Untitled
Abstract: No abstract text available
Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-94044A
IRF5801
AN1001)
IRF5801TRPBF
18-Sep-2009
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Untitled
Abstract: No abstract text available
Text: WTM8205 Dual N-Channel Enhancement Mode MOSFET 2 DRAIN P b Lead Pb -Free DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE 4 GATE Features: 1 SOURCE * Super High Density Cell Design for Extremely Low R DS(ON) * Exceptional On-Resistance and Maximum DC Current Capability
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WTM8205
07-Feb-2014
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Untitled
Abstract: No abstract text available
Text: PD - 97729 IRLTS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V D 1 6 32 mΩ D 2 5 D 55 mΩ G 3 4 S 12 nC -6.9 A RDS on max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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IRLTS2242PbF
IRLTS2242TRPbF
D-020D
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Untitled
Abstract: No abstract text available
Text: Si3474DV Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A)a 0.126 at VGS = 10 V 3.8 0.147 at VGS = 6 V 3.5 0.189 at VGS = 4.5 V 3.1 Qg (Typ.) 2.9 nC APPLICATIONS • DC/DC Converters / Boost Converters
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Si3474DV
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AN1001
Abstract: IRF5801 TSOP 48 thermal resistance junction to case
Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-94044A
IRF5801
AN1001)
10sec.
AN1001
IRF5801
TSOP 48 thermal resistance junction to case
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IRF5800
Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
Text: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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IRF5802
AN1001)
IRF5800
IRF5802
IRF5805
IRF5850
IRF5851
IRF5852
SI3443DV
AN1001
diode MARKING CODE 3J
marking code 46 tsop-6
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AN1001
Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-95474A
IRF5801PbF
AN1001)
10sec.
AN1001
IRF5803
IRF5804
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF AN1001
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TSOP-66
Abstract: TSOP-6 Marking
Text: WIMN10 Surface Mount Switching Multi-Chip Diode Array MULTI-CHIP DIODES 100m AMPERES P b Lead Pb -Free 80 VOLTS Features: * Ultra High Speed Switching * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation
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WIMN10
J-STD-020C
MIL-STD-202,
04-Mar-09
TSOP-66
TSOP-6 Marking
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STN8205
Abstract: TSOP-6 Marking Dual N STN8205D TSOP 6 marking 52 STN82 TSOP-6 MARKING 100
Text: STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN8205D
STN8205D
STN8205
30m-ohm
42m-ohm
STN8205
TSOP-6 Marking
Dual N
TSOP 6 marking 52
STN82
TSOP-6 MARKING 100
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Untitled
Abstract: No abstract text available
Text: KS05V4 Low Capacitance Integrated ESD Protection Array Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TheKS05V4 is designed to protect I/Os being sensitive concerning capacitive load, such as USB2.0,Ethernet, DVI etc. from destruction
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KS05V4
TheKS05V4
KS05V4
19-Aug-2013
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Untitled
Abstract: No abstract text available
Text: KS05V4 Low Capacitance Integrated ESD Protection Array Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TheKS05V4 is designed to protect I/Os being sensitive concerning capacitive load, such as USB2.0,Ethernet, DVI etc. from destruction
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KS05V4
TheKS05V4
KS05V4
25-Oct-2013
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TSOP 54 land pattern
Abstract: AO6405 TSOP-6 Marking land pattern for TSOP 2 86
Text: Aug 2002 AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications.
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AO6405
AO6405
TSOP 54 land pattern
TSOP-6 Marking
land pattern for TSOP 2 86
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AO6408
Abstract: No abstract text available
Text: March 2003 AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6408 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for
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AO6408
AO6408
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DIODE 30V TSOP-6
Abstract: TSOP 48 thermal resistance tsop6 marking 345 AO6402 land pattern tsop 6
Text: Nov 2002 AO6402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6402 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device may be used as a load switch or in PWM applications. VDS (V) = 30V
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AO6402
AO6402
DIODE 30V TSOP-6
TSOP 48 thermal resistance
tsop6 marking 345
land pattern tsop 6
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Untitled
Abstract: No abstract text available
Text: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.133 at VGS = - 10 V - 2.2 0.245 at VGS = - 4.5 V - 1.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3993DV
2002/95/EC
Si3993DV-T1-E3
Si3993DV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si3457-b
Abstract: No abstract text available
Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6
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Si3457BDV
Si3457BDV-T1-E3
Si3457BDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si3457-b
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TSOP 6 marking 52
Abstract: No abstract text available
Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition
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Si3447BDV
2002/95/EC
Si3447BDV-T1-E3
Si3447BDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TSOP 6 marking 52
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Untitled
Abstract: No abstract text available
Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition
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Si3983DV
2002/95/EC
Si3983DV-T1-E3
Si3983DV-T1-Gelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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"Frequency Generators"
Abstract: NB2879A NB2879ASNR2 NB2879ASNR2G
Text: NB2879A Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic Interference EMI at the clock source, allowing system wide reduction of EMI of all clock dependent
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NB2879A
NB2879A
NB2879A/D
"Frequency Generators"
NB2879ASNR2
NB2879ASNR2G
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NB2872A
Abstract: NB2872ASNR2 NB2872ASNR2G
Text: NB2872A Low Power, Reduced EMI Clock Synthesizer The NB2872A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2872A reduces ElectroMagnetic Interference EMI at the clock source, allowing system wide reduction of EMI of all clock dependent
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NB2872A
NB2872A
NB2872A/D
NB2872ASNR2
NB2872ASNR2G
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SI3865DDV
Abstract: IK pressure gauge si3865
Text: New Product Si3865DDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VIN VDS2 (V) 1.5 to 12 RDS(on) () ID (A) 0.054 at VIN = 4.5 V 3.9 0.077 at VIN = 2.5 V 3.2 0.106 at VIN = 1.8 V 2.8 0.165 at VIN = 1.5 V 2.2 DESCRIPTION The Si3865DDV includes a p- and n-channel MOSFET in a
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Si3865DDV
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IK pressure gauge
si3865
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qm3003
Abstract: No abstract text available
Text: MA3003V10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3003V is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA3003V10000000
QM3003V
10ASH
D032610
3000pcs
15000pcs
qm3003
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PBSS4350D
Abstract: PBSS5350D
Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
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PBSS5350D
OT457
SC-74)
PBSS4350D
AEC-Q101
PBSS4350D
PBSS5350D
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IRFTS9342
Abstract: irfts9342tr IRLML9301TR irlml9301trpbf IRFTS9342TRPBF
Text: PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDSS R DS on max Qg(typ.) 30V 13.8m @V GS = 10V
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95211B
IRF7807ZPbF
IRF5800TRPBF
IRF5800TR
12-Jul-2012
IRFTS9342
irfts9342tr
IRLML9301TR
irlml9301trpbf
IRFTS9342TRPBF
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