Untitled
Abstract: No abstract text available
Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-94044A
IRF5801
AN1001)
IRF5801TRPBF
18-Sep-2009
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IRLTS2242
Abstract: PA2AD IRLTS2242TRPBF 45V 10A hexfet dc motor driver mosfet 23 Tsop-6
Text: PD - 97729A IRLTS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V D 1 6 32 m D 2 5 D 55 m G 3 4 S 12 nC -6.9 A RDS on max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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7729A
IRLTS2242PbF
IRLTS2242TRPbF
D-020D
IRLTS2242
PA2AD
IRLTS2242TRPBF
45V 10A hexfet dc motor driver
mosfet 23 Tsop-6
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Untitled
Abstract: No abstract text available
Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 40 mΩ 66 mΩ 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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6411A
IRFTS9342PbF
IRFTS9342TRPbF
D-020D
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IRFTS9342TRPBF
Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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6411A
IRFTS9342PbF
IRFTS9342TRPbF
D-020D
IRFTS9342TRPBF
8342T
IRFTS9342
6342T
TSOP6 Marking Code 17
IRF 840 MOSFET
IRF n 30v
IRF5803
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Untitled
Abstract: No abstract text available
Text: PD - 97729A IRLTS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V D 32 m 55 m 12 nC -6.9 A RDS on max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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7729A
IRLTS2242PbF
IRLTS2242TRPbF
D-020D
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IRF580
Abstract: No abstract text available
Text: PD- 94044 PROVISIONAL IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRF5801
AN1001)
IRF580
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Untitled
Abstract: No abstract text available
Text: WTM8205 Dual N-Channel Enhancement Mode MOSFET 2 DRAIN P b Lead Pb -Free DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE 4 GATE Features: 1 SOURCE * Super High Density Cell Design for Extremely Low R DS(ON) * Exceptional On-Resistance and Maximum DC Current Capability
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WTM8205
07-Feb-2014
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Untitled
Abstract: No abstract text available
Text: PD - 97729 IRLTS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V D 1 6 32 mΩ D 2 5 D 55 mΩ G 3 4 S 12 nC -6.9 A RDS on max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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IRLTS2242PbF
IRLTS2242TRPbF
D-020D
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Untitled
Abstract: No abstract text available
Text: Si3474DV Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A)a 0.126 at VGS = 10 V 3.8 0.147 at VGS = 6 V 3.5 0.189 at VGS = 4.5 V 3.1 Qg (Typ.) 2.9 nC APPLICATIONS • DC/DC Converters / Boost Converters
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Si3474DV
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TSOP-6 .54
Abstract: AN1001 IRF5801
Text: PD-94044 IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-94044
IRF5801
AN1001)
10sec.
TSOP-6 .54
AN1001
IRF5801
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AN1001
Abstract: IRF5801 TSOP 48 thermal resistance junction to case
Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-94044A
IRF5801
AN1001)
10sec.
AN1001
IRF5801
TSOP 48 thermal resistance junction to case
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NCS5002
Abstract: No abstract text available
Text: NCS5002 Product Preview RF Power Detector NCS5002 is a full CMOS detector designed for GSM/DCS/ GPRS/EDGE Power Amplifier Control, and RF measurement applications. This device converts the RF power applied into a DC level. The polynomial detector characteristics provide good accuracy at
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NCS5002
NCS5002
NCS5002/D
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Untitled
Abstract: No abstract text available
Text: PD- 95475B IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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95475B
IRF5802PbF
AN1001)
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IRF5800
Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
Text: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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IRF5802
AN1001)
IRF5800
IRF5802
IRF5805
IRF5850
IRF5851
IRF5852
SI3443DV
AN1001
diode MARKING CODE 3J
marking code 46 tsop-6
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AN1001
Abstract: No abstract text available
Text: PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-95474B
IRF5801PbF
AN1001)
10sec.
AN1001
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AN1001
Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-95474A
IRF5801PbF
AN1001)
10sec.
AN1001
IRF5803
IRF5804
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF AN1001
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AN1001
Abstract: Design 24 v 3 A SMPS
Text: PD- 95475B IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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95475B
IRF5802PbF
AN1001)
AN1001
Design 24 v 3 A SMPS
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Untitled
Abstract: No abstract text available
Text: PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-95474B
IRF5801PbF
AN1001)
10sec.
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TSOP-66
Abstract: TSOP-6 Marking
Text: WIMN10 Surface Mount Switching Multi-Chip Diode Array MULTI-CHIP DIODES 100m AMPERES P b Lead Pb -Free 80 VOLTS Features: * Ultra High Speed Switching * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation
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WIMN10
J-STD-020C
MIL-STD-202,
04-Mar-09
TSOP-66
TSOP-6 Marking
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Untitled
Abstract: No abstract text available
Text: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM6562,
GSM6562TSF
Lane11
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3981, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM3981,
-20V/-3
-20V/-2
-20V/-1
Lane11
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Untitled
Abstract: No abstract text available
Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6405TSF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM6405TSF,
-30V/-5
-30V/-4
Lane11
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STN8205
Abstract: TSOP-6 Marking Dual N STN8205D TSOP 6 marking 52 STN82 TSOP-6 MARKING 100
Text: STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN8205D
STN8205D
STN8205
30m-ohm
42m-ohm
STN8205
TSOP-6 Marking
Dual N
TSOP 6 marking 52
STN82
TSOP-6 MARKING 100
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Untitled
Abstract: No abstract text available
Text: PD - 97728A IRFTS8342PbF RDS on max 19 m 29 m 4.8 nC 8.2 A (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 6 V ' ±20 ' VGS HEXFET Power MOSFET * V ' 30 ' VDS TSOP-6 Applications •System/Load Switch Features and Benefits
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7728A
IRFTS8342PbF
IRFTS8342TRPBF
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