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    TRANSISTORS MDS Search Results

    TRANSISTORS MDS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS MDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIAC DB2

    Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
    Text: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors


    Original     		PDF C-120 OT-23 OT23-6L DO-213AB DO-214AC DO-214AA OT-223 O-252 DIAC DB2 BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF

    mj10016

    Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent

    transistor equivalent of BU406

    Abstract: bu406 replacement type transistor 2sc1827 transistor 1557 b transistor tip142 transistor 2SA1046 equivalent of transistor mje13007 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS


    Original     		PDF 220AB BU406 BU407 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B transistor equivalent of BU406 bu406 replacement type transistor 2sc1827 transistor 1557 b transistor tip142 transistor 2SA1046 equivalent of transistor mje13007 BU326 BU108 BU100

    CASE 221A Style 1

    Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10020 MJ10021 MJ10021 Performa32 TIP73B TIP74 TIP74A TIP74B TIP75 CASE 221A Style 1 BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent

    mje13009 equivalent

    Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power


    Original     		PDF BUV48/BUV48A BUV48 BUV48A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje13009 equivalent buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202

    BD139 fall time

    Abstract: TRANSISTOR REPLACEMENT GUIDE transistor cross reference BUS98 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,


    Original     		PDF BUS98 BUS98A BUS98A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD139 fall time TRANSISTOR REPLACEMENT GUIDE transistor cross reference 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127

    application MJ10023

    Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10022 MJ10023 MJ10023 Performanc32 TIP73B TIP74 TIP74A TIP74B TIP75 application MJ10023 BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    AMPLIFIER 2SD718 2sb688 schematic

    Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS


    Original     		PDF MJ1000 MJ1001* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C AMPLIFIER 2SD718 2sb688 schematic MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250

    2sd880 equivalent

    Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852*  Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They


    Original     		PDF MJE5850, MJE5851 MJE5852 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sd880 equivalent tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100

    Motorola transistors MJE3055 TO 127

    Abstract: MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.


    Original     		PDF D44VH D45VH TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola transistors MJE3055 TO 127 MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original     		PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    2SA1046

    Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


    Original     		PDF 2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement

    2Sd331 npn transistor

    Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


    Original     		PDF 2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 MJD122* MJD127* TIP73B TIP74 2Sd331 npn transistor 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326

    2SC1943

    Abstract: 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices


    Original     		PDF MJ15011 MJ15012 MJ15011* MJ15012* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC1943 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341

    MJ15015 TRANSISTOR REPLACEMENT GUIDE

    Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


    Original     		PDF 2N3055 MJ2955. 2N3055A MJ15015* MJ2955A MJ15016* TIP73B TIP74 TIP74A TIP74B MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051

    BU108

    Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS


    Original     		PDF MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60

    mje15033 replacement

    Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver


    Original     		PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


    Original     		PDF 2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100

    BU108

    Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS


    Original     		PDF 2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100

    2SA1046

    Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated


    Original     		PDF 2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876

    2SA70

    Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


    Original     		PDF 2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100

    KN303

    Abstract: n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier
    Text: nOAEBblE TPAH3HCTOPBI FIELD-EFFECT TRANSISTORS FELDEFFEKTTRANSISTOR EN TRANSISTORS A EFFET DE CHAMP IST 2 riEPEHEHb TPAH3MCTOPOB LIST OF TRANSISTORS TRANSISTORENLISTE LISTE DE TRANSISTORS Grp. Page Knioir-KmoiE 11 Kni03E-Kni03M Kni03EP-KTI103MP 15 KriC104A-KnC104XI .


    OCR Scan     		PDF KriC104A-KnC104XI KnC202A-KnC20 -Kn202E Kni03E-Kni03M Kni03EP-KTI103MP Kn201E-Kn201/l Kn301B Kn302A-Kn302r. Kn303A-Kn303H Kn304A. KN303 n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier

    sef530

    Abstract: SEF532 SEF531 60v 9A c243s
    Text: S G'S-THOMSON. 0 7 E 73C D 17*12*1237 17518 D •\ ' T N-CHANNEL POWER MDS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement mode Power-Mos field effect transistors. A B SO LU TE MAXIMUM RATINGS


    OCR Scan     		PDF SEF530 SEF531 SEFS32 sif533 00V/60V 00V/60V SEF532/SEF533 300ms, SGSP361 C-243 SEF532 60v 9A c243s