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    Keysight Technologies N9912C-10GHz

    RF Test Equipment FieldFox RF Analyzer w/cable and antenna, vector network, spectrum analyzer 10GHz
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    Mouser Electronics N9912C-10GHz 1
    • 1 $42173
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    ADLINK Technology Inc CPU Core i3-8100T 3.10GHz

    CPU - Central Processing Units CPU, Core i3-8100T, 3.10GHz, 4-Core, 6MB SmartCache, Coffee Lake, CM8068403377415 SR3Y8, Step:B0, MM# 963660
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    Mouser Electronics CPU Core i3-8100T 3.10GHz
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    ADLINK Technology Inc CPU Core i5-8500T 2.10GHz

    CPU - Central Processing Units CPU, Core i5-8500T, 2.10GHz, 6-Core, 9MB SmartCache, Coffee Lake, CM8068403362509 SR3XD, Step:U0, MM# 963592
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    Mouser Electronics CPU Core i5-8500T 2.10GHz
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    ADLINK Technology Inc Xeon E5-2620 V4 2.10GHz FCLGA2011-3

    CPU - Central Processing Units CPU, Xeon E5-2620 v4, 2.10GHz, 8-Core, 20MB SmartCache, Broadwell, CM8066002032201 SR2R6, Step:R0, MM# 948659
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    Mouser Electronics Xeon E5-2620 V4 2.10GHz FCLGA2011-3
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    ADLINK Technology Inc CPU Xeon Gold 5218R 2.10GHz

    CPU - Central Processing Units CPU, Xeon Gold 5218R, 2.10GHz, 20-Core, 27.5MB Cache, Cascade Lake, CD8069504446300 SRGZ7, Step:B1, MM# 999PKD
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    Mouser Electronics CPU Xeon Gold 5218R 2.10GHz
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    10GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-4000 Proposed 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses


    Original     		SUF-4000 15GHz 10GHz, 88mmx0 SUF-4000 10GHz. PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB


    Original     		RFHA1101D 10GHz 14GHz DS110630 PDF

    7039a

    Abstract: a1069
    Text: EC3H07BA Ordering number : ENA1069 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H07BA UHF to S Band Low-Noise Amplifier and OSC Applications Features • • • • • • Low noise : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=10GHz typ (VCE=1V).


    Original     		EC3H07BA ENA1069 10GHz S21e2 UL94HB) A1069-7/7 7039a a1069 PDF

    TUNABLE VCO 10GHZ

    Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
    Text: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a


    Original     		10GHz TUNABLE VCO 10GHZ MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer PDF

    LTC6409IUDB

    Abstract: LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB
    Text: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate


    Original     		LTC6409 10GHz 100MHz, 10-Lead 8dB/14dB/20dB/26dB LTC6401-20/LTC6401-26 LTC6406/LTC6405 70dBc/ 65dBc LTC6409IUDB LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB PDF

    SN62 PB36 ag2

    Abstract: MA4BN1840-1
    Text: MA4BN1840-1 V2 Monolithic HMIC Integrated Bias Network 18 – 40 GHz Chip Layout Features • • • • • Broad Bandwidth Specified from 18 to 40 GHz Useable from 10GHz to 50GHz Extremely Low Insertion Loss. High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated


    Original     		MA4BN1840-1 10GHz 50GHz MA4BN1840-1 SN62 PB36 ag2 PDF

    kf 8715

    Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E PDF

    LT5570

    Abstract: LTC5541 LT5579 LTC5540 LTC5543 LTC5542
    Text: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range FEATURES n n n n n n n n n DESCRIPTION Frequency Range: 40MHz to 10GHz Linear Dynamic Range: Up to 57dB Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms Exceptional Accuracy Over Temperature: ±0.5dB Typ


    Original     		LTC5582 40MHz 10GHz DFN10 26dBm, 190mA 14GHz, LT5570 LTC5541 LT5579 LTC5540 LTC5543 LTC5542 PDF

    CL05A

    Abstract: No abstract text available
    Text: CL Series Stackpole Electronics, Inc. Multilayer Chip Inductor Features: Resistive Product Solutions Provides tight tolerances and excellent Q values Tight physical dimension tolerances Stable inductance in high frequency circuits ~10GHz For inductance values outside those listed in the


    Original     		10GHz) CL05A PDF

    LEE-19

    Abstract: LEE-29 LEE-39 LEE-49 LEE-59
    Text: AMPLIFIERS Designer's Kit K1-LEE+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW EXPOSED METAL BOTTOM TOP VIEW DC to 8GHz LEE+ Features Wideband, 50Ω Up to +17.3dBm typ.output pwr. • Flat output power • Usability to 10GHz • • • •


    Original     		10GHz LEE-19+ 33dBm M100351 LEE-19 LEE-29 LEE-39 LEE-49 LEE-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFUV5945A RFUV5945A Low Noise MMIC VCO with Buffer Amplifier 10GHz to 16GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features            Integrated LPA Image Rejection Mixer LO Buffer Amplifier


