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    2N5877 Search Results

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    2N5877 Price and Stock

    Microchip Technology Inc 2N5877

    PNP POWER TRANSISTOR SILICON AMP
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    DigiKey 2N5877 Bulk 100
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    Avnet Americas 2N5877 Bulk 36 Weeks 100
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    Mouser Electronics 2N5877
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    Microchip Technology Inc 2N5877 1
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    Onlinecomponents.com 2N5877
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    NAC 2N5877 Tray 5
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    Master Electronics 2N5877
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    Motorola Semiconductor Products 2N5877

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    Quest Components 2N5877 4
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    2N5877 6
    • 1 $10.0524
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    2N5877 4
    • 1 $142.8
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    2N5877 6
    • 1 $80
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    RCA 2N5877

    POWER BIPOLAR TRANSISTOR, 10A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
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    Quest Components 2N5877 19
    • 1 $52
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    STMicroelectronics 2N5877

    POWER BIPOLAR TRANSISTOR, 10A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
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    Quest Components 2N5877 18
    • 1 $3.36
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    Fairchild Semiconductor Corporation 2N5877

    POWER BIPOLAR TRANSISTOR, 10A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5877 8
    • 1 $142.8
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    2N5877 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5877 On Semiconductor 10 AMPERE COMPLEMENTARY Original PDF
    2N5877 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N5877 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5877 API Electronics Short form transistor data Short Form PDF
    2N5877 Central Semiconductor Complementary Silicon Power Transistors, TO-3 Scan PDF
    2N5877 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N5877 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N5877 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N5877 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5877 General Transistor Power Transistor Selection Guide Scan PDF
    2N5877 Mospec POWER TRANSISTORS(10A,150W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N5877 Mospec Complementary Silicon High-Power Transistor Scan PDF
    2N5877 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5877 Motorola The European Selection Data Book 1976 Scan PDF
    2N5877 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5877 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5877 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5877 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5877 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5877 Unknown Transistor Replacements Scan PDF

    2N5877 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5875

    Abstract: 2N5876 2N5877 2N5878
    Text: SavantIC Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original
    PDF 2N5875 2N5876 2N5877 2N5878 2N5875 2N5876 2N5878

    b0245a

    Abstract: b0607 PH3055T FT3055 SOLITRON B0501A MJE280H MJE2801K MJE3055K
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 2N5877 SOT7732 SOT7732 SOT7732 SOT7742 SOT7742 SOT7742 SOT7762 ~g:gg~~ 35 40 SOT7012 SOT7475 2N2811 OTL8012 SOT3226 SOT3226 SOT3226 SOT85307 SD+;5~01 45 50 55 60 65 70 SOT85507 SOT85607 SOT85607


    Original
    PDF B0207 BOW21A B0501A OT7618 FT3055 SSP66A 2N6098 2N6099 b0245a b0607 PH3055T SOLITRON MJE280H MJE2801K MJE3055K

    Untitled

    Abstract: No abstract text available
    Text: 2N5877 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5877 O204AA) 18-Jun-02

    2N5877

    Abstract: 2N5875
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original
    PDF 2N5875 2N5877 O-204AA) 2N5875 2N5877

    2N5878 motorola

    Abstract: motorola 2N5877 2N5877 2N5877 power transistor 2N5878 2n5875 motorola 1N5825 2N5875 2N5876 MSD6100
    Text: MOTOROLA Order this document by 2N5877/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original
    PDF 2N5877/D* 2N5877/D 2N5878 motorola motorola 2N5877 2N5877 2N5877 power transistor 2N5878 2n5875 motorola 1N5825 2N5875 2N5876 MSD6100

    2N5878

    Abstract: 2N5877 2N5875 2N5876
    Text: SavantIC Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5875 2N5876 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original
    PDF 2N5877 2N5878 2N5875 2N5876 2N5877 2N5878 2N5876

    Untitled

    Abstract: No abstract text available
    Text: 2N5877 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5877 O204AA) 16-Jul-02

    2N5877

    Abstract: No abstract text available
    Text: 2N5877 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5877 O204AA) 31-Jul-02 2N5877

