2N2484
Abstract: CECC50002-129 J 2N2484
Text: 2N2484 LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTION The 2N2484 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Products approved to CECC50002-129 available on request.
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2N2484
2N2484
CECC50002-129
J 2N2484
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JIS-C-7022
Abstract: 2-1-16EIAJAB-6201 ic 353 JIS-C-7032 OKI g3 gs lead free EIAJ ED-4701 305 6201 xr MOS1-4-14 CCD MTBF JIS-C-7021
Text: J2S0001-27-Y4 作成：1998年 1月 前回作成：1996年 10月 まえがき 平素は沖半導体製品を御愛顧いただき、厚く御礼申し上げます。 急速な発展を遂げているエレクトロニクス産業におきまして、半導体製品の応用
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J2S0001-27-Y4
J2S0002-27-Y3
J2S0003-27-Y3
ISO9002
Z81151981
GL-31
GL-32
JIS-C-7022
2-1-16EIAJAB-6201
ic 353
JIS-C-7032
OKI g3 gs lead free
EIAJ ED-4701 305
6201 xr
MOS1-4-14
CCD MTBF
JIS-C-7021
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AB-6201
Abstract: EIAJ ED-4701-1 EDX-4702 JIS-C-7032 EIAJ ED-4701 B-131 a 19946 EIAJ AB-6201 EIAJ ED-4701 A-132
Text: 第２章 半導体集積回路の信頼性 本文書は全 3 章にて構成される品質保証･信頼性ハンドブックの 第 2 章-（4）の部分となります。 目次 第２章 半導体集積回路の信頼性 1. 2. 3. 4. 半導体集積回路の信頼性 .
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p351987
p991041989
p11141990
CECC50000
CECC90000
EIAJED-4701
MILSTD-883
AB-6201
EIAJ ED-4701-1
EDX-4702
JIS-C-7032
EIAJ ED-4701 B-131
a 19946
EIAJ AB-6201
EIAJ ED-4701 A-132
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IN829A
Abstract: 55C3V3 55C2V7 IN827a 85C3V3 IN4575A IN4569A IN4578 IN4579 IN939
Text: THO M SO N MIL ET S P A T I A U X SSE D • T G E b 6 7 2 0 0 0 0 4 6 b 3 7 e « T H C M DISCRETE COMPONENTS PRODUCT DESCRIPTION O o S According CECC500 According t ESA/SCC5C o <z> PACKAGE ZENER DIODES BZX 55C2V7 to BZX 55C3VO BZX 55C3V3 to BZX 55C91 BZX 85C2V7
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102bB72
000046b
CECC500<
55C2V7
55C3V0
55C3V3
55C91
85C2V7
85C3V0
85C3V3
IN829A
IN827a
IN4575A
IN4569A
IN4578
IN4579
IN939
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bzx55
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE D m J ^53*131 002bflQ2 M'IS * A P X _ bZ X 55 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range of nominal working voltages from 2,4 V to 75 V
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002bflQ2
DO-35
kept33
BZX55
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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BUS12
Abstract: BUS12A max 1988 TO3 philips
Text: N AMER PHI L I P S / D I S C R E T E b t ^ T B l 0010717 JU i l l 3 • BUS12 BUS12A SSE D I T - 3 3 - / J SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a TO -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.
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T-33-/J
BUS12
BUS12A
BUS12
BUS12A
max 1988
TO3 philips
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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6822 TRANSISTOR equivalent
Abstract: transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 w1a 02 transistor transistors 6822 CECC50000 cecc00200
Text: BRITISH STAND ARD S INSTITUTION 2, PARK STREET. LONDON, W1A 2BS BS CECC 50 004-042 Specification available from:— AS SH O W N IN PD 9 0 0 2 , and CECC 0 0 2 0 0 S EM E L A B MANUFACTURING LTD. COVENTRY ROAD. LU T T E R W O R T H , L E I C E S T E R S H I R E .
