mark G1 SOT-23
Abstract: 2N5551 g1 2N5551 KST5551
Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KST5551
350mW
OT-23
2N5551
mark G1 SOT-23
2N5551 g1
KST5551
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486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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Untitled
Abstract: No abstract text available
Text: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings
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MMBT3646
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Mark ing CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT2369
C-120
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MARK "326" FET
Abstract: transistor 3669
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
05Electric
Oct2011
MARK "326" FET
transistor 3669
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MMBT2369
Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol
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MMBT2369
MMBT2369
100mA.
OT-23
MARK 1J
HIGH SPEED SWITCHING NPN SOT23
MMBT2369 SOT23
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transistor 21 2u
Abstract: EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor
Text: EMD38 Transistors General purpose transistor isolated transistors EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor
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EMD38
DTC114Y
DTA113Z
10k/47k
1k/10k
transistor 21 2u
EMD38
DTA113Z
DTC114Y
EMT6
d38 marking transistor
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Untitled
Abstract: No abstract text available
Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77
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US5L11
2SB1710
RB461F
85Max.
15Max.
US5L11
1000m
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DI210
Abstract: No abstract text available
Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77
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US5L11
2SB1710
RB461F
85Max.
15Max.
US5L11
DI210
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KSA1013
Abstract: No abstract text available
Text: KSA1013 PNP Epitaxial Silicon Transistor Features • Color TV Audio Output • Color TV Vertical Deflection Output 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1013YBU KSA1013OBU KSA1013YTA Bulk
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KSA1013
O-92L
KSA1013YBU
KSA1013OBU
KSA1013YTA
A1013
KSA1013OTA
KSA1013
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CBVK741B019
Abstract: F63TNR FDG6302P FFB3904 FFB3906 FFB3946 FMB3946 SC70-6 318 SC70-6
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose
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SC70-6
FFB3946
FMB3946
FFB3946
FFB3904
FFB3906
CBVK741B019
F63TNR
FDG6302P
FFB3904
FFB3906
FMB3946
SC70-6
318 SC70-6
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FFB3904
Abstract: FFB3906 FFB3946 FMB3946 SC70-6
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose
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SC70-6
FFB3946
FMB3946
FFB3946
FFB3904
FFB3906
FFB3904
FFB3906
FMB3946
SC70-6
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KSC1815YTA
Abstract: ksc1815
Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
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KSC1815
KSA1015
KSC1815YTA
KSC1815YTA
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mark ab SC70
Abstract: br mark
Text: E2 B2 Mark: .AB C2 TRANSISTOR TYPE C1 SC70-6 pin #1 Dot denotes pin #1 B1 E1 FFB3946 / FMB3946 FMB3946 FFB3946 C2 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 SuperSOTä-6 Mark: .002 pin #1 B1 E2 B2 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose
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FFB3946
FMB3946
FFB3946
SC70-6
FFB3904
FFB3906
100mA,
mark ab SC70
br mark
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Untitled
Abstract: No abstract text available
Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
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KSC1815
KSA1015
KSC1815YTA
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KSA1015YTA
Abstract: No abstract text available
Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1015GRTA
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KSA1015
KSC1815
KSA1015GRTA
KSA1015YTA
KSA1015YTA
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Untitled
Abstract: No abstract text available
Text: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L
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BC63916
BC63916
BC639-16
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CNZ1105
Abstract: ON1105
Text: Transmissive Photosensors Photo lnterrupters CNZ1105 (ON1105) Unit: mm Photo Interrupter 14.3±0.3 Mark for Indicating LED side Symbol Rating Unit VR 3 V IF 50 mA PD 75 mW Output (Photo Collector-emitter voltage (Base open) transistor) VCEO 30 V Emitter-collector voltage
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CNZ1105
ON1105)
PISTR104-007
CNZ1105
ON1105
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MMBT3646
Abstract: No abstract text available
Text: MMBT3646 MMBT3646 Switching Transistor 3 2 SOT-23 Mark: 23 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 15 Units V VCES Collector-Emitter Voltage 40 V VCBO
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MMBT3646
OT-23
MMBT3646
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD07MVS2
175MHz
520MHz
RD07MVS2-101
diode gp 434
RD07MVS1
RD07MVS2
T112
07MVS1
PO520
zener gp 434
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50
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HN1C07F
400mA
100mA
100mA,
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Untitled
Abstract: No abstract text available
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
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SC70-6 SSOT6
Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
SC70-6 SSOT6
SSOT-6
.318 SC70-6
ic 311 pdf datasheets
CBVK741B019
F63TNR
FDG6302P
FFB2222A
FFB2907A
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