    2N5877

    Abstract: 2N5878 2N5875 2N5876
    Text: Inchange Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5875 2N5876 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original
    PDF 2N5877 2N5878 2N5875 2N5876 2N5877 2N5878 2N5876

    2N5877

    Abstract: No abstract text available
    Text: 2N5877 Complementary silicon high-power transistor 7.70 Transistors Tr. 1 of 1 Home Part Number: 2N5877 Online Store 2N5877 Diodes C o m plem entary s ilico n high- po w er t ransis t o r Transistors


    Original
    PDF 2N5877 com/2n5877 2N5877

    2N5875

    Abstract: 2N5876 2N5877 2N5878
    Text: Inchange Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5877 2N5878 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original
    PDF 2N5875 2N5876 2N5877 2N5878 2N5875 2N5876 2N5878

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original
    PDF 2N5875 2N5877 O-204AA)

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original
    PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    2N5877

    Abstract: 2N5878
    Text: TYPES 2N5877, 2N5878 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYPES 2N5877, 2 N 5878 BULLETIN NO. DL-S 7111624, DECEMBER FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D E SIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5875, 2N 58 76


    OCR Scan
    PDF 2N5877, 2N5878 2N5877 2N5877

    2N5876

    Abstract: 2N5875 2N5878 2N5877
    Text: ÆAMOS PEC COMPLEMENTARY SILICON PNP 2N5875 2N5876 HIGH-POWER TRANSISTORS General-purpose power amplifier and switching applications NPN 2N5877 2N5878 FEATURES: * Low Collector-Emitter Saturation Voltage v c b s a t = 1.0V Max.)@lc=5.0A * Execllent DC Current Gain hFE = 20 ~ 100 @ lc = 4.0 A


    OCR Scan
    PDF 2N5875 2N5877 2N5876 2N5878 2N5877 2N5878 2N5876,

    Untitled

    Abstract: No abstract text available
    Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.


    OCR Scan
    PDF 2N5875-2N5876 2N5877-2N5878 2N5877 2N5878 2N5875 2N5876 hFE-10 2N5875/6/7/8

    2N5877

    Abstract: 2N5878
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors *M otoroli Preferred D *v lc* . . . designed for general-purpose power amplifier and switching applications. • • • • 10 AMPERE COMPLEMENTARY SILICON


    OCR Scan
    PDF 2N5877 2N5878 2N5878

    23487

    Abstract: 2N60G3 23472
    Text: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634


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    PDF STD60 NPN-19 23487 2N60G3 23472

    2N5876

    Abstract: 2N5878 2N5875 2N5877
    Text: Datasheet c c v n iD i Semiconductor Corp. 2N5875 2N5876 PNP 2N5877 2N5878 NPN C O M P L EMENTARY SILICON POWER TRANSISTORS 145 A d a m s Avenue, Hauppauge, N Y 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF 2N5875 2N5876 2N5877 2N5878 2N5875, 200mA

    2N5876

    Abstract: 2N5875
    Text: TYPES 2N587S, 2NS876 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS • TYPES 2N5875, 2N5876 BULLETIN NO. OL-S 7111608, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5877, 2N5878 150 Watts at 25°C Case Temperature


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    PDF 2N587S, 2NS876 2N5877, 2N5878 2N5875, 2N5876 2N5875

    BU4060

    Abstract: BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D
    Text: CRIMSON S E M I C O N D U C T OR INC DE~| 2 5 1MCHfc. ODDOBBS 2514096 CRIMSON SEMICONDUCTOR INC . 99D 00335 T3S-o/ D EPITAXIAL BASH TO-3 continued NPN PNP 2N 3716 2N 5873 2N 5874 2N5877 2N5878 2N6055 2N 6056 2N 6057 2N 6058 2N 6059 2N3792 2N5871 2N5872 2N 5875


    OCR Scan
    PDF 5S14D 33-O/ 2N3716 2N3792 2N5873 2N5871 2N5874 2N5872 2N5877 2N5875 BU4060 BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D

    2n5875 motorola

    Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876
    Text: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 | 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


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    PDF 2N5875, 2N5876 2N5877, 2N5878 2n5875 motorola 2N5878 2N5875 2N5877 2N5875 2N5876

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


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    PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447