MPC5602S
Abstract: e200z0h sram ecc xPC56XX MPC5604S motherboard service guide wVGA TFT LCD driver nexus 5001 MPC5606S eeprom emulation
Text: Color Indicator Bar/Volume no. 32-bit Microcontrollers Qorivva MPC560xS Family MCUs for instrument clusters Overview Applications The following development support is The Qorivva MPC560xS family is the latest • Instrument cluster now available: generation of 32-bit microcontrollers MCUs
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32-bit
MPC560xS
MPX560xS
MPC560XSFAMFS
MPC5602S
e200z0h
sram ecc
xPC56XX
MPC5604S
motherboard service guide
wVGA TFT LCD driver
nexus 5001
MPC5606S
eeprom emulation
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APA075
Abstract: CCGA FBGA-484 datasheet APA1000 APA150 APA300 APA450 APA600 APA750 FG256
Text: Product Brief TM ProASICPLUS Flash Family FPGAs Features and Benefits • High Capacity High Performance Routing Hierarchy Commercial and Industrial • • • • • • • 75,000 to 1 Million System Gates 27 k to 198 kbits of Two-Port SRAM 66 to 712 User I/Os
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32-Bit
5172161PB-16/10
APA075
CCGA
FBGA-484 datasheet
APA1000
APA150
APA300
APA450
APA600
APA750
FG256
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transistor power rating 5w
Abstract: 2SC2118
Text: 2 s c 2118 CON NPN EPITAXIAL PLANAR TRANSISTOR O 144~ 1 « * æ * * œ Recommended f o r Low V oltage ü ( 1 0~ 1 4V ) . ft x m m INDUSTRIAL APPLICATIONS 1 4 4 ~ 175MHz Band P o w e r A m p l i f i e r A p plica tion s Un i t : mm ¿9.39 MAX ° ttìÎ) 5 W ( M i n •) , i K 't t i m m
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2sc2118
175MHz
Voc-13
transistor power rating 5w
2SC2118
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Untitled
Abstract: No abstract text available
Text: b 2 M clfl2cl GD17121 MITSUBISHI RF POWER MODULE 31R • M57713 144-148MHz, 12.5V, 17W, SSB MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM - —II— PIN : P in @VCC! @VBB ®VCC 2 ©Po ®G N D : : : : : : RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY
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GD17121
M57713
144-148MHz,
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transistor 45 f 122 comparison
Abstract: 48 pin jungle ic TRANSISTOR comparison GUIDE transistor 45 f 122 Single Chip Microcomputers MN1880 MN194 hi-fi amplifier floppy disc driver ic high voltage transistor in color tv or monitor
Text: Contents Type Number List Application Block Diagrams 21 Video Applications . 23 V C R System. 23
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband
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Q0311b7
BFG34
MSB037
ON4497)
OT103.
CECC50
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ m C MP N T S blE D • 44475Û4 0 D D cl 7 b ö D2T AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip HEW LETT PACKARD Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz
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AT-00500
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transistor A726
Abstract: A726 TRANSISTOR ARRAY MA3046 A3018 MA3054 817 transistor MA726 a3045 AIA3018
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 138 75154 140 I39 9665, 9666, 9667, 9668 /^A726 16 IN A I IN b [ IN C [ T? °UT * I^ IN D [ IN E I IN F [ IN G [ GND [ J OUT C OUT D I* > Lw> kx* U j E2 OUT B ^ OUT E j OUT F ^ OUT G COM Miniclip N ot S how n I43
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AIA3018,
MA3018A
MA3036
MA3045,
mA3046,
MA3086
MA3054
mA3019
mA3026
mA3036
transistor A726
A726
TRANSISTOR ARRAY
MA3046
A3018
MA3054
817 transistor
MA726
a3045
AIA3018
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz
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l4475fl4
AT-60585
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2SC2340
Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers
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L427414
r-33-0S
NE568
NE56800
operate-69
2SC2340
MR 6500
BM74
2SC2339
NE56800
NE56803
NE56853
NE56854
NE56857
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75150
Abstract: MA3019 A726 darlington pair transistor 147 B transistor MA3046 Transistor Array a3045 MA739 50 5G
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 147 MA3019 146 mA3039 l+ p l r t [*i t 1 9 11 12 10 *• 9 SUBSTRATE 148 150 MA1489, mA1489A 149 MA1488 mA739 VCC+ [14 IN A £ 3 VCC ^ IN D 13 RESPONSE pCONTROL A IN D1 10 IN C1 ^ IN C OUT B £ 7 GND^ ■^i RESPONSE
