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    N306A Price and Stock

    Rochester Electronics LLC ISL9N306AS3ST

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISL9N306AS3ST Bulk 33,931 807
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    • 1000 $0.37
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    Rochester Electronics LLC ISL9N306AD3ST

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISL9N306AD3ST Bulk 8,371 807
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    • 1000 $0.37
    • 10000 $0.37
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    Rochester Electronics LLC ISL9N306AP3

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISL9N306AP3 Bulk 398
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    • 1000 $0.75
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    Fairchild Semiconductor Corporation ISL9N306AD3

    50A, 30V, N-Channel Power MOSFET, TO-251AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics ISL9N306AD3 8,004 1
    • 1 $0.9556
    • 10 $0.9556
    • 100 $0.8983
    • 1000 $0.8123
    • 10000 $0.8123
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    Fairchild Semiconductor Corporation ISL9N306AD3ST

    50A, 30V, N-Channel Power MOSFET, TO-252AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics ISL9N306AD3ST 8,371 1
    • 1 $0.3754
    • 10 $0.3754
    • 100 $0.3529
    • 1000 $0.3191
    • 10000 $0.3191
    		Buy Now
    Find more N306A price and stock on Findchips.com

    N306A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N306AS

    Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
    Text: N306AP3/N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		PDF ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS n306a ISL9N306AP3 ISL9N306AS3ST 45E-2

    N306AS

    Abstract: N306A ISL9N306AS3ST ISL9N306AP3
    Text: N306AP3/N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		PDF ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS N306A ISL9N306AS3ST ISL9N306AP3

    n306ad

    Abstract: ISL9N306AD3ST 39e3 N-306A
    Text: N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		PDF ISL9N306AD3ST 3400pF O-252 n306ad ISL9N306AD3ST 39e3 N-306A

    n306ad

    Abstract: N306A ISL9N306AD3
    Text: N306AD3 / N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A

    N306AD

    Abstract: N306A
    Text: N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		PDF ISL9N306AD3ST 3400pF O-252 N306AD N306A

    n306ad

    Abstract: N306A
    Text: PWM Optimized N306AD3ST/ N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N306AD3ST/ ISL9N306AD3 3400pF O-252 O-252) O-251AA) n306ad N306A

    n306ad

    Abstract: N306A ISL9N306AD3 ISL9N306AD3ST
    Text: N306AD3 / N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		PDF ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A ISL9N306AD3ST

    2T931A

    Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
    Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K


    OCR Scan     		PDF MOKP51KOB, KTC631 TI2023 II2033 TT213 TI216 fI217 II302 XI306 n306A 2T931A KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A

    u574

    Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D
    Text: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16


    OCR Scan     		PDF Q8718 ISO-9001: 100MHz 300MHz 400MHz 800MHz 144/430MHZ u574 IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D

    1HT251

    Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
    Text: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A


    OCR Scan     		PDF FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313

    N317

    Abstract: n334 N-338 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a
    Text: -Gfo, N CONNECTORS S in c e 1 9 7 8 ORDERING INFORMATION t N-301A-B S G T INSULATION D DELRIN T TEFLON P PLASTIC PB PBT POLYESTER PH PHENOLIC CONTACT PLATING C CHROME G GOLD N NICKEL S SILVER BODY PLATING C CHROME G GOLD N NICKEL -* S SILVER BODY MATERIAL


    OCR Scan     		PDF N-301A-B N-301 N-313 N-325 N-337 N-302 N-314 N-326 N-338 N-303 N317 n334 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a

    2T908A

    Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
    Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,


    OCR Scan     		PDF T-0574D. 30Eiaa Coi03nojiH 2T908A 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117

    KC156A

    Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
    Text: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:


    OCR Scan     		PDF XapfaKOB-57, KC156A ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213

    KN303

    Abstract: n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier
    Text: nOAEBblE TPAH3HCTOPBI FIELD-EFFECT TRANSISTORS FELDEFFEKTTRANSISTOR EN TRANSISTORS A EFFET DE CHAMP IST 2 riEPEHEHb TPAH3MCTOPOB LIST OF TRANSISTORS TRANSISTORENLISTE LISTE DE TRANSISTORS Grp. Page Knioir-KmoiE 11 Kni03E-Kni03M Kni03EP-KTI103MP 15 KriC104A-KnC104XI .


    OCR Scan     		PDF KriC104A-KnC104XI KnC202A-KnC20 -Kn202E Kni03E-Kni03M Kni03EP-KTI103MP Kn201E-Kn201/l Kn301B Kn302A-Kn302r. Kn303A-Kn303H Kn304A. KN303 n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier