SOJ42
Abstract: SOJ42-P-400-1
Text: SOJ42-P-400-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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SOJ42-P-400-1
SOJ42
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FR4 substrate
Abstract: FR4 SUBSTRATE SHEET PL-SOJ42A-M-01 FR-4-G10
Text: 0.650" 0.050" 0.050" 0.050" 1.200" 0.200" 0.018"±0.001" dia. typ. 0.225" 0.269" 0.425" Substrate: FR4/G10, 0.0625"±0.007" thick. Pins: Brass Alloy 360, 1/2H ; finish: 10µ" Gold over 100/150µ" Nickel PL-SOJ42A-M-01 Dwg 1997 IRONWOOD ELECTRONICS, INC.
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FR4/G10,
PL-SOJ42A-M-01
PL-SOJ42A-M-01
FR4 substrate
FR4 SUBSTRATE SHEET
FR-4-G10
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SOJ42-P-400-1
Abstract: SOJ42-P-400 SOJ42
Text: 42P0K Plastic 42pin 400mil SOJ Weight g Lead Material Alloy 42 e b2 D 42 e1 c I2 JEDEC Code – I1 EIAJ Package Code SOJ42-P-400-1.27 22 e1 HE E Recommended Mount Pad Symbol 1 21 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters
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42P0K
42pin
400mil
SOJ42-P-400-1
SOJ42-P-400
SOJ42
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SOJ42-P
Abstract: No abstract text available
Text: SOJ42-P-400-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.86 TYP. 5 版/96.12.5
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SOJ42-P-400-1
SOJ42-P
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SOJ42-P-400-1
Abstract: No abstract text available
Text: SOJ42-P-400-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.86 TYP. 5/Dec. 5, 1996
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SOJ42-P-400-1
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SOJ42-P-400-1
Abstract: No abstract text available
Text: 42P0N-A EIAJ Package Code SOJ42-P-400-1.27 Plastic 42pin 400mil SOJ LOC JEDEC Code – Weight(g) Lead Material Alloy 42 e D e1 I1 I2 c 42 e1 HE E 22 Recommended Mount Pad Symbol 1 21 L A A1 b1 e y b2 b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters
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42P0N-A
SOJ42-P-400-1
42pin
400mil
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sdc 603
Abstract: SDC-602 plcc 52 SOCKET sdc603 MX-500P-21 sdc 606 sdc606 STTC-136 132 qfp extraction tool METCAL SP200
Text: soldering desoldering & rework systems contents and preface Contents 1 Introducing the QX2 2 QX2 system elements and functions 3 QX2 system elements and functions 4 Part numbers for the QX2 5 The power of SmartHeat 6 The power of SmartHeat 7 MX rework systems
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MSM51V16165D
Abstract: MSM51V16165DSL SOJ42-P-400-1
Text: Pr E2G0132-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16165D/DSL achieves high integration, high-speed operation,
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E2G0132-17-61
576-Word
16-Bit
MSM51V16165D/DSL
42-pin
50/44-pin
MSM51V16165D
MSM51V16165DSL
SOJ42-P-400-1
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SPT0305
Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SPT0305
BST50
SMD MARKING CODE RAC
HYB3118165
HYB5118165
5118165BSJ-60
5118165BSJ
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SOJ42-P-400-1
Abstract: MSM51V18165DSL
Text: Pr E2G0133-17-61 im el y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V18165D/DSL achieves high integration, high-speed operation,
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E2G0133-17-61
576-Word
16-Bit
MSM51V18165D/DSL
42-pin
50/44-pin
SOJ42-P-400-1
MSM51V18165DSL
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MSM51V18160F
Abstract: SOJ42-P-400-1
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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SOJ42
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0053-17-41
MSM5116165B
MSM5116165B
576-Word
16-Bit
MSM5116165BCMOS1
42CMOS
42SOJ50/44TSOP
09664ms
42400milSOJ
SOJ42
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MSM5118160B
Abstract: SOJ42-P-400-1
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM5118160B
TSOPII50/44-P-400-0
MSM5118160B
SOJ42-P-400-1
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MSM5116165DSL
Abstract: SOJ42-P-400-1 msm5116165d
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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tc5118180
Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Text: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit
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TC511818
QAJ/AFT-70/80
TC5118180AJ/FT
TC5118180AJ/AFT
TC5118180AJ/AFT-70/80
tc5118180
TC5118180AJ
TC5118180A
A495
A509
TC5118
TOSHIBA TSOP50-P-400
toshiba A500
A498
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TC5118160CJ
Abstract: tc5118160 TC5118160c
Text: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced
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OCR Scan
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TC5118160CJ/CFT-50
576-WORD
16-BIT
TC5118160CJ/CFT
42-pin
50-pin
TC5118160CJ
tc5118160
TC5118160c
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SOJ42
Abstract: No abstract text available
Text: SIEMENS HYM 321005S/GS-50/-60 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version Advanced Information * SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications * Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)
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32-Bit
321005S/GS-50/-60
321005S/GS-50/-60
SOJ42
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Untitled
Abstract: No abstract text available
Text: SIE M EN S 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50
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OCR Scan
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16-Bit
5118160BSJ-50/-60
3118160BSJ-50/-60
HYB5118160
HYB3118160
3118160BSJ-50/-60
GPX05958
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PDF
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MSM5116160
Abstract: dq8e N4409
Text: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er
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OCR Scan
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MSM5116160
576-Word
16-Bit
MSM5116160
42-pin
50/44-pin
dq8e
N4409
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PDF
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TC5116160
Abstract: A461
Text: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit
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TC5116160AI/AFT-60/70/80
TC5116160AJ/AFT
TC51161610AJ/AFT-60/70/80
A8R--A11R
TC5U6160AJ/AFT-60/70/80
TC5116160
A461
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5118160
Abstract: No abstract text available
Text: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)
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16-Bit
5118160BSJ-50/-60/-70
W77//77/7/7,
///////////777A
235b05
0071SSb
5118160
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5118160
Abstract: AG71S 0071547 d0715 Q67100-Q1072 Q67100-Q1073 Q67100-Q1074
Text: SIEM ENS Olk -R e fiih DynamiC RAM HYB 5118160b s j -50/-60/-70 Advanced Inform ation 1 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle tim e RAS access time: 50 ns -50 version) 60 ns (-60 version) 70 ns (-70 version)
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5118160BSJ-50/-60/-70
16-bit
77/V///Ã
f77/////////,
235b05
DD71SSb
5118160
AG71S
0071547
d0715
Q67100-Q1072
Q67100-Q1073
Q67100-Q1074
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Untitled
Abstract: No abstract text available
Text: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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m--------------24Ã
TC5118180BJ/BFT-60/70
5118180BJ/B
5118180BJ/BFT
QDBBH12
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TC5118165
Abstract: TC5118165BFT
Text: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M
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TC5118165BJ/BFT
TC511
SOJ42
TC5118165BJ-32
TC5118165
35MAX
TC5118165BFT
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