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    TRANSISTOR K43 Search Results

    TRANSISTOR K43 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K43 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    k4368

    Abstract: BUK436-800A BUK436-800B K43680
    Text: N AMFR PHILIPS/DISCRETE b TE J> • bbsa^ai 0Q3Ü47Ü BU K436-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended lor use in Switched Mode Power Supplies SMPS , motor control, welding,


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    K436-800A/B BUK436 -800A -800B k4368 BUK436-800A BUK436-800B K43680 PDF

    Untitled

    Abstract: No abstract text available
    Text: bTE ]> N AMER P H IL IP S/ DI SC R ET E • bbS3T31 00 30 4 b 5 Product Specification Philips Semiconductors B U K436-200A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bbS3T31 K436-200A/B BUK436 -200A -200B BUK436-200A/B PDF

    k436w

    Abstract: 636 transistor sd 636 transistor
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    K436W-200A/B BUK436 -200A -200B OT429 T0247) BUK436W-200A/B k436w 636 transistor sd 636 transistor PDF

    k4368

    Abstract: No abstract text available
    Text: N AMFR P H IL IP S /D IS C R E T E b'lE D • b b S B 'm 0 0 3 0 4 7 Q flb? « A P X Product Specification Philips Semiconductors B U K436-800A/B Pow erM O S transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


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    K436-800A/B BUK436 -800A -800B BUK436-800A/B bbS3331 DD3D474 k4368 PDF

    BUK436-200B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL L5E D • 7110fl5b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    7110fl5b BUK436-200A/B BUK436 -200A -200B abfcBUK436-200A/B BUK436-200B PDF

    BUK437-500A

    Abstract: BUK437-500B buk437 S1216
    Text: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK437-500A BUK437-500B BUK437 -500A -500B M89-1142/RST BUK437-500A BUK437-500B S1216 PDF

    BUK436-200A

    Abstract: BUK436-200B MN1 transistor
    Text: PHILIPS INTERNATIONAL L5E D • 7110fl5b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    7110fl5b BUK436-200A/B BUK436 -200A -200B BUK436-200A BUK436-200B MN1 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0030500 3E4 • APX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bbS3T31 K438-800A/B BUK438 -800A -800B BUK438-800A/B PDF

    Transistor Bo 17

    Abstract: BUK436-100A BUK436-100B
    Text: PHILIPS INTERNATIONAL bSE D B 7110A2Li DOtiHaRb ^76 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    BUK436-100A/B -100A -100B Transistor Bo 17 BUK436-100A BUK436-100B PDF

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


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    SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 PDF

    MN1 transistor

    Abstract: BUK436-200B LTO 100 F BUK436-200A
    Text: PHILIPS INTER NAT IONAL L5 E D • 7 1 1 0 fl5 b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    7110fl5b BUK436-200A/B BUK436 -200A -200B 71106Eb MN1 transistor BUK436-200B LTO 100 F BUK436-200A PDF

    2SK520

    Abstract: transistor k43 2SK520 K44 2SK425 k41 transistor transistor k42 transistor k41 2SK520 K43 marking k42 mwk41
    Text: Junction Field Effect Transistor 2SK520 zt>nnitosikh^ > > * 9 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier 2S 520U K n . - 7- m f f l ? 4 7 ° k M + * ~ i - < n R F T > - f m & £ v r - - n i 7' PACKAGE DIMENSIONS Unit : mm)


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    tt2SK238, 2SK425# 2SK520 transistor k43 2SK520 K44 2SK425 k41 transistor transistor k42 transistor k41 2SK520 K43 marking k42 mwk41 PDF

    K438-1000A

    Abstract: BUK438-1000A BUK438-1000B k4381
    Text: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a


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    BUK438-1OOOA/B 711002b BUK438 -1000A -1000B BUK438-1000A/B 711062b T-39-I5 K438-1000A BUK438-1000A BUK438-1000B k4381 PDF

    RP112N321D

    Abstract: No abstract text available
    Text: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,


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    RP112x 150mA EA-258-131024 10kHz 100kHz. Room403, Room109, 10F-1, RP112N321D PDF

    BUK438-800A

    Abstract: BUK438-800B T0247
    Text: Product specification Philips Sem iconductors Pow erM O S tran sisto r G ENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    BUK438W-800A/B OT429 T0247) -800A -800B OT429 BUK438-800A BUK438-800B T0247 PDF

    BUK436W-1000B

    Abstract: T0247
    Text: Product specification Philips Sem iconductors Pow erM O S tran sisto r N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and


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    BUK436W-1000B OT429 TQ247) T0247) OT429 BUK436W-1000B T0247 PDF

    CD4093 ic 10 pin diagram

    Abstract: K4301 Velleman
    Text: PINK NOISE GENERATOR K4301 phone h a micro nce. it w r e s analy rforma pectrum udio system pe Add a s a ck your and che H4301IP-1 VELLEMAN NV Legen Heirweg 33 9890 Gavere Belgium Europe www.velleman.be www.velleman-kit.com Features & Specifications To analyse the acoustic properties of a room usually a living- room , a good pink noise generator together


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    K4301 H4301IP-1 20000Hz. 500KHz) 500KHz 100pF, 100mV B-9890 H4301IPâ CD4093 ic 10 pin diagram K4301 Velleman PDF

    RTL 602 W

    Abstract: IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002
    Text: ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! "#$%#!&"'! $*+*,*-(,! ! ./012341! (567893:! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! (;<),!


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    I/08/4! 65134B 086C3 9E73B 518D9' I5134! M0934N 58D2BD RTL 602 W IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002 PDF

    intel 945 motherboard schematic diagram

    Abstract: intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2
    Text: ORDER NO. CPD0111006C1 Personal Computer CF-07 This is the Service Manual for the following areas. M …for U.S.A. Model Number Reference The following models are numbered in accordance with the types of CPU and HDD etc. featured by product. Model No. CF-071 Z 2 ZY3 4


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    CPD0111006C1 CF-07 CF-071 intel 945 motherboard schematic diagram intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2 PDF

    transistor k702

    Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
    Text: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.


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    CPD0603076C0 CF-18 CF-18JHUZBZZ K1MN04B00073 K1KA07BA0014 C0EBH0000457 C1DB00001351 XP0431200L UNR9113J0L transistor k702 transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230 PDF

    BUK436-800A

    Abstract: BUK436-800B T0247
    Text: Product specification Philips Sem iconductors Pow erM O S tran sisto r G ENERAL DESCRIPTION N -channel enh an cem en t m ode field-effect pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies SM PS , m otor control, w elding,


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    BUK436W-800A/B OT429 T0247) -800A -800B OT429 BUK436-800A BUK436-800B T0247 PDF

    BUK436-200A

    Abstract: BUK436-200B T0247
    Text: Product Specification Philips Sem iconductors Pow erM O S tran sisto r G ENERAL DESCRIPTION N -channel enh an cem en t m ode field-effect pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies SM PS , m otor control, w elding,


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    BUK436W-200A/B OT429 T0247) -200A -200B OT429 BUK436-200A BUK436-200B T0247 PDF

    ilpi 215

    Abstract: C1 1OOUF ilc 150 eth transistor k41 brush dc motor control 200v 20a h-bridge igbt pwm k3900 82340 ilpi -115 transistor k42
    Text: □OB' PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses MOSFETs in the output stage while the


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    PWR-82340 PWR-82342 PWR-82342 PWR-82340/342 8234X ilpi 215 C1 1OOUF ilc 150 eth transistor k41 brush dc motor control 200v 20a h-bridge igbt pwm k3900 82340 ilpi -115 transistor k42 PDF