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    TRANSISTOR SC82 Search Results

    TRANSISTOR SC82 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SC82 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    SC82

    Abstract: transistor SC82
    Text: 4-Lead Thin Shrink Small Outline Transistor Package [SC70] KS-4 Dimensions shown in millimeters a 2.20 1.80 4 1 0.65 BSC 3 2 2.40 1.80 0.50 BSC 1.00 0.80 1.10 0.80 0.10 MAX COPLANARITY 0.10 0.30 0.15 *0.70 0.50 SEATING PLANE 0.40 0.10 0.18 0.10 *PACKAGE OUTLINE CORRESPONDS IN FULL TO EIAJ SC82


    Original     		PDF 72809-A SC82 transistor SC82

    n06hd

    Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
    Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and


    Original     		PDF TND310 TND310/D n06hd N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220

    Untitled

    Abstract: No abstract text available
    Text: MCH4017 Ordering number : ENA1912 SANYO Semiconductors DATA SHEET MCH4017 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF ENA1912 MCH4017 10GHz 020A-003 A1912-9/9

    Untitled

    Abstract: No abstract text available
    Text: MCH4015 Ordering number : ENA1911 SANYO Semiconductors DATA SHEET MCH4015 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF ENA1911 MCH4015 10GHz 020A-002 A1911-9/9

    Untitled

    Abstract: No abstract text available
    Text: MCH4020 Ordering number : ENA1280A SANYO Semiconductors DATA SHEET MCH4020 NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=16GHz typ (VCE=5V)


    Original     		PDF MCH4020 ENA1280A 16GHz A1280-11/11

    MCH4017

    Abstract: ic 7848 SC-82AB sot-343
    Text: MCH4017 Ordering number : ENA1912 SANYO Semiconductors DATA SHEET MCH4017 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF ENA1912 MCH4017 10GHz 020A-003 A1912-9/9 MCH4017 ic 7848 SC-82AB sot-343

    TRANSISTOR C 2577

    Abstract: C 2577 transistor
    Text: MCH4014 Ordering number : ENA1921 SANYO Semiconductors DATA SHEET MCH4014 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF ENA1921 MCH4014 10GHz 020A-002 A1921-10/10 TRANSISTOR C 2577 C 2577 transistor

    3225 0644

    Abstract: No abstract text available
    Text: MCH4014 Ordering number : ENA1921 SANYO Semiconductors DATA SHEET MCH4014 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF MCH4014 ENA1921 10GHz A1921-10/10 3225 0644

    Untitled

    Abstract: No abstract text available
    Text: MCH4016 Ordering number : ENA1922 SANYO Semiconductors DATA SHEET MCH4016 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF MCH4016 ENA1922 10GHz A1922-10/10

    Untitled

    Abstract: No abstract text available
    Text: MCH4017 Ordering number : ENA1912 SANYO Semiconductors DATA SHEET MCH4017 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF MCH4017 ENA1912 10GHz A1912-9/9

    tl 0741

    Abstract: A19118 MCH4015 IC 7494
    Text: MCH4015 Ordering number : ENA1911 SANYO Semiconductors DATA SHEET MCH4015 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF ENA1911 MCH4015 10GHz 020A-002 A1911-9/9 tl 0741 A19118 MCH4015 IC 7494

    MCH4016

    Abstract: 8732 01 0944
    Text: MCH4016 Ordering number : ENA1922 SANYO Semiconductors DATA SHEET MCH4016 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF ENA1922 MCH4016 10GHz 020A-003 A1922-10/10 MCH4016 8732 01 0944

    TL 0621

    Abstract: No abstract text available
    Text: MCH4016 Ordering number : ENA1922 SANYO Semiconductors DATA SHEET MCH4016 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF ENA1922 MCH4016 10GHz 020A-003 A1922-10/10 TL 0621

    Untitled

    Abstract: No abstract text available
    Text: MCH4015 Ordering number : ENA1911 SANYO Semiconductors DATA SHEET MCH4015 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF MCH4015 ENA1911 10GHz A1911-9/9

    A1268

    Abstract: A1268 transistor
    Text: MCH4013 Ordering number : ENA1268A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4013 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • High cut-off frequency : fT=22.5GHz typ VCE=3V Low operating voltage


    Original     		PDF MCH4013 ENA1268A 150When A1268-6/6 A1268 A1268 transistor

    TRANSISTOR cBC 449

    Abstract: gt 1141 transistor GT 1083 A1280-1 TRANSISTOR CATALOG sot 404 NPN/cbc 639
    Text: MCH4020 Ordering number : ENA1280A SANYO Semiconductors DATA SHEET MCH4020 NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=16GHz typ (VCE=5V)


    Original     		PDF ENA1280A MCH4020 16GHz 020A-002 A1280-11/11 TRANSISTOR cBC 449 gt 1141 transistor GT 1083 A1280-1 TRANSISTOR CATALOG sot 404 NPN/cbc 639

    MCH4014

    Abstract: ENA1921 8948 a19211
    Text: MCH4014 Ordering number : ENA1921 SANYO Semiconductors DATA SHEET MCH4014 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)


    Original     		PDF ENA1921 MCH4014 10GHz 020A-002 A1921-10/10 MCH4014 ENA1921 8948 a19211

    SC-82AB sot-343

    Abstract: ic not 4069 2SC5501A SC82AB sot-343
    Text: 2SC5501A Ordering number : ENA1061A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz)


    Original     		PDF ENA1061A 2SC5501A S21e2 500mW 250mm2 A1061-8/8 SC-82AB sot-343 ic not 4069 2SC5501A SC82AB sot-343

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz)


    Original     		PDF 2SC5501A ENA1061A 500mW A1061-8/8

    Untitled

    Abstract: No abstract text available
    Text: Rx5RW SERIES ULTRA SMALL PACKAGE VOLTAGE REGULATOR NO.EA-048-111020 OUTLINE The Rx5RW Series are CMOS-based voltage regulator ICs with high accuracy output voltage and ultra-low supply current developed. Each of these ICs consists of a driver transistor, a voltage reference unit, an error


    Original     		PDF EA-048-111020 SC-82AB SON1612-6, Room403, Room109,

    Untitled

    Abstract: No abstract text available
    Text: ULTRA SMALL PACKAGE VOLTAGE REGULATOR Rx5RW SERIES NO. EA-048-0311 OUTLINE The Rx5RW Series are CMOS-based voltage regulator ICs with high accuracy output voltage and ultra-low supply current developed. Each of these ICs consists of a driver transistor, a voltage reference unit, an error


    Original     		PDF EA-048-0311 SC-82AB SON1612-6, Rx5RW50B

    mje 3007

    Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
    Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)


    Original     		PDF ENA0389A MCH4009 25GHz A038915/15 mje 3007 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500

    SC-82AB

    Abstract: SON1612-6
    Text: Rx5RW SERIES ULTRA SMALL PACKAGE VOLTAGE REGULATOR NO.EA-048-100216 OUTLINE The Rx5RW Series are CMOS-based voltage regulator ICs with high accuracy output voltage and ultra-low supply current developed. Each of these ICs consists of a driver transistor, a voltage reference unit, an error


    Original     		PDF EA-048-100216 SC-82AB SON1612-6, Room403, Room109, 10F-1, SON1612-6