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    Catalog Datasheet MFG & Type Document Tags PDF

    FBGA 11x13

    Abstract: k8p2716 K8P2716UZC
    Text: Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP 20x14mm , 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    K8P2716UZC 128Mb 56Pin 20x14mm) 64ball 11x13, 64-Ball 60Solder FBGA 11x13 k8p2716 K8P2716UZC PDF

    SONY msl 9351

    Abstract: TSB12LV23 tsb41ab1 g4
    Text: TSB41AB1 IEEE 1394aĆ2000 ONEĆPORT CABLE TRANSCEIVER/ARBITER SLLS423I − JUNE 2000 − REVISED MARCH 2005 D Fully Supports Provisions of IEEE D D D D D D D D 1394-1995 Standard for High Performance Serial Bus† and IEEE 1394a-2000 Fully Interoperable With FireWire and


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    TSB41AB1 1394a2000 SLLS423I 1394a-2000 sllz012 SONY msl 9351 TSB12LV23 tsb41ab1 g4 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.6, OCT. 30, 2013 1 MX29GL512F Contents FEATURES. 5


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    MX29GL512F PM1617 PDF

    TE28F640J3C-120

    Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


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    28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)


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    S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R PDF

    RGC 55

    Abstract: SLAU208 SLAS590E MSP430 MSP430F5528 SLAU278 RGC55 ADC12SHSx
    Text: MSP430F551x MSP430F552x SLAS590E – MARCH 2009 – REVISED APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • • Low Supply-Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active


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    MSP430F551x MSP430F552x SLAS590E RGC 55 SLAU208 SLAS590E MSP430 MSP430F5528 SLAU278 RGC55 ADC12SHSx PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    ic ap 6928

    Abstract: sam4l SENSE16 10v regulator 7910 c QFN64 0x400A0000 swdp B-0100 embedded c programming of fibonacci series pulse width modulation tester diagram
    Text: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling


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    256Kbytes 64-bit 42023BS ic ap 6928 sam4l SENSE16 10v regulator 7910 c QFN64 0x400A0000 swdp B-0100 embedded c programming of fibonacci series pulse width modulation tester diagram PDF

    energy tapping identifier wireless data acquisition

    Abstract: interpolation CIC Filter iso 7811-9 sine wave pwm circuit pec 4179 Isdi cmos sensor edp 2339 ARM926EJ atmel sam4l ram schematic diagram
    Text: Features • Core • • • • – ARM CortexTM-M4 running at up to 48 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set picoPower® Technology for Ultra-low Power Consumption – Active mode downto 90µA/MHz with configurable voltage scaling


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    256Kbytes 64-bit 42023B energy tapping identifier wireless data acquisition interpolation CIC Filter iso 7811-9 sine wave pwm circuit pec 4179 Isdi cmos sensor edp 2339 ARM926EJ atmel sam4l ram schematic diagram PDF

    tray lqfp

    Abstract: JEDEC qfn tray QFn Package tray JEDEC TRAY DIMENSIONS QFN
    Text: ARM-based Flash MCU SAM4S Series SUMMARY DATASHEET Description The Atmel SAM4S series is a member of a family of Flash microcontrollers based on the high-performance 32-bit ARM Cortex ® -M4 RISC processor. It operates at a maximum speed of 120 MHz and features up to 2048 Kbytes of Flash, with optional


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    32-bit tray lqfp JEDEC qfn tray QFn Package tray JEDEC TRAY DIMENSIONS QFN PDF

    ixp435

    Abstract: Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465
    Text: Intel IXP435 Multi-Service Residential Gateway Reference Platform User’s Guide June 2007 Document Number: 316848; Revision: 001US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR


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    IXP435 001US 0x50000000 0x00080000 0x00000000 0x50800000 Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465 PDF

    STM32F103xC

    Abstract: STM32F103xC ADC1 CF 4093 N STM32F103xC boot STM32F103Rx STM32F103xE STM32F103xx STM32F103VC g717 stm32f103ve
    Text: STM32F103xC STM32F103xD STM32F103xE High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces Features FBGA • Core: ARM 32-bit Cortex -M3 CPU – 72 MHz maximum frequency, 1.25 DMIPS/MHz Dhrystone 2.1


