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    TRANSISTOR IC 4A NPN SMD Search Results

    TRANSISTOR IC 4A NPN SMD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IC 4A NPN SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS10N1A, BDS10N1B O-276AA) BDS10N1B-JQRS

    NPN transistor 9418

    Abstract: 9418 transistor
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS10N1A, BDS10N1B O-276AA) BDS10N1B-JQRS NPN transistor 9418 9418 transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS12N1A, BDS12N1B O-276AA) BDS12N1B-JQRS

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS12N1A, BDS12N1B O-276AA) BDS12N1B-JQRS

    power transistor Ic 4A NPN smd

    Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1047A Type000 50MHz power transistor Ic 4A NPN smd transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD / BDS17SMD • High Voltage • Hermetic SMD1 TO-276AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16SMD BDS17SMD O-276AB) BDS16 BDS17

    IC 9550

    Abstract: TO276AA
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD05 / BDS17SMD05 • High Voltage • Hermetic SMD05 TO-276AA Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16SMD05 BDS17SMD05 SMD05 O-276AA) BDS16 BDS17 IC 9550 TO276AA

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD05 / BDS17SMD05 • High Voltage • Hermetic SMD05 TO-276AA Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16SMD05 BDS17SMD05 SMD05 O-276AA) BDS16 BDS17

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD / BDS17SMD • High Voltage • Hermetic SMD1 TO-276AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF BDS16SMD BDS17SMD O-276AB) BDS16 BDS17

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


    Original     		PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    2n3054 pnp

    Abstract: TO77 package 2N3411
    Text: Part number search for devices beginning "2N3054" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N3054


    Original     		PDF html/2N3054 2N3054" 2N3054 2N3054A 2N3054-JQR-B 2N3250" 2N3250 40MHz 2n3054 pnp TO77 package 2N3411

    power transistor Ic 4A datasheet NPN smd

    Abstract: FZT1049A 5a SMD Transistor
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1049A SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 VCEO = 30V. 5 Amp continuous current. +0.1 3.00-0.1 20 Amp pulse current. +0.15 1.65-0.15 Features +0.2 0.90-0.2


    Original     		PDF FZT1049A OT-223 100MHz power transistor Ic 4A datasheet NPN smd FZT1049A 5a SMD Transistor

    npn smd 3a

    Abstract: power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3


    Original     		PDF FZT1048A OT-223 50MHz npn smd 3a power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor

    2A 80v complementary transistor

    Abstract: No abstract text available
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 2N3741SMD" 2N3741SMD O276AB) 2A 80v complementary transistor

    FZT1047A

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1047A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 VCEO = 10V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3


    Original     		PDF FZT1047A OT-223 250mA 50MHz FZT1047A

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    transistor SMD n 03a

    Abstract: 2SC4598 SMD TRANSISTOR 12a
    Text: Transistors SMD Type NPN Triple Diffused Planar Silicon Transistor 2SC4598 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface mount type device making the following possible. Reduction in the number of manufacturing processes +0.1 1.27-0.1 +0.2 4.57-0.2 Small size of 2SC4598-applied equipment.


    Original     		PDF 2SC4598 O-263 2SC4598-applied transistor SMD n 03a 2SC4598 SMD TRANSISTOR 12a

    2SC4600

    Abstract: SMD npn TRANSISTOR 1a 200v
    Text: Transistors SMD Type NPN Triple Diffused Planar Silicon Transistor 2SC4600 TO-263 1 .2 7 -0+ 0.1.1 Features Unit: mm Surface mount type device making the following possible. +0.1 1.27-0.1 +0.2 4.57-0.2 Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment.


    Original     		PDF 2SC4600 O-263 2SC4600-applied 2SC4600 SMD npn TRANSISTOR 1a 200v

    philips power transistor bd139

    Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
    Text: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors


    Original     		PDF AN10405 philips power transistor bd139 bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd

    Untitled

    Abstract: No abstract text available
    Text: 2N6299SMD 2N6301SMD COMPLEMENTARY SILICON POWER TRANSISTORS MECHANICAL DATA Dimensions in mm inches 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 2 9 .6 9 .3 1 1 .5 1 1 .2 2N6301SMD - NPN TRANSISTOR 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4


    Original     		PDF 2N6299SMD 2N6301SMD 2N6301SMD

    2N3741

    Abstract: 2N3741SMD 2N3766SMD
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 100KHz 2N3741SMD 2N3766SMD

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


    Original     		PDF 2N3741 100KHz

    2N6299SMD

    Abstract: 2N6299SMD05 2N6301SMD 2N6301SMD05 SMD05 75W PNP TO276AA
    Text: 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 MECHANICAL DATA Dimensions in mm inches 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) COMPLEMENTARY SILICON POWER TRANSISTORS 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )


    Original     		PDF 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 2N6299SMD 2N6301SMD O-276AB) 2N6299SMD05 2N6301SMD05 SMD05 75W PNP TO276AA