TSOP 48 pin flash gbit
Abstract: JS28F00AP33BF 1FFC000
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
TSOP 48 pin flash gbit
JS28F00AP33BF
1FFC000
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pc28f00ap33
Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
pc28f00ap33
JS28F00AP33BF
JS28F512P33BF
PC28F00BP33EF
PC28F00BP33
JS28F512P33EF
PC28F512P33
JS28F512P33
PC28F00AP33EF
JS28F512
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FBGA 11x13
Abstract: k8p2716 K8P2716UZC
Text: Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP 20x14mm , 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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K8P2716UZC
128Mb
56Pin
20x14mm)
64ball
11x13,
64-Ball
60Solder
FBGA 11x13
k8p2716
K8P2716UZC
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MSC23S2640E-8BS8
Abstract: No abstract text available
Text: MSC23S2640E-8BS8 98.08.19 Semiconductor MSC23S2640E-8BS8 2,097,152 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK): DESCRIPTION The Oki MSC23S2640E-8BS8 is a fully decoded, 2,097,152 x 64bit synchronous dynamic random access memory composed of eight 16Mb DRAMs (2Mx8) in TSOP
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MSC23S2640E-8BS8
MSC23S2640E-8BS8
64bit
168-pin
64-Bit
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numonyx MLC
Abstract: te28f256p33tf PC28F256P33 JS28F256P33 PC48F4400P0TB0E
Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read
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P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KByte
numonyx MLC
te28f256p33tf
PC28F256P33
JS28F256P33
PC48F4400P0TB0E
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strataflash p33
Abstract: PC28F PC28F256P33 JS28F256P33B
Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read
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P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KByte
strataflash p33
PC28F
PC28F256P33
JS28F256P33B
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SDRAM
Abstract: 128Mx8 DDR dRAM 512M 8M X 16 SDRAM 8M X 16 X 4 SDRAM SDRAM 128M 8M x 16 512M ISSD16M16STC TSOP SDRAM ISAS512K16LTD
Text: MPD Parts Directory March 2002 Stack Technology Stack Memory Configuration Stack Part Number TSOP Memory Configuration SRAM (8M) 512K x 16 ISAS512K16LTD (4M) 256K x 16 EDO DRAM (128M) 16M x 8 ISED16M8LTB (64M) 16M x 4 SDRAM SDRAM SDRAM SDRAM SDRAM (512M)
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ISAS512K16LTD
ISED16M8LTB
ISSD128M4STB
ISSD64M8STB
ISSD64M8STC
ISSD32M16STC
ISSD32M16STD
ISSD64M4STB
ISSD32M8STB
ISSD32M8STC
SDRAM
128Mx8
DDR dRAM 512M
8M X 16 SDRAM
8M X 16 X 4 SDRAM
SDRAM 128M 8M x 16
512M
ISSD16M16STC
TSOP SDRAM
ISAS512K16LTD
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PC28F256P33
Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read
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P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KByte
PC28F256P33
JS28F256P33
PC48F
pc28F256P33T
PC28F256P33B
PC28F256p33bf
PC28F256P33TF
DIODE 61 BP
DIODE BP
truth table NOT gate 74
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S29JL064H
Abstract: S29PL064J
Text: Am29DL640D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factoryrecommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information.
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Am29DL640D
S29JL064H
S29PL064J
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Untitled
Abstract: No abstract text available
Text: 168PIN PC66 Unbuffered DIMM 32MB With 2M X8 CL3 TS4MLS64V1PN Description Placement The TS4MLS64V1PN is a 4M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS4MLS64V1PN consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a
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168PIN
TS4MLS64V1PN
TS4MLS64V1PN
PC-66.
