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    2N6387 Price and Stock

    onsemi 2N6387G

    TRANS NPN DARL 60V 10A TO220
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    DigiKey 2N6387G Tube 139 1
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    Avnet Americas 2N6387G Tube 10 Weeks 1,300
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    Mouser Electronics 2N6387G 4,304
    • 1 $1.56
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    Newark 2N6387G Bulk 400
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    Onlinecomponents.com 2N6387G 850
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    Bristol Electronics 2N6387G 100
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    Quest Components 2N6387G 80
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    Rochester Electronics 2N6387G 421 1
    • 1 $0.5458
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    TME 2N6387G 29 1
    • 1 $1.162
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    Avnet Silica 2N6387G 11 Weeks 50
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    EBV Elektronik 2N6387G 12 Weeks 50
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    Master Electronics 2N6387G 850
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    Rochester Electronics LLC 2N6387

    TRANS NPN DARL 60V 10A TO220AB
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    DigiKey 2N6387 Bulk 247
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    2N6387 Tube 247
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    onsemi 2N6387

    TRANS NPN DARL 60V 10A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6387 Tube
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    Bristol Electronics 2N6387 30
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    2N6387 5
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    Quest Components 2N6387 46
    • 1 $1.362
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    • 100 $0.681
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    2N6387 4
    • 1 $1.5
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    Rochester Electronics 2N6387 1,679 1
    • 1 $1.17
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    • 100 $1.1
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    onsemi 2N6387G.

    Darlington Transistor, Npn, 60V, To-220; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:60V Rohs Compliant: Yes |Onsemi 2N6387G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2N6387G. Bulk 50
    • 1 -
    • 10 $1.21
    • 100 $0.882
    • 1000 $0.649
    • 10000 $0.636
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    Motorola Semiconductor Products 2N6387

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    Bristol Electronics 2N6387 69
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    2N6387 8
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    Quest Components 2N6387 3
    • 1 $0.93
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    2N6387 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6387 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    2N6387 Motorola Plastic Medium Power Silicon Transistor Original PDF
    2N6387 On Semiconductor Plastic Medium-Power Silicon Transistor Original PDF
    2N6387 On Semiconductor Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 - 80 VOLTS Original PDF
    2N6387 On Semiconductor Plastic Medium-Power Transistors Original PDF
    2N6387 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6387 Boca Semiconductor DARLINGTON SILICON POWER TRANSISTORS Scan PDF
    2N6387 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan PDF
    2N6387 Central Semiconductor Power Transistors Scan PDF
    2N6387 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    2N6387 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6387 General Electric 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. Scan PDF
    2N6387 Mospec POWER TRANSISTORS(65W) Scan PDF
    2N6387 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6387 Motorola European Master Selection Guide 1986 Scan PDF
    2N6387 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6387 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6387 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6387 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6387 Unknown Transistor Replacements Scan PDF

    2N6387 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6387

    Abstract: 1N5825 2N6388 MSD6100
    Text: MOTOROLA Order this document by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE


    Original
    2N6387/D* 2N6387/D 2N6387 1N5825 2N6388 MSD6100 PDF

    2N6387

    Abstract: 2N6387-D 1N5825 2N6388 MSD6100
    Text: ON Semiconductor 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60–80 VOLTS


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    2N6387 2N6388* 2N6388 2N6387, 220AB r14525 2N6387/D 2N6387 2N6387-D 1N5825 2N6388 MSD6100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc


    Original
    2N6387, 2N6388 2N6387 O-220AB 2N6387/D PDF

    2N6387

    Abstract: 2N6388 1N5825 2N6387G 2N6388G MSD6100
    Text: 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium−Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc


    Original
    2N6387, 2N6388 2N6388 2N6387 O-220AB 2N6387/D 2N6387 1N5825 2N6387G 2N6388G MSD6100 PDF

    2N6388 AT MICROELECTRONICS

    Abstract: 2N6387 2N6388 NPN POWER DARLINGTON TRANSISTORS
    Text: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS • ■ ■ ■ 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic


    Original
    2N6387 2N6388 2N6388 2N6387 O-220 O-220 2N6388 AT MICROELECTRONICS NPN POWER DARLINGTON TRANSISTORS PDF

    2N6388

    Abstract: 2N6387
    Text: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


    Original
    2N6387 2N6388* 2N6387 2N6388 2N6387, O-220AB PDF

    2N6387

    Abstract: 2N6388
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 2N6388 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS


    Original
    2N6387 2N6388 O-220 C-120 2N6387 2N6388Rev 310505E 2N6388 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 2N6388 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS


    Original
    2N6387 2N6388 O-220 C-120 2N6387 2N6388Rev 310505E PDF

    2N6387

    Abstract: 2N6388
    Text: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS n 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.


