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    TRANSISTOR K 525 Search Results

    TRANSISTOR K 525 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 525 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ktA1271 Y

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C ᴌHigh hFE : hFE=100ᴕ320. A ᴌComplementary to KTC3203. N E K J MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC G D SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTA1271 KTC3203. ktA1271 Y

    KTA1271

    Abstract: KTC3203 Y KTC3203 ktc3203 transistor transistor ktc3203 ktC3203 y transistor KTA1271 transistor
    Text: SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C ᴌHigh hFE : hFE=100ᴕ320. A ᴌComplementary to KTC3203. N E K MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC G J D SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTA1271 KTC3203. KTA1271 KTC3203 Y KTC3203 ktc3203 transistor transistor ktc3203 ktC3203 y transistor KTA1271 transistor

    SD1492

    Abstract: M 208
    Text: SD1492 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1492 is a Common Emitter Device Designed for Class AB operation in UHF Amplifier Applications in Television Band IV & V Transmitters. PACKAGE STYLE .450 BAL FLG. A A FULL R TJ .050 NOM. G H I J K


    Original     		PDF SD1492 SD1492 M 208

    BUK7620-100A

    Abstract: 03nd56
    Text: D2 PA K BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7620-100A BUK7620-100A 03nd56

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK7620-100A N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK7620-100A

    TRANSISTOR BC 252

    Abstract: BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954
    Text: 7^5gS37 P05A771 G • ^ T ' 3 3 - 3 SGS-THOMSON B U V 56 s lü iO T K s K S S G S-THOMSON 3GE D FAST SWITCHING POWER TRANSISTOR ■ SUITABLE FOR SWITCH MODE POWER SUP­ PLY, UPS, DC AND AC MOTOR CONTROL DESC RIPTIO N High voltage, high speed transistor suited for use on


    OCR Scan     		PDF ppgfl771 BUV56 T-33-13 TRANSISTOR BC 252 BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954

    Untitled

    Abstract: No abstract text available
    Text: 2N5886 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N5886 is a Power Transistor for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 I.* ” .1 35 I MAX. MAXIMUM RATINGS lc 1 .1 V ,420 P diss II ,Q3»~ -^J-» .043 f? K* 200 W @ Tc = 25 °C


    OCR Scan     		PDF 2N5886 2N5886

    marking "l34"

    Abstract: No abstract text available
    Text: SILICON TRANSISTO R FA1A4P MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD F E A TU R E S P A C K A G I DIMENSIONS • in m illim eters Resistors B u ilt-in TYPE R t = 10 kÌ2 R2 = 4 7 k i2 • C om plem entary to FN 1A4P A B S O LU T E M A X IM U M R A T IN G S


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S


    OCR Scan     		PDF 2SK703

    NPN Transistor 2N3055

    Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
    Text: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525


    OCR Scan     		PDF 2N3055 O-204AA NPN Transistor 2N3055 transistor 2N3055 2N3055 J 2N3055 transistor k 525

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TO-3P (L)


    OCR Scan     		PDF 2SK3132

    TAG 92 transistor

    Abstract: philips transformer 524 BSS100 BSS100 TO92 BTB 134
    Text: 711Gû2ti 00tj7BflH Ô15 M P H I N Philips Semiconductors Data sheet status Product specification date of issue November 1990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K REFERENCE DATA Direct interface to C-MOS, TTL, etc.


    OCR Scan     		PDF 00b7Bfl4 BSS100 7110flEb Vdd-60V 7Z88773 TAG 92 transistor philips transformer 524 BSS100 BSS100 TO92 BTB 134

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3131 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS


    OCR Scan     		PDF 2SK3131

    LT 5251

    Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
    Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >


    OCR Scan     		PDF 02SD4711 cycleS50% LT 5251 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564

    Untitled

    Abstract: No abstract text available
    Text: 2N6306 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6306 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O - 3 k. I MAX. MAXIMUM RATINGS lc 8.0 A Ib 4.0 A V ce 250 V P diss 125 W @ Tc = 25 °C 3 MAX.


    OCR Scan     		PDF 2N6306 2N6306

    b1181

    Abstract: 2SD823 FN 1016 transistor fn 1016 JIS B1181 DDD3710 IS-313D
    Text: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" NPN 201 oa 00[]4,i3,i T ~ 33- K Epitaxial Planar Silico n Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage


    OCR Scan     		PDF 2SD823 7cH707Li QDD4c13ci B1181 B1252 2SD823 FN 1016 transistor fn 1016 JIS B1181 DDD3710 IS-313D

    2SK3132

    Abstract: K313 2SK313
    Text: T O S H IB A 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-3P (L) APPLICATIONS


    OCR Scan     		PDF 2SK3132 2SK3132 K313 2SK313

    2SK3131

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS


    OCR Scan     		PDF 2SK3131 2SK3131

    ST25C

    Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF 00DRS51 flBES100 VB-12SV ST25C st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI

    K3131

    Abstract: 2SK3131
    Text: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TO-3P (L)


    OCR Scan     		PDF 2SK3131 K3131 2SK3131

    Untitled

    Abstract: No abstract text available
    Text: m 2N6496 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6496 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 15 A lc V 110 V ce 140 W @ T C = 25 °C P diss -65 °C to +200 °C Tj


    OCR Scan     		PDF 2N6496 2N6496

    transistor BC 245

    Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time


    OCR Scan     		PDF 00DRS51 flBES100 T0126 15A3DIN transistor BC 245 transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126

    SK3132

    Abstract: k313 LM k313 2SK3132
    Text: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : RßS (ON) = 0.07 Ci (Typ.)


    OCR Scan     		PDF 2SK3132 SK3132 k313 LM k313 2SK3132

    Untitled

    Abstract: No abstract text available
    Text: 2N6052 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 12 A lc -100 V ce 150 W @ T C= 2 5 °C P diss -65 °C to +200 °C


    OCR Scan     		PDF 2N6052 2N6052