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    12A3 Search Results

    12A3 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    RJE7248812A3 Amphenol Communications Solutions Modular Jack - High Performance, Input Output Connectors 8P8C, Shield, With LEDs. Visit Amphenol Communications Solutions
    RJE7218812A3 Amphenol Communications Solutions Modular Jack - High Performance, Input Output Connectors 8P8C, Shield, With LEDs. Visit Amphenol Communications Solutions
    10127905-A12A30DLF Amphenol Communications Solutions HPCE VT Receptacle with enhanced walls 28P30S Visit Amphenol Communications Solutions
    RJE7B18812A3 Amphenol Communications Solutions Modular Jack - High Performance, Input Output Connectors 8P8C, CAT 6A, RA, Shield, with LEDs. Visit Amphenol Communications Solutions
    RJE7118812A3 Amphenol Communications Solutions Modular Jack - High Performance, Input Output Connectors 8P8C, Shield, With LEDs. Visit Amphenol Communications Solutions
    RJE7148812A3 Amphenol Communications Solutions Modular Jacks, Input Output Connectors, 8P8C, With Shield, With LEDs. Visit Amphenol Communications Solutions
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    12A3 Price and Stock

    TDK Epcos B32912A3104K000

    CAP FILM 0.1UF 10% 760VDC RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B32912A3104K000 Bulk 294,124 1
    • 1 $0.94
    • 10 $0.682
    • 100 $0.4859
    • 1000 $0.34233
    • 10000 $0.30675
    Buy Now
    TME B32912A3104K000 1,000
    • 1 -
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    • 100 -
    • 1000 $0.221
    • 10000 $0.221
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    JRH Electronics G1513A1212A3A

    CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey G1513A1212A3A Bulk 353 1
    • 1 $613.68
    • 10 $613.68
    • 100 $613.68
    • 1000 $613.68
    • 10000 $613.68
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    Advanced Thermal Solutions Inc ATS-12A-32-C1-R0

    HEATSINK 57.9X36.83X11.43MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATS-12A-32-C1-R0 Bulk 283 1
    • 1 $8.43
    • 10 $8.199
    • 100 $6.8326
    • 1000 $5.80775
    • 10000 $5.80775
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    JRH Electronics 370DS002B1612A3

    CONN BACKSHELL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 370DS002B1612A3 Bulk 43 1
    • 1 $759.3
    • 10 $759.3
    • 100 $759.3
    • 1000 $759.3
    • 10000 $759.3
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    JRH Electronics 390BS006B1812A3L

    CONN BACKSHELL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 390BS006B1812A3L Bulk 42 1
    • 1 $1323.25
    • 10 $1323.25
    • 100 $1323.25
    • 1000 $1323.25
    • 10000 $1323.25
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    12A3 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    12A-3 Inmet A ATTENUATOR Scan PDF
    12A-30 Inmet A ATTENUATOR Scan PDF
    12A304 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    12A308 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    12A-30F Inmet A ATTENUATOR Scan PDF
    12A-30M Inmet A ATTENUATOR Scan PDF
    12-A3A1 MTI-Milliren Technologies TCXO Original PDF
    12-A3B3 MTI-Milliren Technologies TCXO Original PDF
    12-A3C6 MTI-Milliren Technologies TCXO Original PDF
    12-A3D1 MTI-Milliren Technologies TCXO Original PDF
    12-A3E4 MTI-Milliren Technologies TCXO Original PDF
    12-A3E5 MTI-Milliren Technologies TCXO Original PDF
    12A-3F Inmet A ATTENUATOR Scan PDF
    12-A3F1 MTI-Milliren Technologies TCXO Original PDF
    12A-3M Inmet A ATTENUATOR Scan PDF

    12A3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode b3

    Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
    Text: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3


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    PDF 35-12A5 50-12A5 75-12A5 B3-12 75-12A3 75-12A3 B3-16 100-12A3 diode b3 MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 200-12A4 10-06A6

    diode 12A3

    Abstract: No abstract text available
    Text: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MDI100-12A3 60747and 20131206a diode 12A3

    diode 12A3

    Abstract: No abstract text available
    Text: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MID145-12A3 60747and 20131206a diode 12A3

    Untitled

    Abstract: No abstract text available
    Text: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MID100-12A3 60747and 20131206a

    Untitled

    Abstract: No abstract text available
    Text: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MID75-12A3 60747and 20131206a

    diode 12A3

    Abstract: No abstract text available
    Text: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MDI145-12A3 60747and 20131206a diode 12A3

    MII145-12A3

    Abstract: No abstract text available
    Text: MII145-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 160 A VCE(sat) = 2.2 V Phase leg Part number MII145-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


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    PDF MII145-12A3 60747and 20131206a MII145-12A3

    MII100

    Abstract: No abstract text available
    Text: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


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    PDF MII100-12A3 60747and 20131206a MII100

    Untitled

    Abstract: No abstract text available
    Text: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    PDF MDI75-12A3 60747and 20131206a

    MII75-12A3

    Abstract: No abstract text available
    Text: MII75-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 90 A VCE(sat) = 2.2 V Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


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    PDF MII75-12A3 60747and 20131206a MII75-12A3