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    STM32F103xC STM32F103xD STM32F103xE 32-bit 512KB STM32F103xC ADC1 CF 4093 N STM32F103xC boot STM32F103Rx STM32F103xE STM32F103xx STM32F103VC g717 stm32f103ve PDF

    SN65DSI96

    Abstract: No abstract text available
    Text: SN65DSI86 SN65DSI96 www.ti.com SLLSEH2 – SEPTEMBER 2013 MIPI DSI BRIDGE to eDP Check for Samples: SN65DSI86 , SN65DSI96 FEATURES APPLICATIONS • Embedded DisplayPort eDP 1.4 Compliant Supporting 1, 2, or 4 Lanes at 1.62Gbps (RBR), 2.7Gbps (HBR), or 5.4Gbps (HBR2).


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    SN65DSI86 SN65DSI96 62Gbps RGB666 RGB888 60fps 4096x2304 18bpp SN65DSI96 PDF

    sram 256mb 64X

    Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
    Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM


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    S71PL-J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K sram 256mb 64X S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL256N S71PL127J PDF

    ADS1296

    Abstract: respiration rate SBAS459 ADS1294 ADS1294R ADS1298 ADS1298R respiration sensor 30A high speed diode ECG analog mux
    Text: ADS1294, ADS1294R ADS1296, ADS1296R ADS1298, ADS1298R SBAS459H – JANUARY 2010 – REVISED MAY 2011 www.ti.com Low-Power, 8-Channel, 24-Bit Analog Front-End for Biopotential Measurements Check for Samples: ADS1294, ADS1294R, ADS1296, ADS1296R, ADS1298, ADS1298R


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    ADS1294, ADS1294R ADS1296, ADS1296R ADS1298, ADS1298R SBAS459H 24-Bit ADS1294R, ADS1296 respiration rate SBAS459 ADS1294 ADS1294R ADS1298 ADS1298R respiration sensor 30A high speed diode ECG analog mux PDF

    PC28F256P33

    Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
    Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read


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    P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte PC28F256P33 JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74 PDF

    JS28F256P33

    Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
    Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst


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    52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85 PDF

    W29GL256P

    Abstract: W29GL256
    Text: W29GL256P 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE W29GL256P Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1 FEATURES . 1


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    W29GL256P 256M-BIT W29GL256P W29GL256 PDF

    LH28F160S3NS-L10

    Abstract: LHF16KA1
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16KA1) Issue Date: March 16, 2001 sharp LHF16KA1 ●Handle this document carefully for it contains material protected by international copyright


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    LH28F160S3NS-L10 LHF16KA1) LHF16KA1 LH28F160S3NS-L10 LHF16KA1 PDF

    LH28F160S3HNS-L10A

    Abstract: LHF16KAU
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10A Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF16KAU) Spec No.: EL138074 Issue Date: September 5, 2001 sharp LHF16KAU ●Handle this document carefully for it contains material protected by international copyright


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    LH28F160S3HNS-L10A LHF16KAU) EL138074 LHF16KAU LH28F160S3HNS-L10A LHF16KAU PDF

    28F640J3

    Abstract: E28F640J3A-120 INTEL 28F320J3 TSOP 66 Package 28F128K3 28F256K3 TE28F640J3C-120 28F128J3 28F160S3 RC28F128J3C-150
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


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    28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead 28F640J3 E28F640J3A-120 INTEL 28F320J3 TSOP 66 Package 28F128K3 28F256K3 TE28F640J3C-120 28F128J3 28F160S3 RC28F128J3C-150 PDF

    Micron Q-Flash memory

    Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


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    128Mb, MT28F128J3, MT28F640J3, MT28F320J3 56-Pin x8/x16 128KB 128Mb) Micron Q-Flash memory FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11 PDF

    LCMXO2-1200HC-4TG100C

    Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
    Text: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1


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    HB1010 LCMXO2-1200HC-4TG100C LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC PDF