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    Toshiba America Electronic Components GT10J312(Q)

    IGBT 600V 10A 60W TO220SM
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    DigiKey GT10J312(Q) Tube
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    Toshiba America Electronic Components GT10J312

    SILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA GT10J312 100
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    10J312 Datasheets Context Search

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    10j312

    Abstract: GENERAL SEMICONDUCTOR MARKING SM
    Text: 10J312,10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J312, 10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.)


    Original     		PDF GT10J312 GT10J312, 10j312 GENERAL SEMICONDUCTOR MARKING SM

    10j312

    Abstract: GT10J312 marking code SM diode
    Text: 10J312,10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J312, 10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)


    Original     		PDF GT10J312 GT10J312, 10j312 marking code SM diode

    10j312

    Abstract: GT10J312 transistor sm GT10J312SM
    Text: 10J312,10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J312, 10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s (Max.)


    Original     		PDF GT10J312 GT10J312, 10j312 transistor sm GT10J312SM