IRf 334
Abstract: No abstract text available
Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
IRF5804PbF
OT-23.
IRf 334
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95503B IRF5804PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
95503B
IRF5804PbF
|
PDF
|
IRF5804PbF
Abstract: No abstract text available
Text: PD - 95503A IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
5503A
IRF5804PbF
OT-23.
IRF5804PbF
|
PDF
|
IRF5820
Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Text: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
4333A
IRF5804
OT-23.
IRF5820
IRF5800
IRF5804
SI3443DV
IRF5851
IRF5806
irf5852
sot-23 MARKING CODE 3d
|
PDF
|
IRF5820
Abstract: 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d
Text: PD - 94333B IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
94333B
IRF5804
OT-23.
IRF5820
94333
IRF5800
IRF5804
SI3443DV
k 9632
sot-23 MARKING CODE 3d
|
PDF
|
IRF5800
Abstract: IRF5804 IRF5850 SI3443DV
Text: PD - 94333 IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
IRF5804
IRF5800
IRF5804
IRF5850
SI3443DV
|
PDF
|
IRF 511 MOSfet
Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier
|
Original
|
IRF5805PbF
OT-23.
IRF 511 MOSfet
IRF5850
IRF5851
IRF5852
IRF5805PBF
mosfet 23 Tsop-6
|
PDF
|
mosfet p-channel 300v irf
Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier
|
Original
|
PD-95240
Si3443DVPbF
OT-23.
mosfet p-channel 300v irf
P-Channel 200V MOSFET TSOP6
IRF5850
IRF5851
IRF5852
mosfet 23 Tsop-6
PD-95240
p-channel 250V 30A power mosfet
IRF 100A 500V
|
PDF
|
IRF5820
Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier
|
Original
|
3997A
IRF5806
OT-23.
space252-7105
IRF5820
IRF5806
IRF5800
SI3443DV
3D marking sot23
sot-23 Marking 3D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier
|
Original
|
-94029A
IRF5805
OT-23.
|
PDF
|
IRF 535
Abstract: IRF 100A IRF 2004 mosfet 23 Tsop-6 irf 30A IRF5800 IRF5850 SI3443DV TSOP6 Marking Code 17
Text: IRF5800PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
|
Original
|
IRF5800PbF
IRF5802
IRF 535
IRF 100A
IRF 2004
mosfet 23 Tsop-6
irf 30A
IRF5800
IRF5850
SI3443DV
TSOP6 Marking Code 17
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -3.0A Description These P-channel MOSFETs from International Rectifier
|
Original
|
3997A
IRF5806
OT-23.
|
PDF
|
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
|
Original
|
100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
|
PDF
|
IRF MOSFET 100A 200v
Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
|
Original
|
IRF5801PbF
10sec.
IRF MOSFET 100A 200v
IRF 100A
IRF n 30v
IRF5851
MOSFET 150 N IRF
IRF5802
IRF5803
IRF5804
IRF5805
IRF5806
|
PDF
|
|
|
IRF Power MOSFET code marking
Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
Text: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier
|
Original
|
IRF5800PbF
OT-23.
IRF Power MOSFET code marking
IRF 535
IRF5800
IRF5850
SI3443DV
IRF MOSFET 10A P
MOSFET IRF 94
|
PDF
|
IRLTS6342TRPBF
Abstract: IRLTS6342 m4570 irlts6342tr irf5850
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
|
Original
|
IRLTS6342PbF
IRLTS6342TRPBF
D-020D
IRLTS6342TRPBF
IRLTS6342
m4570
irlts6342tr
irf5850
|
PDF
|
IRF5820
Abstract: SI3443DV IRF5800 IRF5850
Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
|
Original
|
3947A
IRF5850
IRF5850
OT-23
IRF5820
SI3443DV
IRF5800
|
PDF
|
IRF5800
Abstract: IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
Text: IRF5852PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
|
Original
|
IRF5852PbF
IRF5803
IRF5802
IRF5800
IRF5801
IRF5804
IRF5806
IRF5810
IRF5850
IRF5851
IRF5852
SI3443DV
|
PDF
|
AN1001
Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
|
Original
|
PD-95474A
IRF5801PbF
AN1001)
10sec.
AN1001
IRF5803
IRF5804
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF AN1001
|
PDF
|
IRFTS9342TRPBF
Abstract: No abstract text available
Text: IRF5801PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 V 2.20 Ω 3.9 0.6 D 1 6 D nC D 2 5 D A G 3 4 S TSOP-6 Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
|
Original
|
IRF5801PbF-1
IRF5801TRPbF-1
TD-020D
IRFTS9342TRPBF
|
PDF
|
IRF5850
Abstract: IRF5801 IRF5806 IRF5851 IRF5852 I3443DV IRF5803 MOSFET IRF 5805 IRF 2004
Text: IRF5810PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
|
Original
|
IRF5810PbF
IRF5803
IRF5802
IRF5850
IRF5801
IRF5806
IRF5851
IRF5852
I3443DV
IRF5803
MOSFET IRF 5805
IRF 2004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
|
Original
|
IRLTS6342PbF
IRLTS6342TRPBF
|
PDF
|
IRF5851
Abstract: n-p channel mosfet tsop6 IRF5800 SI3443DV TSOP 66 Package thermal resistance sot-23 MARKING CODE G1 variac
Text: PD-93998B IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced
|
Original
|
PD-93998B
IRF5851
IRF5851
n-p channel mosfet tsop6
IRF5800
SI3443DV
TSOP 66 Package thermal resistance
sot-23 MARKING CODE G1
variac
|
PDF
|
IRF5820
Abstract: IRF5800 IRF5810 SI3443DV IRF5851
Text: PD -94198A IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A Description These P-channel HEXFET® Power MOSFETs from
|
Original
|
-94198A
IRF5810
IRF5820
IRF5800
IRF5810
SI3443DV
IRF5851
|
PDF
|