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    2N6387 2N6388 2N6388 2N6387 O-220 O-220 PDF

    2N6388

    Abstract: 2N6388G 2N6387 2N6387G
    Text: 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 Typ @ IC = 4.0 Adc •ăCollector-Emitter Sustaining Voltage - @ 100 mAdc


    Original
    2N6387, 2N6388 2N6388 2N6387 O-220AB 2N6388G 2N6387 2N6387G PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc


    Original
    2N6387, 2N6388 2N6387 220AB 2N6387/D PDF

    2N6388

    Abstract: 2N6387 2N6386
    Text: JMnic Product Specification 2N6386 2N6387 2N6388 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2N6666/6667/6668 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・Designed for general-purpose amplifier


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    2N6386 2N6387 2N6388 O-220C 2N6666/6667/6668 2N6386 2N6387 2N6388 PDF

    transistor A05

    Abstract: 2N6388 npn darlington 2N6386 2N6387 2N6666 2N6667 2N6668 Complementary Darlington Audio Power Amplifier 079V
    Text: ÏÏÏ 38 75081 dF | 3 fl? S D Û l Q Q l7E 4fl 7 G E S OL ID S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington


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    2N6386, 2N6387, 2N6388 10-Ampere 2N6388) 2N6386) O-220AB transistor A05 npn darlington 2N6386 2N6387 2N6666 2N6667 2N6668 Complementary Darlington Audio Power Amplifier 079V PDF

    Untitled

    Abstract: No abstract text available
    Text: • o o 2 t i 3 EH ü ■ SCS-THOMSON IW fô m i « ! S G S - THOMSON ^ T - 3 3 * z ° i 2N6386 2N6387/2N6388 30E ]> POWER DARLINGTON TRANSISTORS D E S C R IP T IO N The 2N6386, 2N6387 and 2N6388 are silicon epi­ taxial-base NPN transistors in monolithic Darling­


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    2N6386 2N6387/2N6388 2N6386, 2N6387 2N6388 O-220 BDX33/6DX34 PDF

    2n6386

    Abstract: No abstract text available
    Text: ÏÏÏ 38 75 081 dF | 3fl? S D Û l QQl 7E4f l G E SO L I D S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington


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    2N6386, 2N6387, 2N6388 10-Ampere O-220AB 2n6386 PDF

    Untitled

    Abstract: No abstract text available
    Text: File Num ber 610 2N6386, 2N6387, 2N6388 10-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A 2N6387, 2N6388 Gain of 1000 at 3 A (2N6386) I! o Features: t • Operates from 1C without predriver :


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    2N6386, 2N6387, 2N6388 10-Ampere 2N6388) 2N6386) O-22QAB PDF

    mj2955 TO-220

    Abstract: 2N3055 TO-220 MJ2955 BDX54S BDX18 2N3055 TO-3 4116-4 bdw21 BDX88b crimson 5110
    Text: CRIMSON SEM IC ONDUC TO R INC d F | asm C H b 2514096 CRIMSON SEMICONDUCTOR 99D 00 33 4 INC D 7 EPITAXIAL BASE - TO -220 continued I ' j " NPN PNP TIP121 TIP122 TIP130 TIP131 TIP132 2N6121 2N6122 2N6123 2N6288 2N6290 2N6292 2N6386 2N6387 2N6388 2N6486 2N6487


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    O-220 7--33L-e TIP121 TIP126 TIP122 TIP127 TIP130 TIP135 TIP131 mj2955 TO-220 2N3055 TO-220 MJ2955 BDX54S BDX18 2N3055 TO-3 4116-4 bdw21 BDX88b crimson 5110 PDF

    2N6386

    Abstract: MOTOROLA 6-38-7
    Text: MOTORCL A SC X S TRS/ R F 15E 0 | b3fc.72S4 0 0 0 ^ 4 4 2N6386 2N6387 2N6388 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER SILICON TRANSISTORS DARLINGTON . . . designed for general-purpose amplifier and low-speed switching 8 AND 10 AMPERE applications.


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    2N6386 2N6387 2N6388 MOTOROLA 6-38-7 PDF

    2N6388

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N6387 2N6388 [MSIfiiSilLiSìlKìtÉfflOSS SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and


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    2N6387 2N6388 2N6388 O-220 PDF

    2n6388

    Abstract: 2n6387 NPN POWER DARLINGTON TRANSISTORS
    Text: Æ 7 SGS-THOM SON Ä IM M i ltLi© îi® iies 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE • NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTtPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION


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    2N6387 2N6388 2N6388 O-220 NPN POWER DARLINGTON TRANSISTORS PDF

    SCR 2N6399

    Abstract: 2N6424 2N6399 2N6407 2N63 2N6384 2N6385 2N6386 2N6387 2N6388
    Text: SEMELAB LTD Type N°. 37E » Option"^ Po,ari,V Package VCEO fil33ia? QGOOOSfl 2 • S M L B ^ nJ hr e < VCE/'C PD 2N6384 2N6385 2N6386 2N6387 2N6388 SCREEN SCREEN NPN NPN NPN NPN NPN 103 T03 T0220 10220 T0220 60 80 40 60 80 10 10 8 10 10 lk-20k lk-20k lk-20k


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    2N6384 lk-20k 2N6385 2N6386 T0220 2N6387 SCR 2N6399 2N6424 2N6399 2N6407 2N63 2N6386 2N6387 2N6388 PDF

    2n6388

    Abstract: 2N6387 2N6386 2N6666 2N6667 2N6668
    Text: ¿ J A m o s p e c DARLINGTON SILICON POWER TRANSISTORS NPN 2N6386 2N6387 2N6388 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV c e o c s u s , = 40 V Min - 2N6386 = 60 V (Min) - 2N6387


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    2N6386 2N6387 2N6388 2N6666, 2N6667, 2N6668 2N6386 2N6387, 2n6388 2N6387 2N6666 2N6667 2N6668 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 2N 6388* Plastic Medium-Power Silicon Transistors ‘ Motorola Preferred Device . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications.


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    2N6387/D 2N6387 21A-06 O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: rz z Ä T# S G S -T H O M S O N « « L E M « ! 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE D ESCRIP TIO N


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    2N6387 2N6388 2N6388 O-220 PDF