BSN254
Abstract: BSN254A
Text: BSN254 BSN254A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTORS N-channel enhancement mode vertical D-MOS transistors in TO-92 variant envelope and designed for use as tine current interrupters in telephone sets and fo r application in relay, high-speed and
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BSN254
BSN254A
0D3b02b
BSN254
BSN254A
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BSS91
Abstract: to-18 dimensions
Text: 7110ß2Li D[]b7fi7ö Sil IPHIN BSS91 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode vertical D-MOS tran sisto r in a T O -18 envelope. Designed p rim a rily as a line c u rre n t in te rru p te r in telephone sets, it can also be applied in o th e r applica tio ns such as in relays,
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BSS91
BSS91
to-18 dimensions
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BS107A
Abstract: No abstract text available
Text: BS107A A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and
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BS107A
C03b0ai
7ZSS773
003b005
BS107A
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BST70A
Abstract: No abstract text available
Text: BST70A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channei enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low FiDSon • Direct interface to C-MOS, TTL, etc.
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BST70A
BST70A
7ZS1032
RDSonat25
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02p SMD TRANSISTOR
Abstract: No abstract text available
Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application
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bbS3131
BST82
175DSon
02p SMD TRANSISTOR
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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v709
Abstract: VN2410L transistor wz transistor 711
Text: 7 1 L ü ô 2 b D O bfiO S fl 3b3 • P H I N Philips Semiconductors VN2410L Data sheet status Product specification date of issue July 1993 N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES PINNING - TO-92 variant PIN • Low RDS on
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711002b
VN2410L
aTO-92
MBB073
711Dfl2t.
typi031
v709
VN2410L
transistor wz
transistor 711
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Untitled
Abstract: No abstract text available
Text: bb53T31 DD25bS3 ITfl H A P X N AMER PHILIPS/DISCRETE BST84 b?E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.
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bb53T31
DD25bS3
BST84
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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BSP108
Abstract: transistor marking ST4
Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended
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BSP108
OT223
BSP108
transistor marking ST4
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