10J312 Search Results
10J312 Price and Stock
Toshiba America Electronic Components GT10J312(Q)IGBT 600V 10A 60W TO220SM |
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GT10J312(Q) | Tube |
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Toshiba America Electronic Components GT10J312SILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT10J312 | 100 |
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10J312 Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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10j312
Abstract: GENERAL SEMICONDUCTOR MARKING SM
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GT10J312 GT10J312, 10j312 GENERAL SEMICONDUCTOR MARKING SM | |
10j312
Abstract: GT10J312 marking code SM diode
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GT10J312 GT10J312, 10j312 marking code SM diode | |
10j312
Abstract: GT10J312 transistor sm GT10J312SM
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GT10J312 GT10J312, 10j312 transistor sm GT10J312SM |