Untitled
Abstract: No abstract text available
Text: EMB51 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter DTr1 and DTr2 VCC -50V IC(MAX.) -100mA R1 22kΩ EMB51 R2 22kΩ (SC-107C) EMT6 l Features 1) Two DTA024E chips in a EMT6 package.
|
Original
|
EMB51
-100mA
SC-107C)
DTA024E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EMD30 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -30V
|
Original
|
EMD30
100mA
SC-107C)
-200mA
DTC114E
DTB713Z
R1102A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EMD59 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD59 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>
|
Original
|
EMD59
100mA
SC-107C)
-100mA
DTA014Y
DTC014Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EMD53 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD53 R2 10kΩ (SC-107C) EMT6 <For DTr2(PNP)>
|
Original
|
EMD53
100mA
SC-107C)
-100mA
DTA014E
DTC014E
|
PDF
|
2SA20
Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
Text: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
|
Original
|
2SA2018
2SK3019
2SA20
"dual TRANSISTORs" resistance
dual audio circuit diagram
|
PDF
|
DTC144E
Abstract: EMF20 UMF20N
Text: EMF20/UMF20N Transistors Power management dual transistors EMF20/UMF20N 2SC4617and DTC144E are housed independently in a EMT6 or UMT6 package. zApplication Power management circuit zExternal dimensions (Units : mm) 0.22 zFeatures 1) Power switching circuit in a single package.
|
Original
|
EMF20/UMF20N
2SC4617and
DTC144E
EMF20
UMF20N
EMF20
UMF20N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Nch MOSFET EM6K7 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for
|
Original
|
R0039A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch + Nch MOSFET EM6K33 Structure ilicon N-channel MOSFET Dimensions Unit : mm Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33
|
Original
|
EM6K33
R1010A
|
PDF
|
vmt3
Abstract: EMT6 EMT3 T106 T148 1t2r
Text: Unit:mm Package Taping Spec Physical dimensions Type Taping dimensions Reel dimensions Basic ordering unit Plastic reel 1.2 0.8 0.2 (3) 0.8 (2) 0.4 0.4 1.2 0.32 0.2 T2L 8000 pcs/reel 0.13 0.5 0.22 (1) VMT3 B Label Plastic reel A A C B C VMT3 EMT6 1.6 1.6
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EMD5 / UMD5N Transistors General purpose dual digital transistors EMD5 / UMD5N zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (6) (2) 1.2 1.6 0.5 0.5 1.0 1.6 EMD5 (1) 0.5 0.13 zFeatures 1) Both the DTA143X chip and DTC144E chip in an EMT6 or UMT6 package.
|
Original
|
DTA143X
DTC144E
SC-88
both00
-500m
-200m
-100m
-100m
-500m
|
PDF
|
EM6K33
Abstract: No abstract text available
Text: 1.2V Drive Nch + Nch MOSFET EM6K33 Dimensions Unit : mm Structure ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33
|
Original
|
EM6K33
R1010A
EM6K33
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N zFeature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. zDimensions(Unit : mm) EMZ8 (6) (5) (4) zEquivalent circuits (1) (2) (3) ROHM : EMT6 EIAJ : (3) (2) Each lead has same dimensions
|
Original
|
2SA2018
2SC2412K
SC-88
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N !External dimensions (Units : mm) (5) (6) (5) 0.5 1.25 (6) 2.0 1.3 (3) (1) (6) (4) 0.65 UMZ8N (2) Tr1 0.65 (1) 0.2 Tr2 Each lead has same dimensions ROHM : EMT6 EIAJ : (4) (2) (1) (5)
|
Original
|
2SA2018
2SC2412K
SC-88
|
PDF
|
2SA2018
Abstract: DTC144EE EMF5
Text: EMF5 Transistors Power management dual transistors EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor !Equivalent circuits (3) (2) DTr2 ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2
|
Original
|
2SA2018
DTC144EE
EMF5
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating
|
Original
|
2SK3019
100mA)
|
PDF
|
2SA2018
Abstract: DTC123EE
Text: EMF4 Transistors Power management dual transistors EMF4 2SA2018 and DTC123EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions Abbreviated symbol：F4
|
Original
|
2SA2018
DTC123EE
|
PDF
|
EMT6
Abstract: diode marking U22
Text: TYPE PRODUCTS EMT6 PAGE EM6K7 1.TYPE EM6K7 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/4 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 IT IS THE SAME RATINGS FOR THE Tr1 AND Tr2. 》 DRAIN-SOURCE VOLTAGE VDSS ・・・ 20V GATE-SOURCE VOLTAGE
|
Original
|
200mA
400mA
PW10s
150mW
120mW
55150oC
TSQ03103H-EM6K7
TSZ2211105
EMT6
diode marking U22
|
PDF
|
DTC144E
Abstract: EMD28
Text: EMD28 Transistors General purpose transistor isolated transistors EMD28 DTB543X and DTC144E A are housed independently in a EMT6 package. zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) EMT6 zFeatures 1) DTr1 : PNP digital transistor
|
Original
|
EMD28
DTB543X
DTC144E
DTC144E
EMD28
|
PDF
|
DTC114E
Abstract: EMD30
Text: EMD30 Transistors General purpose transistor isolated transistors EMD30 DTB713Z and DTC114E A are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4) 1.6
|
Original
|
EMD30
DTB713Z
DTC114E
DTC114E
EMD30
|
PDF
|
2SD2696
Abstract: EMX28
Text: Low frequency transistor Complex 2-elements Bipolar Transistor EMX28 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package. Collector saturation voltage is low.
|
Original
|
EMX28
2SD2696
300mA
100mA
R0039A
EMX28
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm EMT6 Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
|
Original
|
R0039A
|
PDF
|
SMT6 T108
Abstract: No abstract text available
Text: EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 22kW 22kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH1 (SC-107C) UMH1N
|
Original
|
100mA
SC-107C)
OT-353
SC-88)
DTC124E
R1120A
SMT6 T108
|
PDF
|
EMH15
Abstract: marking h15
Text: EMH15 / IMH15A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT6 SMT6 (4) (6) 50V 100mA 47kW (5) (5) (6) (4) (1) (3) (2) (2) (3) (1) EMH15 (SC-107C) lFeatures IMH15A
|
Original
|
EMH15
IMH15A
100mA
EMH15
SC-107C)
IMH15A
OT-457
SC-74)
DTC144T
marking h15
|
PDF
|
MARKING H11
Abstract: No abstract text available
Text: EMH11 / UMH11N / IMH11A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 10kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH11 (SC-107C)
|
Original
|
EMH11
UMH11N
IMH11A
100mA
EMH11
SC-107C)
OT-353
SC-88)
MARKING H11
|
PDF
|
