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    TC59S16 Search Results

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    TC59S16 Price and Stock

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC59S1604AFT10 1,057
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    Bristol Electronics TC59S1616AFT-10 75 2
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    • 10 $2.688
    • 100 $1.344
    • 1000 $1.344
    • 10000 $1.344
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    TC59S1616AFT-10 41
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    Quest Components TC59S1616AFT-10 278
    • 1 $4.95
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    • 100 $3.0525
    • 1000 $3.0525
    • 10000 $3.0525
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    TC59S1616AFT-10 60
    • 1 $3.6
    • 10 $2.4
    • 100 $1.8
    • 1000 $1.8
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    TC59S1616AFT-10 44
    • 1 $6
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    TC59S1616AFT-10 11
    • 1 $6
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    TC59S1616AFT-10 3
    • 1 $5.9673
    • 10 $4.9728
    • 100 $4.9728
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    Toshiba America Electronic Components TC59S1616AFT-8

    SYNCHRONOUS DRAM, 1MX16, 7.5NS, CMOS, PDSO50
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    Quest Components TC59S1616AFT-8 160
    • 1 $9
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    TC59S1616AFT-8 48
    • 1 $9
    • 10 $4.5
    • 100 $3.9
    • 1000 $3.9
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    Toshiba America Electronic Components TC59S1608AFT-10

    IC,SDRAM,2X1MX8,CMOS,TSOP,44PIN,PLASTIC
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    Quest Components TC59S1608AFT-10 89
    • 1 $6
    • 10 $3
    • 100 $2.6
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    Toshiba America Electronic Components TC59S1616AFT10

    524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC59S1616AFT10 21
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    TC59S16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC59S1616AFT

    Abstract: TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 tc59s1608aft TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT
    Text: TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits and


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    TC59S1616AFT-10, TC59S1608AFT-10, TC59S1604AFT-10, TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 100M-words TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT PDF

    Untitled

    Abstract: No abstract text available
    Text: TC59S1608FT-12 1/2 IL11 * C-MOS 16 M (1,048,576x8x2)-BIT SYNCHRONOUS DYNAMIC RAM - TOP VIEW 17 1 VDD (+3.3 V) GND 44 DQ0 I/O 2 27 GNDQ 42 DQ1 I/O 4 26 25 41 DQ6 I/O VDDQ VDDQ (+3.3 V) (+3.3 V) DQ2 I/O 6 24 40 21 20 39 DQ5 I/O 7 GNDQ 19 GNDQ 38 DQ3 I/O 8


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    TC59S1608FT-12 576x8x2 2048x512x8 PDF

    tc59s1608

    Abstract: No abstract text available
    Text: TOSHIBA TC59S1608FT-10/12 TC59S1604FT-10/12 1,048,576 WORD X 2 BANK X 8 BIT /2,097,152 WORD X 2 BANK X 4 BIT SYNCHRONOUS DRAM Description TC59S1608FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x2-banks x8-bits and TC59S1604FT organized as 2,097,152 words x2-banks x4-bits. Fully synchronous operations are referenced at the positive edges of


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    TC59S1608FT-10/12 TC59S1604FT-10/12 TC59S1608FT 576-words TC59S1604FT TC59S1608FT, tc59s1608 PDF

    samsung 42" plasma tv power supply diagrams

    Abstract: samsung plasma tv circuit diagram Genesis microchip dat samsung plasma 51 LCD tv display pinout diagram MICRONAS MARKING STYLE C2002-DAT-01D marking Microchip GMVLX1A-X VPX32 vlx1a
    Text: DATA SHEET gmVLX1A-X C2002-DAT-01D April 2000 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 www.genesis-microchip.com / info@genesis-microchip.com


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    C2002-DAT-01D DAT-0002 DAT-2002 160-pin 28x28 samsung 42" plasma tv power supply diagrams samsung plasma tv circuit diagram Genesis microchip dat samsung plasma 51 LCD tv display pinout diagram MICRONAS MARKING STYLE C2002-DAT-01D marking Microchip GMVLX1A-X VPX32 vlx1a PDF

    toshiba a10 motherboard

    Abstract: P16R8 TC59S1608AFT-10 Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 MOTOROLA LSC
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


