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    TRANSISTOR SM 200 Search Results

    TRANSISTOR SM 200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SM 200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZDT6753 100V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SM-8 Features Mechanical Data • • Case: SM-8 8 LEAD SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • NPN Transistor • BVCEO > 100


    Original     		PDF ZDT6753 OT223) 300mV J-STD-020 -100V -300mV MIL-STD-202, DS33209

    10j312

    Abstract: GT10J312 marking code SM diode
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)


    Original     		PDF GT10J312 GT10J312, 10j312 marking code SM diode

    GT10J312

    Abstract: No abstract text available
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312,GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm GT10J312 The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.)


    Original     		PDF GT10J312 GT10J312

    GT15J311

    Abstract: No abstract text available
    Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)


    Original     		PDF GT15J311

    Untitled

    Abstract: No abstract text available
    Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)


    Original     		PDF GT15J311

    Untitled

    Abstract: No abstract text available
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312,GT10J312(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) Low Saturation Voltage


    Original     		PDF GT10J312

    Untitled

    Abstract: No abstract text available
    Text: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TENTATIVE GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 5A)


    Original     		PDF GT5J311

    GT10J312

    Abstract: No abstract text available
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312,GT10J312(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) Low Saturation Voltage


    Original     		PDF GT10J312

    15J311

    Abstract: 15J311 EQUIVALENT transistor 15j311 toshiba code igbt GT15J311
    Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.) (IC = 15A)


    Original     		PDF GT15J311 GT15J311, 15J311 15J311 EQUIVALENT transistor 15j311 toshiba code igbt

    GT5J311

    Abstract: General Semiconductor SM
    Text: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TENTATIVE GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 5A)


    Original     		PDF GT5J311 General Semiconductor SM

    5j311

    Abstract: GT5J311 marking code SM diode
    Text: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J311, GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.) (IC = 5A)


    Original     		PDF GT5J311 GT5J311, 5j311 marking code SM diode

    10j312

    Abstract: GENERAL SEMICONDUCTOR MARKING SM
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.)


    Original     		PDF GT10J312 GT10J312, 10j312 GENERAL SEMICONDUCTOR MARKING SM

    Untitled

    Abstract: No abstract text available
    Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SB1667

    GT25G102

    Abstract: No abstract text available
    Text: GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G102 2-10S2C

    B1667

    Abstract: 2SB1667 W301
    Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SB1667 B1667 W301

    2SD2414

    Abstract: No abstract text available
    Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2414 2-10S2

    Untitled

    Abstract: No abstract text available
    Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2414 2-10S2

    15J311

    Abstract: No abstract text available
    Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.) (IC = 15A)


    Original     		PDF GT15J311 GT15J311, 15J311

    gt25g101

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 2-10S2C

    2SD2414

    Abstract: D2414
    Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2414 2-10S2 D2414

    2SD2414

    Abstract: D2414
    Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2414 2-10S2 D2414

    1117 S Transistor

    Abstract: No abstract text available
    Text: GT10J312,GT10J312 SM TO SHIBA GT10J312, GT10J312(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode High Speed


    OCR Scan     		PDF GT10J312 GT10J312, GT10J312 30//s 1117 S Transistor

    GT5J311

    Abstract: No abstract text available
    Text: GT5J311 ,GT5J311 SM TO SHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J311, GT5J311(SM) HIGH POWER SWITCHING APPLICATIONS Unit in mm GT5J311 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode High Speed


    OCR Scan     		PDF GT5J311 GT5J311, GT5J311

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors IMX17 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Two 2 S D 1 4 8 4 K chips in an SM T package. 2) Mounting possible with SM T3 au­ tomatic mounting machine. 3) Transistor elements are indepen­


    OCR Scan     		PDF IMX17 2SD1484K 500mA