16pcs
400mil
168-pin
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fw209
Abstract: No abstract text available
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)
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128Mb,
x8/x16
128KB
128Mb)
150ns/25ns
120ns/25ns
110ns/25ns
fw209
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AN7254
Abstract: AN7260 ITF87052SVT MO-193AA SC-95 TB370
Text: ITF87052SVT Data Sheet 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET Packaging TSOP-6 4 3 File Number 4800.4 Features • Ultra Low On-Resistance - rDS ON = 0.115Ω, VGS = −4.5V - rDS(ON) = 0.120Ω, VGS = −4.0V - rDS(ON) = 0.190Ω, VGS = −2.5V
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ITF87052SVT
AN7254
AN7260
ITF87052SVT
MO-193AA
SC-95
TB370
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Untitled
Abstract: No abstract text available
Text: Am29DL640G Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640G and is the factory-recommended migration path. Please refer to the S29JL064H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640G and is the
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Am29DL640G
S29JL064H
S29PL064J
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D323GB90VI
Abstract: AM29DL32XD DL324 PAL 0007 E amplificador S29JL032 DL322 DL323 S29JL032H S29PL032J spansion date code marking
Text: Am29DL32xG Data Sheet For new designs involving TSOP packages, S29JL032H supersedes Am29DL32xG and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL032J supersedes Am29DL32xG and is the
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Am29DL32xG
S29JL032H
S29PL032J
D323GB90VI
AM29DL32XD
DL324
PAL 0007 E amplificador
S29JL032
DL322
DL323
spansion date code marking
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PC28F00AP
Abstract: No abstract text available
Text: Numonyx StrataFlash Embedded Memory P33-65nm 512-Mbit, 1-Gbit Monolithic Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode
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P33-65nm)
512-Mbit,
105ns
16-word
52MHz
512-word
46MByte/s
128-KByte
P33-65nm
PC28F00AP
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Micron Q-Flash memory
Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)
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128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
56-Pin
x8/x16
128KB
128Mb)
Micron Q-Flash memory
FW501
Micron data sheet Q-Flash
sample code read and write flash memory
FW201
FW207
MT28F128J3
MT28F128J3FS-15
MT28F320J3
MT28F320J3FS-11
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AMD marking CODE flash AM29DL323DB
Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Text: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.
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Am29DL322D/323D/324D
S29JL032H
Am29DL32xD
S29PL032J
AMD marking CODE flash AM29DL323DB
56-Pin
S29JL032
DL322
DL323
DL324
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amd part marking
Abstract: S29JL064H S29PL064J
Text: Am29DL640D Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640D and is the
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Am29DL640D
S29JL064H
S29PL064J
amd part marking
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JS28F256P30
Abstract: JS28F256P30T JS28F256P30BF PC28F256P3 RC48F4400P0VB0
Text: Numonyx AxcellTM Flash Memory P3065nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP
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P3065nm)
256-Mbit,
512-Mbit
256M/256M)
16-word
256Mb,
512Mb
256Mb
64-ball
PC28F256P30TFE
JS28F256P30
JS28F256P30T
JS28F256P30BF
PC28F256P3
RC48F4400P0VB0
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FW406
Abstract: FW509 FW407 MT28F128J3FS-12 MET MT28F640J3RG-12 MT28F128J3RG-15ET flash fw206 FW206 MT28F128J3RG-15 FW510
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY TM MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)
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128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
x8/x16
128KB
128Mb)
150ns/25ns
FW406
FW509
FW407
MT28F128J3FS-12 MET
MT28F640J3RG-12
MT28F128J3RG-15ET
flash fw206
FW206
MT28F128J3RG-15
FW510
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Untitled
Abstract: No abstract text available
Text: HYM7V651601BTFG 16Mx64, 8Mx8 based, PC100 DESCRIPTION The Hynix HYM7V651601B F-Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-il package, one 2Kbit EEPROM in 8pin TSSOP
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HYM7V651601BTFG
16Mx64,
PC100
HYM7V651601B
16Mx64bits
400mil
54pin
168pin
128Mbytes
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Untitled
Abstract: No abstract text available
Text: HYM7V63401BTRG 4Mx64, 4Mx16 based, PC133 DESCRIPTION The Hynix HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package
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HYM7V63401BTRG
4Mx64,
4Mx16
PC133
HYM7V63401B
4Mx64bits
4Mx16bit
400mil
54pin
168pin
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HYM7V65401
Abstract: No abstract text available
Text: HYM7V65401B L TQG 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs In 400mll 54pln TSOP-II package and 2Kbit EEPROM in 8pln TSSOP package
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HYM7V65401B
4Mx64,
4Mx16
PC100
4Mx64bits
4Mx16bit
400mll
54pln
144pin
HYM7V65401
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YM71
Abstract: No abstract text available
Text: HYM71V16655AT6 16Mx64, 8Mx16 based, PC100 DESCRIPTION The Hynix HYM71V16655AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits CMOS Synchronous DRAMs In 400mil 54pln TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin glass-epoxy
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HYM71V16655AT6
16Mx64,
8Mx16
PC100
HYM71V16655AT6
16Mx64bits
8Mx16bits
400mil
54pln
168pin
YM71
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