4400BLT PDF

    MQ40

    Abstract: No abstract text available
    Text: HY51V4400B Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipa­


    OCR Scan     		HY51V4400B HY51V4400BJ HY51V4400BLJ HY51V4400BSLJ HY51V4400BT HY51V4400BLT 128ms 011Jul MQ40 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V72A100A N-Series 1M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A1COA is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY51V4400B in 20/26 pin SOJ or TSOR-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit


    OCR Scan     		HYM5V72A100A 72-bit HYM5V72A1COA HY51V4400B 16-bit HYM5V72A100ATNG/ASLTNG DQ0-DQ71) 1EC03-20-AUG95 HYM5V72A1OOA PDF

    1AC12

    Abstract: No abstract text available
    Text: HY51V4400B Series • HYUNDAI 1M X 4-bit CMOS DRAM DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit.The HY51V4400B utilizes Hyundai's C M OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V4400B HY51V4400B 4400B 1AC12 10-MAY95 HY51V4400BJ HY51V4400BLJ HY51V4400BSLJ PDF

    d 100 d

    Abstract: Y514100A HYM532220
    Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"


    OCR Scan     		HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V72A220A X-Series 1M X 7 2-b it CMOS DRAM MODULE DESCRIPTION The HYM5V72A220A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of four HY51V4400B in 20/26 pin TSOP-II, eight HY51V18160B 44/50pin TSOP-II and four 16-bit BiCMOS line driver in TSSOPon a 168 pin


    OCR Scan     		HYM5V72A220A 72-bit HY51V4400B HY51V18160B 44/50pin 16-bit 22jiF HYM5V72A220ATXG/ASLTXG RAS0-RA53) PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU PDF

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B PDF

    HY51V4403B

    Abstract: csi40
    Text: HYUNDAI H Y 5 1 V 4 4 0 3 B S e r ie s 1M x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION Tine HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		HY51V4403B 0SCK127 1AC16-00-MAYM HY51V4403BJ HY51V4403BU HY51V4403BSU csi40 PDF

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260 PDF

    HY5118160

    Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
    Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		256K-bits HY53C256. HY53C464 HY531000. DB101-20-MAY94 HY5118160 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF

    Untitled

    Abstract: No abstract text available
    Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16


    OCR Scan     		32814A 32810A 536A804AM HYM536A814AM 36810A HY5117404AJ/AT HY5117400AJ/AT HY5116404AJ HY5117404AJ PDF