Untitled
Abstract: No abstract text available
Text: TSOPII50-P-400-0.80-1K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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TSOPII50-P-400-0
80-1K
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Untitled
Abstract: No abstract text available
Text: TSOPII50-P-400-0.80-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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TSOPII50-P-400-0
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Untitled
Abstract: No abstract text available
Text: TSOPII50/44-P-400-0.80-1K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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TSOPII50/44-P-400-0
80-1K
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tsopII50
Abstract: No abstract text available
Text: TSOPII50/44-P-400-0.80-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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TSOPII50/44-P-400-0
tsopII50
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Untitled
Abstract: No abstract text available
Text: E2G0144-18-11 ¡ Semiconductor MD51V65160 ¡ Semiconductor This version:MD51V65160 Mar. 1998 4,194,304-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MD51V65160 is a 4,194,304-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
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E2G0144-18-11
MD51V65160
304-Word
16-Bit
MD51V65160
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MSM51V16165D
Abstract: MSM51V16165DSL SOJ42-P-400-1
Text: Pr E2G0132-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16165D/DSL achieves high integration, high-speed operation,
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E2G0132-17-61
576-Word
16-Bit
MSM51V16165D/DSL
42-pin
50/44-pin
MSM51V16165D
MSM51V16165DSL
SOJ42-P-400-1
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Abstract: No abstract text available
Text: TVP5160EVM User’s Guide SLEU063 – March 2005 TVP5160EVM User’s Guide Digital Video Department 1 2 3 4 5 6 7 8 9 10 Contents Functional
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TVP5160EVM
SLEU063
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SPT0305
Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SPT0305
BST50
SMD MARKING CODE RAC
HYB3118165
HYB5118165
5118165BSJ-60
5118165BSJ
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SOJ42-P-400-1
Abstract: MSM51V18165DSL
Text: Pr E2G0133-17-61 im el y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V18165D/DSL achieves high integration, high-speed operation,
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E2G0133-17-61
576-Word
16-Bit
MSM51V18165D/DSL
42-pin
50/44-pin
SOJ42-P-400-1
MSM51V18165DSL
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active suspension
Abstract: MSM56V16160F MSM56V16160F-8 TSOPII50-P-400-0
Text: This version : Sep.1999 Semiconductor MSM56V16160F 2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL
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MSM56V16160F
MSM56V16160F
288-word
16bit
cycles/64
active suspension
MSM56V16160F-8
TSOPII50-P-400-0
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MSM51V18160F
Abstract: SOJ42-P-400-1
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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SOJ42
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0053-17-41
MSM5116165B
MSM5116165B
576-Word
16-Bit
MSM5116165BCMOS1
42CMOS
42SOJ50/44TSOP
09664ms
42400milSOJ
SOJ42
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MSM5118160B
Abstract: SOJ42-P-400-1
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM5118160B
TSOPII50/44-P-400-0
MSM5118160B
SOJ42-P-400-1
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Untitled
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0143-18-11
MD51V64160
MD51V64160
304-Word
16-Bit
MD51V64160CMOS4
42CMOS
50SOJ50TSOP
19264ms
09664ms
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MSM5116165DSL
Abstract: SOJ42-P-400-1 msm5116165d
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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Untitled
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FJDD51V65165J-02
MD51V65165J
304-Word
16-Bit
MD51V65165J
/64ms
TSOPII50-P-400-0
80-1K
MD51V65165J-xxTA
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MSM56V16160J
Abstract: No abstract text available
Text: FEDD56V16160J-07 OKI Semiconductor MSM56V16160J Issue Date: Oct. 26, 2005 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160J is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.
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MSM56V16160J
288-Word
16-Bit
FEDD56V16160J-07
MSM56V16160J
cycles/64
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Untitled
Abstract: No abstract text available
Text: PEDD51V18160F-01 1Semiconductor MSM51V18160F This version: May. 2000 Previous version : Preliminary 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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PEDD51V18160F-01
MSM51V18160F
576-Word
16-Bit
MSM51V18160F
42-pin
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Untitled
Abstract: No abstract text available
Text: TSOPII50/44-P-400-0.80E 50 40 Unit : mm 36 26
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TSOPII50/44-P-400-0
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SIEMENS BST
Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Text: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature
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16-Bit
3164165AT
3165165AT
3166165AT
fiE3Sb05
A712S
SIEMENS BST
siemens 230 96
SIEMENS BST P
smd 42t
MAS 10 RCD
SIEMENS BST h 05 60
SIEMENS BST g 02 60
HPC16
SIEMENS BST N 35
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MSM51V18165BSL
Abstract: S0j42-P-400-127 msm51v18165b
Text: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and
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E2G0087-17-41
MSM51V18165B/BSL_
576-Word
16-Bit
TheMSM51
V18165B/BSL
MSM51V18165B/BSL
MSM51V18165BSL
S0j42-P-400-127
msm51v18165b
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MSM5118165B
Abstract: TSOP 86 Package
Text: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power
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E2G0055-17-41
MSM5118165B_
576-Word
16-Bit
TheMSM5118165B
MSM5118165B
42-pin
TSOP 86 Package
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TC59S16
Abstract: TC59S1616A
Text: TO S H IB A TENTATIVE TC59S16 1 6 A F T -8.-10 .-12 A .-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD x 2 BANK x 16-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S1616AFT is CMOS synchronous dynamic random access memory devices, organized as 524,
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TC59S16
288-WORD
16-BIT
TC59S1616AFT
TSOPII50
35MAX
TC59S1616A
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SEM t11
Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command
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HYB39S1640x/80x/16xAT-8/-10
16MBit
P-TSOPI-44
400mil
SEM t11
39S16800
39S16800AT-8
Q1323
q1333
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