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Toshiba America Electronic Components GT5J311 SILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	GT5J311		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Switchcraft Conxall 15J3113 Circular DIN Connectors
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Sager	15J3113					1 - 10 - 100 - 1000 - 10000 -	Buy Now

5J311 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 5J311,5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 5J311, 5J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s (Max.) (IC = 5A)	Original	GT5J311 GT5J311,	PDF
5j311 Abstract: GT5J311 marking code SM diode Text: 5J311,5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 5J311, 5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.) (IC = 5A)	Original	GT5J311 GT5J311, 5j311 marking code SM diode	PDF
Untitled Abstract: No abstract text available Text: 5J311,5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 5J311, 5J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.) (IC = 5A)	Original	GT5J311 GT5J311,	PDF
GENERAL SEMICONDUCTOR MARKING SM Abstract: toshiba code igbt GT5J311 General Semiconductor SM Text: 5J311,5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 5J311, 5J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s (Max.) (IC = 5A)	Original	GT5J311 GT5J311, GENERAL SEMICONDUCTOR MARKING SM toshiba code igbt General Semiconductor SM	PDF