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mA3039
MA3019
MA739
MA1488
MA1489,
mA1489A
mA3019
mA3026
mA3036
A3039
75150
A726
darlington pair transistor
147 B transistor
MA3046
Transistor Array
a3045
MA739
50 5G
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz
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AT-00570
AT-00570
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Untitled
Abstract: No abstract text available
Text: AVANTEK 2GE INC 0A V A N TEK lim itit i o o o tsn T D AT-60585 Up to 6 GHz Low Noise ' Silicon Bipolar Transistor A vantek 85 Plastic Package Features • • Low Bias C u rren t O peration Low N o ise Figure: 1.4 dB typ ical at 1.0 G Hz 1.9 dB typ ical at 2.0 G Hz
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AT-60585
AT-60585
T-31-19
310-371-8717or310-371-8478
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STP36N
TP36N05LFI
STP36N06L
STP36N06LFI
STP36N06L/FI
ISQWATT220
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B1316
Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Text: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •
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2SB1316F5
SC-63)
B1316
2SB1316F5
DIODE B1316
B-1316
PACKAGE MARKING f5
transistor 2SB
B131-6
DIODE 2FL
2fl marking diode
2fl marking
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2sk2385
Abstract: PH 36A 2SK238
Text: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2
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2SK2385
22mil
P10ms*
2sk2385
PH 36A
2SK238
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Untitled
Abstract: No abstract text available
Text: WJ-A41-1 /SMA41-1 • 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ■ » ■ ■ il l AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH OUTPUT LEVEL: +19.0 dBm TYP. LOW NOISE: 3.5 dB (TYP.) Outline Drawings A41-1 Specifications'* Characteristics 0.200
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WJ-A41-1
/SMA41-1
A41-1
50-ohm
J-CA41-1
J-A41-1
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Untitled
Abstract: No abstract text available
Text: WJ-EA54 10 to 250 MHz TO-5 CASCADABLE AMPLIFIER ♦ TWO STAGES: 27 dB GAIN TYP. ♦ LOW VSWR: 1.2:1 (TYP.) ♦ VERY SMALL SIZE: TO-5 PACKAGE. Specifications * Outline Drawings Typical Characteristics Guaranteed 0° to 50°C -54° to +85°C EA54 .360 ± .002
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WJ-EA54
50-ohm
0DD7211
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Untitled
Abstract: No abstract text available
Text: M ITSUBISHI R F POW ER MODULE M 57737 1 4 4 — 1 4 8 M H z , 2 5 W , FM FOR M O B ILE RAD IO A P P LIC A TIO N DESCRIPTION M 57737 O U TLIN E DRAWING is a thick film D irn t'i.s .o n s m RF power module specifically designed for 144 ~ 14 8 M H z, 25W FM mobile radios.
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Untitled
Abstract: No abstract text available
Text: World Leader in ASICs • GEC P lessey Semiconductors GPS has one of the w idest ranges of state-of-the-art technologies in the world. Add global manufacturing, design and customer service centres, and you can see why we deliver fast and cost effective solutions
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I160M
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8020S/AS DUAL VOLTAGE SENSOR The TA8020S, TA8020AS is an 1C designed fo r lamp failure detection. W h e n a lamp failure occurs, it detects th e resulting lamp current change from th e voltage across th e detection resistor R j.
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TA8020S/AS
TA8020S,
TA8020AS
TA8020S
TA8020AS
200ms
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WJ-PA38-2
Abstract: No abstract text available
Text: WJ-PA38-2 / SMPA38-2 200 to 2600 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 200-2800 MHz TYP. HIGH OUTPUT LEVEL: +23.5 dBm (TYP.) GaAs FET AMPLIFIER HIGH THIRD ORDER INTERCEPT POINT: +33 dBm (TYP) Outline Drawings
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WJ-PA38-2
SMPA38-2
PA38-2
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Untitled
Abstract: No abstract text available
Text: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K2 38 5 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3
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2SK2385
22mf2
20kf2)
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