    MT-8-15A06

    Abstract: DP 6 W DMT-8-12A05 Power transformers
    Text: Series 241 and DP 241 Power Transformers CHASSIS-TRAN Power Transformers Single 115V 241-3-10A1 241-4-10A11 241-5-10A21 241-6-10A31 241-7-10A41 241-8-10A51 241-3-12A2 241-4-12A12 241-5-12A22 241-6-12A32 241-7-12A42 241-8-12A52 241-3-16A3 241-4-16A13 241-5-16A23


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    PDF 241-3-10A1 241-4-10A11 241-5-10A21 241-6-10A31 241-7-10A41 241-8-10A51 241-3-12A2 241-4-12A12 241-5-12A22 241-6-12A32 MT-8-15A06 DP 6 W DMT-8-12A05 Power transformers

    R14 P1F

    Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
    Text: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A


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    PDF 32-Bit TLCS-900/H1 TMP92CF26AXBG TMP92CF26A TMP92CF26AXBG TMP92CF26A 228-pin R14 P1F N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12

    TA 4572 BP

    Abstract: 2171B 2600 corning la 7680 AD17 MPC8245 PC8245
    Text: Features • 300 MHz - 333 MHz To Be Confirmed-PC603e Processor Core Implementing the • • • • • • • • PowerPC Architecture 32-bit PCI Interface Operating at up to 66 MHz Memory Controller Offering SDRAM Support up to 133 MHz Operation, Support up to


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    PDF Confirmed-PC603e 32-bit 16550-compatible PC8245 PC603e 2171D PC8245 TA 4572 BP 2171B 2600 corning la 7680 AD17 MPC8245

    Loctite 576

    Abstract: No abstract text available
    Text: Order Number: MPC8245EC/D Rev. 0.4, 9/2001 Semiconductor Products Sector Advance Information MPC8245 Integrated Processor Hardware Specifications The MPC8245 combines a PowerPCTM 603e core microprocessor with a PCI bridge. The PCI support on the MPC8245 will allow system designers to rapidly design systems using peripherals already designed for


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    PDF MPC8245EC/D MPC8245 MPC8245EC/D Loctite 576

    6A4 mic DIODE

    Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE


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    PDF VR6800 VR8290 XW6800 XW6801 XW6802 XW7100 XW7101 XW7103 XW7200 XW7310 6A4 mic DIODE r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF R8202 R6803 C8207

    smd diode c539

    Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
    Text: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF


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    PDF S630/S670 BA60-00030A BA68-40005L BA70-00030A BA72-00063A BA73-00001A BA92-00073A 0404agrams smd diode c539 samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button

    SLB9635TT12

    Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F
    Text: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.


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    PDF BA41-00905A 220nF 12MHZ BAV99LT1 100nF MX25L4005AM2C-12G 15-A4 14-C2 14-C2 SLB9635TT12 SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 20B3 diode BA09-00009A B503 F

    oz960

    Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
    Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO


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    PDF MPC7450 oz960 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763

    ST T4 D560

    Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom


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    PDF YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4

    54B2

    Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


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    PDF RC410MD SB450 BA41-00615A RC410MD Sheet18. Sheet19. Sheet20 TP682 TP685 TP686 54B2 HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504

    7512a3

    Abstract: 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3
    Text: N P TIG B T Modules i • High Short Circuit SOA Capability I 1 ■ —II- I I MDI I VCES Type ■c ^CE *at Tc = 25°C A Tc = 80°C A V 37 52 73 25 38 50 80 ► Mil 100-12A3 ► MID 100-12A3 ► MDI 100-12A3 Package style Eon® typ. 125°C mJ Eoff ^thJC


    OCR Scan
    PDF 150-C I35-12A MWI50-12AS MWI75-12AS 75-12A3 100-12A3 7512a3 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3

    Untitled

    Abstract: No abstract text available
    Text: SN74ALVCH16863 18-BIT TRANSCEIVER WITH 3-STATE OUTPUTS SCES060A- DECEMBER 1995 - REVISED SEPTEMBER 1997 Member of the Texas Instruments Widebus Family DGG OR DL PACKAGE TOP VIEW EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process io e a b


    OCR Scan
    PDF SN74ALVCH16863 18-BIT SCES060A- MIL-STD-883, JESD17 300-mil

    2N4241

    Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan
    PDF NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S

    lt 8225

    Abstract: 24A100S sm 8012 15A9D 5A250S 12A150S 24A15 12A100S 12a12d 5A48S
    Text: JLIN-27-2003 10:14 PICO ELECTRONICS INC. 914 738 8225 P .03/09 -e r m SERIES A/SM SURFACE MOUNT and PLUG-IN Hi Reliability and Ultra-Miniature SERIES A: Low Profile 0.5" x 0.5" x 0.3” Height! .»up to U S Watts SERIES SM: Low Profile 0.5" x 0.5" x 0J40" Height! .„up to 125 Watts


    OCR Scan
    PDF JLIN-27-2003 com/dcdclow/pe621b JUN-27-2003 coni/dcdclow/pe631 lt 8225 24A100S sm 8012 15A9D 5A250S 12A150S 24A15 12A100S 12a12d 5A48S