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    IRF5801 Search Results

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    IRF5801 Price and Stock

    Infineon Technologies AG IRF5801TRPBF

    MOSFET N-CH 200V 600MA MICRO6
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    DigiKey IRF5801TRPBF Reel 6,000 3,000
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    IRF5801TRPBF Cut Tape 2,606 1
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    IRF5801TRPBF Digi-Reel 1
    • 1 $0.62
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    Avnet Americas IRF5801TRPBF Reel 10 Weeks 3,000
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    Mouser Electronics IRF5801TRPBF 30,860
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    Verical IRF5801TRPBF 23,530 140
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    IRF5801TRPBF 6,000 3,000
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    IRF5801TRPBF 1,487 43
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    Arrow Electronics IRF5801TRPBF 6,000 10 Weeks 3,000
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    IRF5801TRPBF Cut Strips 1,487 10 Weeks 1
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    Bristol Electronics IRF5801TRPBF 151,755
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    Rochester Electronics IRF5801TRPBF 15,000 1
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    TME IRF5801TRPBF 179 1
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    Rutronik IRF5801TRPBF Reel 3,000 3,000
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    Chip1Stop IRF5801TRPBF Cut Tape 23,530
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    New Advantage Corporation IRF5801TRPBF 30,000 1
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    International Rectifier IRF5801TR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF5801TR 2,094
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    • 1000 $0.5922
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    International Rectifier IRF5801TRPBF

    HEXFET SMPS POWER MOSFET Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IRF5801TRPBF 1,980
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    IRF5801 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF5801 International Rectifier HEXFET POWER SMPS MOSFET Original PDF
    IRF5801TR International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
    IRF5801TRPBF International Rectifier Original PDF

    IRF5801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-94044A IRF5801 AN1001) IRF5801TRPBF 18-Sep-2009

    IRF MOSFET 100A 200v

    Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
    Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current


    Original     		PDF IRF5801PbF 10sec. IRF MOSFET 100A 200v IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806

    TSOP-6 .54

    Abstract: AN1001 IRF5801
    Text: PD-94044 IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-94044 IRF5801 AN1001) 10sec. TSOP-6 .54 AN1001 IRF5801

    AN1001

    Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
    Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-95474A IRF5801PbF AN1001) 10sec. AN1001 IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001

    Untitled

    Abstract: No abstract text available
    Text: PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-95474B IRF5801PbF AN1001) 10sec.

    IRFTS9342TRPBF

    Abstract: No abstract text available
    Text: IRF5801PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 V 2.20 Ω 3.9 0.6 D 1 6 D nC D 2 5 D A G 3 4 S TSOP-6 Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free


    Original     		PDF IRF5801PbF-1 IRF5801TRPbF-1 TD-020D IRFTS9342TRPBF

    IRF580

    Abstract: No abstract text available
    Text: PD- 94044 PROVISIONAL IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF IRF5801 AN1001) IRF580

    AN1001

    Abstract: IRF5801 TSOP 48 thermal resistance junction to case
    Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-94044A IRF5801 AN1001) 10sec. AN1001 IRF5801 TSOP 48 thermal resistance junction to case

    AN1001

    Abstract: No abstract text available
    Text: PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-95474B IRF5801PbF AN1001) 10sec. AN1001

    IRF 511 MOSfet

    Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
    Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF IRF5805PbF OT-23. IRF 511 MOSfet IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6

    mosfet p-channel 300v irf

    Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
    Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF PD-95240 Si3443DVPbF OT-23. mosfet p-channel 300v irf P-Channel 200V MOSFET TSOP6 IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V

    IRf 334

    Abstract: No abstract text available
    Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF IRF5804PbF OT-23. IRf 334

    irf MOSFET p-CH

    Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
    Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description


    Original     		PDF PD-95341 IRF5851PbF irf MOSFET p-CH IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRF Power MOSFET code marking

    Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
    Text: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 5476A IRF5806PbF OT-23. IRF Power MOSFET code marking IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 40 mΩ 66 mΩ 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET


    Original     		PDF 6411A IRFTS9342PbF IRFTS9342TRPbF D-020D

    0.5-4A

    Abstract: AN1001 IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
    Text: PD- 95475A IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF 5475A IRF5802PbF AN1001) 0.5-4A AN1001 IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV

    IRFTS9342TRPBF

    Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
    Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET


    Original     		PDF 6411A IRFTS9342PbF IRFTS9342TRPbF D-020D IRFTS9342TRPBF 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803

    IRLTS6342TRPBF

    Abstract: IRLTS6342 m4570 irlts6342tr irf5850
    Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits


    Original     		PDF IRLTS6342PbF IRLTS6342TRPBF D-020D IRLTS6342TRPBF IRLTS6342 m4570 irlts6342tr irf5850

    Untitled

    Abstract: No abstract text available
    Text: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF PD-95262 IRF5803PbF OT-23.

    IRF5800

    Abstract: IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
    Text: IRF5852PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original     		PDF IRF5852PbF IRF5803 IRF5802 IRF5800 IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV

    Light Dimmer 800 watt with Schematic

    Abstract: zero crossing dimmer zigbee Voltech dimmer 2250u busch dimmer 2250u 3 volt dimmer circuit light dimmer working circuit using triac TMK316B7106KL-TD 220 volt dimmer circuit 1210 LED
    Text: User's Guide SLUU523 – July 2011 Using the TPS92070EVM-648 Integrated Dimming LED Lighting Driver Converter for 230 VAC Input The TPS92070EVM-648 evaluation module EVM is a low power isolated flyback converter that provides 5 on-board LEDs with 370 mA of drive current from a nominal 230 VAC input. This EVM is designed to


    Original     		PDF SLUU523 TPS92070EVM-648 TPS92070 Light Dimmer 800 watt with Schematic zero crossing dimmer zigbee Voltech dimmer 2250u busch dimmer 2250u 3 volt dimmer circuit light dimmer working circuit using triac TMK316B7106KL-TD 220 volt dimmer circuit 1210 LED

    Untitled

    Abstract: No abstract text available
    Text: TPS92410EVM-002 Offline LED Driver Evaluation Module User's Guide Literature Number: SLVUA46 May 2014 Contents 1 2 3 Introduction . 4 Warnings and Cautions . 4


    Original     		PDF TPS92410EVM-002 SLVUA46