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    Untitled

    Abstract: No abstract text available
    Text: HYM7V75A801BTFG 8Mx72, 8Mx8 based, PC100 DESCRIPTION The Hynix HYM7V75A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bit CMOS Synchronous DRAMs in 400mll 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP


    OCR Scan     		PDF HYM7V75A801BTFG 8Mx72, PC100 HYM7V75A801B 8Mx72bits 400mll 54pin 168pin 64Mbytes

    HYM7V65401

    Abstract: No abstract text available
    Text: HYM7V65401B L TQG 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs In 400mll 54pln TSOP-II package and 2Kbit EEPROM in 8pln TSSOP package


    OCR Scan     		PDF HYM7V65401B 4Mx64, 4Mx16 PC100 4Mx64bits 4Mx16bit 400mll 54pln 144pin HYM7V65401

    4N500

    Abstract: IC 741 cn
    Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N


    OCR Scan     		PDF b427555 GG42530 uPD42S16190 uPD42S17190 uPD42S18190 475mil) P32VF-100-475A P32VF-100-475A 4N500 IC 741 cn

    M37705E4BSP

    Abstract: M37705M4B M37705E4B
    Text: MITSUBISHI MICROCOMPUTERS M 37705E4BXXXSP PROM VERSION of M37705M 4BXXXSP DESCRIPTION The M37705E4BXXXSP is a sin g le -c h ip m icro com p uter d e ­ PIN CONFIGURATION TOP VIEW signe d w ith high -pe rform an ce C M O S silicon gate tech nolo­ gy. This is housed in a 64-pin shrink plastic m o ld ed DIP.


    OCR Scan     		PDF 37705E4BXXXSP M37705M M37705E4BXXXSP M37705M4BXXXSP 16K-byte 64-pin 25mVrms, M37705E4BSP M37705M4B M37705E4B

    Untitled

    Abstract: No abstract text available
    Text: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by


    OCR Scan     		PDF HM51441OB/BL 576-word 20pin 20-pin HM514410BS/BLS-7 HM51441OBS/BLS-8 300-mil 20-pin CP-20D) HM514410BHM514410B/BL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55BS8125J-10/12 PRELIMINARY 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM with Input Registers and Output Registers Description The TC55BS8125J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and organized as 131,072 w ords by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and


    OCR Scan     		PDF TC55BS8125J-10/12 TC55BS8125J TC55BS8128J TDT724fi

    Untitled

    Abstract: No abstract text available
    Text: IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64Mb Synchronous DRAM - Die Revision A r.-swreœsawwmiTO-; Features Programmable Wrap Sequence: Sequential or Interleave • High Performance: Multiple Burst Read with Single Write Option -360, j -365. Ci =3 ; CL=3


    OCR Scan     		PDF IBM0364404C IBM0364164C IBM0364804C IBM03644B4C

    SEM t11

    Abstract: 39S16800 39S16800AT-8 Q1323 q1333
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command


    OCR Scan     		PDF HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil SEM t11 39S16800 39S16800AT-8 Q1323 q1333

    Untitled

    Abstract: No abstract text available
    Text: IBM0316409C IBM0316809C IBM0316169C 16M b S yn c h ro n o u s D RAM Features • High Performance: I • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command I cl% j C L ^ S i Units j 100 83 ! MHz ; • Data Mask for Read/W rite control x4,x8


    OCR Scan     		PDF IBM0316409C IBM0316809C IBM0316169C cycles/64ms 07H3997 0003Sb0

    658512

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)


    OCR Scan     		PDF KM658512/L/L-L 120ns 210ns 200mW Cycles/32ms itiA/200 KM658512L-L 32-Pin 600mil) 525mll) 658512

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 100494 FEATURES: DESCRIPTION: • 16,384-w ords x 4 -b it o rg a n iza tio n • A ddress a ccess tim e : 8 /1 0 /1 5n s (max.) • Low p o w e r d issip a tio n : 500m W (typ.) T h e ID T100494 is a 65,536-bit h ig h -sp ee d BiC E M O S ECL