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    P54C-100/66 toshiba a10 motherboard P16R8 TC59S1608AFT-10 Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 MOTOROLA LSC PDF

    epoch T13

    Abstract: epoch t14 Music Semiconductors ternary Ternary CAM "routing tables"
    Text: Preliminary Data Sheet Epoch™ MultiLayer Switch Chipset APPLICATIONS Ø WAN edge routers Ø RAS platforms Ø DSLAMs Ø MultiService platforms Ø Group Switch/Router Ø LAN PBX core FEATURES & BENEFITS Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø Ø MultiMedia-ready integrated switch on a chip


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    PDF

    KM4132G512Q-10

    Abstract: plasma tv BLOCK diagram samsung KM4132G512Q hitachi plasma tv diagram hitachi plasma electronic diagram up C2002 C2002 km4132g512 samsung tv plasma SAA7112
    Text: Product Brief gmVLX1A-X C2002-PBR-01H Description Features The Genesis Microchip gmVLX1A-X is a low-cost, highly integrated IC for progressive television, DVD and Home Theater applications. This feature-packed chip offers Genesis state-of-the-art Vertical/Temporal


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    C2002-PBR-01H 160-Pin KM4132G512Q-10 plasma tv BLOCK diagram samsung KM4132G512Q hitachi plasma tv diagram hitachi plasma electronic diagram up C2002 C2002 km4132g512 samsung tv plasma SAA7112 PDF

    schematic diagram pc vga to tv rca converter

    Abstract: schematic diagram scart to vga Samsung tv remote control circuit diagram zoom 505 schematic Encoder CONTROLLERS SCHEMATIC TMC2366 schematic diagram crt tv samsung KM416S1120A-G 17.734475 crystal KM416S1120A
    Text: www.fairchildsemi.com TMC2376 PC-to-TV Video Standards Converter Description A range of VGA formats/refresh rates can be converted to NTSC and PAL standards compliant with SMPTE-170M and CCIR-624 standards. Within the TMC2376 are capture and encoder engines separated by the frame buffer


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    TMC2376 SMPTE-170M CCIR-624 TMC2376 YUV422 DS30002376 schematic diagram pc vga to tv rca converter schematic diagram scart to vga Samsung tv remote control circuit diagram zoom 505 schematic Encoder CONTROLLERS SCHEMATIC TMC2366 schematic diagram crt tv samsung KM416S1120A-G 17.734475 crystal KM416S1120A PDF

    am29f010b-70ef

    Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
    Text: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI


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    PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 am29f010b-70ef A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference PDF

    toshiba a10 motherboard

    Abstract: MOTOROLA LSC LSC motorola tc59s1608aft Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 P16R8 TC59S1608AFT-10
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


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    P54C-100/66 toshiba a10 motherboard MOTOROLA LSC LSC motorola tc59s1608aft Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 P16R8 TC59S1608AFT-10 PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


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    CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    TC59S1616AFT-10

    Abstract: TC59S1616 BA course 8026 transistor motorola motorola 8026 MCF5307 TC59S1616AFT TC59S1616AFT-1 TC59S1616AFT10
    Text: 12/1999 REV. 1.2 FAE Training 1999 SDRAM Worksheet SDRAM Programming The following worksheet contains examples of and answers to interfacing standard SDRAMs to the MCF5307. By going through the examples and reviewing the correct answers, an understanding of the


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    MCF5307. MCF5307 32-bit Table20 TC59S1616AFT-10 TC59S1616 BA course 8026 transistor motorola motorola 8026 TC59S1616AFT TC59S1616AFT-1 TC59S1616AFT10 PDF

    Untitled

    Abstract: No abstract text available
    Text: •^□^7240 Q02SGÜS 41G « T O S E TOSHIBA TOSHIBA LOGIC/MEMORY TC59S1604 TC59S1608 b^E » t a r g e t s il ic o n g a t e c m o s s p e c 2,097,152 BY 8 BIT SYNCHRONOUS DRAM DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM (SDRAM) using a single 3.3Part -volt


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    Q02SGÃ TC59S1604 TC59S1608 TC59S1604/1608 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC59S1604 TC59S1608 SILICON GATE c m o s 2,097,152 BY 8 BIT SYNCHRONOUS DRAM t a r g e t s p e c DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM SDRAM using a single 3.3Part -volt pow er supply. Various operational m odes can be initiated by controlling the state o f the RAS, CAS, W E. CS.