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2N3055
6822 TRANSISTOR equivalent
transistor T009
transistor W1A 93
TRANSISTOR NPN 6822
TRANSISTOR 434
transistor w1a 84
w1a 02 transistor
transistors 6822
CECC50000
cecc00200
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SS TRANSISTOR
Abstract: BF751 t-31-21
Text: Product specification Philips Semiconductors NPN 6.5 GHz wideband transistor P H ILIP S IN T E R N A T IO N A L £ BF751 S b E D H 711D A E L . 004M R a bT T OWÊt P H IN PINNING FEATURES DESCRIPTION • High power gain PIN • Low noise figure 1 • Gold metallization ensures
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BF751
711DflSb
004MRab
BF751
MSB033
MBB479
7110flgb
SS TRANSISTOR
t-31-21
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband
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Q0311b7
BFG34
MSB037
ON4497)
OT103.
CECC50
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c3v6
Abstract: No abstract text available
Text: B ZX 55 SERIES J V VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range o f nominal working voltages from 2,4 V to 75 V with a tolerance of ± 5% international standard E24 .
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DO-35
DO-35
OD-27)
BZX55
17S0111
c3v6
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Untitled
Abstract: No abstract text available
Text: 3Q E D Z S G S -T H O M S O N rZ ^ 7# • 7^21537 00313^ 3 ■ ^ ¿ M O , - [fôQD [Rj ô [l[L[lCT[^(Q)ÎMlD(OS_ 2 N 2 4 8 4 S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N2484 is a silicon planar epitaxial NPN tran
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2N2484
CECC50002-129
QQ31131
T-31-19
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CECC50 005
Abstract: CECC50 005-005 BZX55 CECC50 005 005 c2v4 c2v7 c47 surge c3v3
Text: N AMER PHILIPS/DISCRETE _ bTE D • J bbSB'lBl 002bflQ2 4^S ■ APX bZX55 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range of nominal working voltages from 2,4 V to 75 V
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002bflG2
DO-35
DO-35
OD-27)
7Z59230
CECC50 005
CECC50 005-005
BZX55
CECC50 005 005
c2v4
c2v7
c47 surge
c3v3
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CECC50002-129
Abstract: 2N2484
Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N2484 LOW-LEVEL, LOW -NOISE AMPLIFIERS D E S C R IP T IO N The 2N2484 is a silicon planar epitaxial NPN tran sistor in Jedec TO-18 metal case. It is designed for use in high-performance, low-noise amplifier circuits
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2N2484
CECC50002-129
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE hfaSB^l 0Q1A717 3 • 2SE D BUS12 BUS12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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0Q1A717
BUS12
BUS12A
bbS3l31
0Q1S723
Q0167S4
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Untitled
Abstract: No abstract text available
Text: TVS Module Screening TEL: 805-498-2111 Semtech has DESC-EQT laboratory suitability status for performance of qualification, quality conformance, and screen testing of semiconductors products. Semtech maintains total in-house capabilities to support testing
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MIL-S-19500
CECC50000
MIL-STD-750,
MIL-STD-883,
MIL-STD-202,
JEDECSTD-22,
CECC50000.
MIL-STD-750
1500G,
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Mullard Mullard quick reference guide
Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)
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BZX91
1N825
1N827
1N829
1N914
1N916
1N4001G,
CV7367
1N4002G,
CV7756
Mullard Mullard quick reference guide
CV7476
CV7143
CV8805
BZV46
CV 7476 mullard
CV7099
CV7100 diode
mullard germanium
BYW 64 bridge rectifier
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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C6V2 ST
Abstract: ST C6V8 C5V1 ST BZV85 c5v6 st C9V1 ST ScansUX7 C4V3 ST IEC134 C4V7 ST
Text: SbE D • 711QöBti O Q H O ? 6^ P H I LI P S I N T E R N A T I O N A L 12Ö M P H I N BZV85 SERIES SbE D VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended for stabilization purposes. The series covers the normalized E24 ± 5% range of nominal working voltages
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7110a2t
QQ407eH
BZV85
DO-41
DO-41
OD-66)
711005b
7Z82194
C6V2 ST
ST C6V8
C5V1 ST
c5v6 st
C9V1 ST
ScansUX7
C4V3 ST
IEC134
C4V7 ST
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BF967
Abstract: 60J2
Text: BF967, N AMER PHILIPS/DISCRETE ObE D • 1^53^31 0015356 b r-3iHC SiLICON PLANAR TRANSISTOR P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier in u.h.f. television tuners. QUICK REFERENCE DATA Collector-base voltage open emitter
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BF967.
001232a
OT-37.
800MHz
BF967
60J2
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