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    SI3983DV Price and Stock

    Vishay Siliconix SI3983DV-T1-E3

    MOSFET 2P-CH 20V 2.1A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3983DV-T1-E3 Cut Tape 1
    • 1 $0.42
    • 10 $0.42
    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
    		Buy Now
    SI3983DV-T1-E3 Digi-Reel 1
    • 1 $0.42
    • 10 $0.42
    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
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    SI3983DV-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.12605
    		Buy Now

    Vishay Siliconix SI3983DV-T1-GE3

    MOSFET 2P-CH 20V 2.1A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3983DV-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.29038
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    SI3983DV Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI3983DV Vishay Siliconix MOSFETs Original PDF
    Si3983DV SPICE Device Model Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF
    Si3983DV-T1-E3 Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI3983DV-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 2.1A 6-TSOP Original PDF
    SI3983DV-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 2.1A 6-TSOP Original PDF

    SI3983DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3983DV

    Abstract: Si3983DV-T1
    Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel


    Original     		PDF Si3983DV Si3983DV-T1--E3 S-40575--Rev. 29-Mar-04 Si3983DV-T1

    40575

    Abstract: Si3983DV Si3983DV-T1
    Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel


    Original     		PDF Si3983DV Si3983DV-T1--E3 08-Apr-05 40575 Si3983DV-T1

    Si3983DV

    Abstract: 72426
    Text: SPICE Device Model Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3983DV netw68 12-Aug-03 72426

    Si3983DV

    Abstract: Si3983DV-T1-E3 Si3983DV-T1-GE3
    Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition


    Original     		PDF Si3983DV 2002/95/EC Si3983DV-T1-E3 Si3983DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition


    Original     		PDF Si3983DV 2002/95/EC Si3983DV-T1-E3 Si3983DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3983DV Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel


    Original     		PDF Si3983DV Si3983DV-T1--E3 S-32412--Rev. 24-Nov-03

    Untitled

    Abstract: No abstract text available
    Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition


    Original     		PDF Si3983DV 2002/95/EC Si3983DV-T1-E3 Si3983DV-T1-GE3 11-Mar-11

    Si3983DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3983DV 18-Jul-08

    Si3983DV

    Abstract: Si3983DV-T1
    Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel


    Original     		PDF Si3983DV Si3983DV-T1--E3 18-Jul-08 Si3983DV-T1

    Untitled

    Abstract: No abstract text available
    Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.110 @ VGS = -4.5 V -2.5 0.145 @ VGS = -2.5 V -2.0 0.220 @ VGS = -1.8 V -1.0 D TrenchFETr Power MOSFETS D Symetrical Dual P-Channel


    Original     		PDF Si3983DV Si3983DV-T1 S-31404--Rev. 14-Jul-03

    Si3983DV

    Abstract: Si3983DV-T1-E3 Si3983DV-T1-GE3
    Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition


    Original     		PDF Si3983DV 2002/95/EC Si3983DV-T1-E3 Si3983DV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition


    Original     		PDF Si3983DV 2002/95/EC Si3983DV-T1-E3 Si3983DV-T1-Gelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN609

    Abstract: Si3983DV
    Text: Si3983DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3983DV AN609 14-Mar-07

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    Untitled

    Abstract: No abstract text available
    Text: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923–MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the


    Original     		PDF MAX4923â MAX4926 MAX4923) MAX4924) MAX4925) MAX4926) MAX4926

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    446V

    Abstract: MAX4923 L611 to control
    Text: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923–MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the


    Original     		PDF MAX4923 MAX4926 MAX4923) MAX4924) MAX4925) MAX4926) MAX4926 446V L611 to control