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    TC59S1604 TC59S1608 TC59S1604/1608 TC59S1608FT/TR-12 PDF

    TC59S1604

    Abstract: TC59S1608
    Text: TOSHIBA TC59S1604 TC59S1608 SILICON GATE c m o s 2,097,152 BY 8 BIT SYNCHRONOUS DRAM t a r g e t DESCRIPTION The T C 59S 1604/1608 is a JEDEC-standard synchronous DRAM SDRAM using a single 3.3Part -volt pow er supply. Various operational m odes can be initiated by controlling the state o f the RAS, CAS, W E, CS,


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    TC59S1604 TC59S1608 TC59S1608 TC59S1604, PDF

    TC59S1608AFT-10

    Abstract: TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616
    Text: ! TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits


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    TC59S1616AFT-10, TC59S1608AFT-10, TC59S1604AFT-10, TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 10OM-words TC59S1608AFT-10 TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616 PDF

    TC59S1616

    Abstract: TC59S1616AFT TC59S1608AF
    Text: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM


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    TC59S1616AFT-8 TC59S1608AFT-8 TC59S1604AFT-8 288-WORD 16-BIT 576-WORDx2 TC59S1616AFT, TC59S1608AFT TC59S1604AFT TC59S1616 TC59S1616AFT TC59S1608AF PDF

    THMY642051AEG10

    Abstract: MY642051 14V aeg aeg t 133
    Text: TOSHIBA THMY642051 AEG-10,-12A,-12 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 2,097,152 W O RD Sx 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY642051AEG is a 2,097,152 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S1608AFT on the printed circuit board.


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    THMY642051 AEG-10 THMY642051AEG TC59S1608AFT 484mW -10/12A) 208mW 80MAX. THMY642051AEG10 MY642051 14V aeg aeg t 133 PDF

    THMY6420B1AEG

    Abstract: aeg tt THMY6420B1AEG10
    Text: TOSHIBA TH MY6420B1 AEG-10,-12A,-12 TENTATIVE .TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 2,097,152 W O RD Sx 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6420B1AEG is a 2,097,152 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S1608AFT on the printed circuit board.


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    MY6420B1 AEG-10 THMY6420B1AEG TC59S1608AFT 484mW -10/12A) 208mW THMY6420B1AEG-10 THMY6420B1AEG H1111111h1111in aeg tt THMY6420B1AEG10 PDF

    THMY644041AEG10

    Abstract: 99 0609 00 04 THMY644041AEG THMY644041 aeg t 133 aeg tt
    Text: TOSHIBA TH M Y644041A EG -10,-12A.-12 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304 W O R D S x 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644041AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled 16 pcs of TC59S1608AFT with Unbuffer on the printed circuit board.


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    Y644041A THMY644041AEG TC59S1608AFT 100ns 120ns THMY644041AEG 54MIN. 25MAX. THMY644041AEG10 99 0609 00 04 THMY644041 aeg t 133 aeg tt PDF

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


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    256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference PDF

    TC59R1809

    Abstract: No abstract text available
    Text: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK


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    18MBit TC59R0409VK TC59R1809VK TC85RT000VK SVP32 SVP42 TC59S1604FT/FTL-10 TC59S1604FT/FTL-12 C59S1608FT/FTL-10 TC59S1608FT/FTL-12 TC59R1809 PDF

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsemi.com S E M I C O N D U C T O R tm TMC2366 PC-to-TV Video Standards Converter Description Features • Frame rate Conversion • Frame-store memory controller • Accepts 640x480,800x600, 1024x768 V G A , Mac • Multiple output standards: N TSC , N TSC -E IA ,


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    TMC2366 640x480 800x600, 1024x768 DS30002366 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM


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    TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 100M-words SD16010496 TC59S1616AFT, TC59S1608AFT, PDF