    OCR Scan     		PDF 384-w T100494 536-bit 400mll) 350mll) S12-30

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC blE D • L427S2S D0344[]fl Sib ■ NECE MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configuration The M C-424000A36 is a fast-page dynam ic RAM mod­ ule organized as 4,194,304 words by 36 bits and de­


    OCR Scan     		PDF L427S2S D0344[ MC-424000A36 36-Bit C-424000A36 72-Pin HPD4217400LE 400-mll HPD424100LA 300-mil

    Circuit integrated 8002

    Abstract: S1216 static ram 64K pt dsc sec
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 10494 FEATURES: DESCRIPTION: • 16,384-words x 4-bit organization • Address access time: 8/10 /1 5 ns (max.) • Low power dissipation: 600m W (typ.) • Fully compatible with ECL logic levels


    OCR Scan     		PDF 384-words T10494 536-bit ECL-10K S12-19 IDT104 C28-2 400mll) S12-20 Circuit integrated 8002 S1216 static ram 64K pt dsc sec

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002J-10 200mA KM68B4002J-12 195mA KM68B4002J-15 190mA KM68B4002J 36-SOJ-4QO KM68B4002

    trw 1014

    Abstract: No abstract text available
    Text: IBM0118160 IBM0118160M IBM0118160B IBM0118160P 1 M x 16 10/10 DRAM Features • Low Power Dissipation - Active max - 1 8 5 mA /1 6 0 mA /1 4 0 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version)


    OCR Scan     		PDF IBM0118160 IBM0118160M IBM0118160B IBM0118160P 200nA 110ns trw 1014

    Untitled

    Abstract: No abstract text available
    Text: IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0 .5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0117800 IBM0117800M IBM0117800B IBM0117800P 300nA 110ns 130ns 256ms 128ms, 43G9629

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P 110ns 200nA 300nA SA14-4203-04

    374S203BTN

    Abstract: No abstract text available
    Text: KMM374S203BTN NEW JEDEC SDRAM MODULE KMM374S203BTN SDRAM DIMM 2Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S203BTN is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM374S203BTN KMM374S203BTN 2Mx72 400mll 168-pin 374S203BTN

    fr9z

    Abstract: VG264260
    Text: VG264260CJ 262.144x16—Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in


    OCR Scan     		PDF VG264260CJ 144x16-- 144-word 40-pin 25/28/30/35/40ns 0s035 fr9z VG264260

    IT2205

    Abstract: IBM0316809CT3-10 g618ac
    Text: IBM0316409CIBM0316809C IBM0316169C 16Mbit S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91


    OCR Scan     		PDF IBM0316409CIBM0316809C IBM0316169C 16Mbit cycles/64ms IBM0316809C IBM0316409C 400mil; IT2205 IBM0316809CT3-10 g618ac

    sa3c

    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT WITH CONDITIONAL WRITE ADVANCE INFORMATION IDT 10508 IDT 100508 FEATURES: DESCRIPTION: • 65,535-words x 4-bit organization The IDT10508 and IDT100508 are 262,144-bit high-speed B iC E M O S E C L static random acce ss memories organized as


    OCR Scan     		PDF 535-words 12/15ns 800mW IDT10508 IDT100508 144-bit ECL-100K, T100498 400mll) sa3c

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		PDF 256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN

    Untitled

    Abstract: No abstract text available
    Text: -H Y U N D A I - • H Y 57V 054O1OA 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010A is a 67,108,864-bit C M O S Synchronous D RA M , ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010A is organized a s 2banks of


    OCR Scan     		PDF 57V654010A 864-bit HY57V654010A 608x4. HY57V65401 400mil 54pin 2J27I8J7K 150fg 1SE34-

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 512 K x 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time:


    OCR Scan     		PDF 514800BJ-60/-70/-80 514800BJL-60/-70/-80 514800BJ/BJL-60/-70/-80