GT10J312, Search Results
GT10J312, Price and Stock
Toshiba America Electronic Components GT10J312(Q)IGBT 600V 10A 60W TO220SM |
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GT10J312(Q) | Tube |
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Toshiba America Electronic Components GT10J312SILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT10J312 | 100 |
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GT10J312, Datasheets (9)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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GT10J312 |
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Insulated Gate Bipolar Transistor Silicon N-Channel IGBT | Original | |||
GT10J312 |
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Original | ||||
GT10J312 |
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Discrete IGBTs | Original | |||
GT10J312 |
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Discrete IGBTs | Original | |||
GT10J312 |
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N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Scan | |||
GT10J312(Q) |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 10A 60W TO220SM | Original | |||
GT10J312(SM) |
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Original | ||||
GT10J312SM |
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SILICON N CHANNEL IGBT | Original | |||
GT10J312(SM) |
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N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Scan |