    Original     		RFUV5945A RFUV5945A 10GHz 16GHz 32-Pin, DS110331 100nF 10000pF PDF

    DS110914

    Abstract: No abstract text available
    Text: RFRX1001 RFRX1001 10GHz to 15.4GHz GaAs MMIC 10GHz TO 15.4GHz GaAs MMIC IQ DOWNCONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm GND LOIN GND N/C Vd3 N/C 32 Features   RF Frequency=10GHz to 15.4GHz LO Frequency=6GHz to 19.4GHz  IF Frequency=DC to 4GHz


    Original     		RFRX1001 10GHz RFRX1001 32-Pin, 16dBm 15dBc 10Evaluation DS110914 PDF

    Untitled

    Abstract: No abstract text available
    Text: NLB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM


    Original     		NLB-300 NLB-300 10GHz 10GHz 14GHz 15GHz 20GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: NLB-300 Preliminary CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers


    Original     		NLB-300 NLB-300 10GHz 10GHz 14GHz 15GHz 20GHz PDF

    4N 7

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP INDUCTORS HIGH FREQUENCY PERFORMANCE MHI SERIES RoHS RESISTORS CAPACITORS COILS DELAY LINES L Term.W is RoHS compliant & 260°C compatible T t Wide range - 0.6nH to 470nH, up to 10GHz 420mA Advanced monolithic construction especially suited for high


    Original     		470nH, 10GHz 420mA MHI0201 10Kpcs/reel FA094A GF-061. 4N 7 PDF

    ha6007

    Abstract: No abstract text available
    Text: HBH 10.0 – 13.0 GHz Variable Gain Amplifier PRELIMINARY Microwave GmbH HA6007 General Description The HA6007 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier


    Original     		HA6007 HA6007 10GHz 13GHz. PDF

    Untitled

    Abstract: No abstract text available
    Text: SRF11B09-010-1 SRF11B09-010 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5371, REV - 8GHz to 10GHz Low Noise Amplifier Features •8 GHz to 10 GHz Frequency Range Typical Noise Figure < 1.2 dB Typical Gain 25 dB Gain Flatness < ± 1.5 dB


    Original     		SRF11B09-010-1 SRF11B09-010 10GHz SRF11B09-10 PDF

    zo 107

    Abstract: zo 107 MA ZO 109 zo 109 ma
    Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz


    Original     		TCCH-80+ 10GHz GU1041 2002/95/EC) zo 107 zo 107 MA ZO 109 zo 109 ma PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1922 MCH4016 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance


    Original     		ENA1922 MCH4016 10GHz, 10GHz A1922-10/10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1912 MCH4017 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=17dB typ (f=1GHz) Halogen free compliance


    Original     		ENA1912 MCH4017 100mA, 10GHz, 10GHz A1912-9/9 PDF

    2SC5540

    Abstract: TA-1682
    Text: Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions • High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ f=1GHz . · Low noise : NF=1.3dB typ (f=1GHz).


    Original     		ENN6280 2SC5540 10GHz S21e2 2SC5540] 2SC5540 TA-1682 PDF

    sanyo 103 490 0220

    Abstract: 2SC5646
    Text: Ordering number : ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier andOSC Applications Features • • unit : mm 2159 [2SC5646] 1.4 0.25 0.1 3 0.8 • Low-noise use : NF=1.5dB typ f=2GHz . High cut-off frequency : fT=10GHz typ (VCE=1V).


    Original     		ENN6606 2SC5646 2SC5646] 10GHz S21e2 sanyo 103 490 0220 2SC5646 PDF

    Untitled

    Abstract: No abstract text available
    Text: Micro Networks FREQUENCY SOURCES Micro Networks offers low jitter clock sources for use Key Features: in optical network OC-12, OC-48, & OC-192 , • Operating Frequencies 100MHz to >10GHz computer and instrumentation applications. • Fixed-frequency, Voltage Controlled (VCSO),


    OCR Scan     		OC-12, OC-48, OC-192) 100MHz 10GHz PDF

    2SC4873

    Abstract: IC 2703 TRANSISTOR 10GHZ TRANSISTOR FOR 10GHz oscillator IS21E
    Text: 2 S C 4 8 7 3 N PN Epitaxial Planar Silicon Transistor U H F ~ S Band low-noise amplifiers and oscillators T E N T A T I VE Features and Applications • Small noise figure: NF=1.4dB typ f=lGHz • High Power Gain : IS21e|* = 15dB typ (f=lGHz) • High cutoff frequency : fI = 10GHz typ


    OCR Scan     		2SC4873 IS21e| 10GHz 2SC4873 IC 2703 TRANSISTOR 10GHZ TRANSISTOR FOR 10GHz oscillator IS21E PDF