Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BD 140 18 Search Results

    TRANSISTOR BD 140 18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 140 18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


    Original
    PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011M140 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original
    PDF IB1011M140 IB1011M140 IB1011M140-REV-NC-DS-REV-NC

    BD 140 transistor

    Abstract: MMJT9435 MOTOROLA TRANSISTOR motorola bjt
    Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc


    Original
    PDF MMJT9435/D MMJT9435 BD 140 transistor MMJT9435 MOTOROLA TRANSISTOR motorola bjt

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF586 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS "!#1 • Silicon NPN, TO-39 packaged VHF/UHF Transistor • Ft = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, • •


    Original
    PDF MRF586 300MHz, 234567897ABC MRF586 16D97B

    ACT361US-T

    Abstract: FSCR ic 230v dc 8a rectifier diode
    Text: ACT361 Rev 8, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator The ACT361 ensures safe operation with complete protection against all fault conditions. Built-in protection circuitry is provided for output shortcircuit, output over-voltage, line under-voltage, and


    Original
    PDF ACT361 14-Nov-12 ACT361 ACT361US-T FSCR ic 230v dc 8a rectifier diode

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 1 1 • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz


    Original
    PDF MRF544 234567897ABC 16D97B

    PTH8L14ar3r3m

    Abstract: PTH60 PTH8L PTH63 PTH8L04AR130H2B550 TRANSISTOR BC 553 transistor BD 110 PTH8L07 PTH8L09AR250H8B590 PTH61
    Text: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


    Original
    PDF CG01-J PTH8L14ar3r3m PTH60 PTH8L PTH63 PTH8L04AR130H2B550 TRANSISTOR BC 553 transistor BD 110 PTH8L07 PTH8L09AR250H8B590 PTH61

    transistor BD 522

    Abstract: PTH61H01AR220M140 PTH62 PTH60 transistor BD 110 PTH63 PTH8L07BD220N3B550 PTH8L07T102M2A550 PTH623H02AR270M265 PTH62H02AR180M265
    Text: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


    Original
    PDF CG01-H transistor BD 522 PTH61H01AR220M140 PTH62 PTH60 transistor BD 110 PTH63 PTH8L07BD220N3B550 PTH8L07T102M2A550 PTH623H02AR270M265 PTH62H02AR180M265

    transistor BD 110

    Abstract: BA 553 Thermistor PTC 265V PTH60
    Text: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


    Original
    PDF CG01-I transistor BD 110 BA 553 Thermistor PTC 265V PTH60

    BD 676

    Abstract: BD33KA5WFP BD00KA5WF BD00KA5WFP BD15KA5WFP
    Text: Secondary LDO Regulator Series for Local Power Supplies 500mA Secondary LDO Regulators for Local Power Supplies BD□□KA5,BD□□KA5W Series,BD00KA5W Series No.09024EAT01 ●General Description The BD□□KA5 series are low-saturation regulators that are available for output currents up to 500mA. The output voltage


    Original
    PDF 500mA BD00KA5W 09024EAT01 500mA. R0039A BD 676 BD33KA5WFP BD00KA5WF BD00KA5WFP BD15KA5WFP

    PTGL09BD3R3N2B51B0

    Abstract: pth resistor pth posistor pTH murata Murata PTH
    Text: R90E6.pdf 04.3.1 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF catalog


    Original
    PDF R90E6 24/32V DC24V PTGL09BD3R3N2B51B0 pth resistor pth posistor pTH murata Murata PTH

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD2731M140 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD2731M140 is designed for S-Band radar applications operating over the 2.7 – 3.1 GHz instantaneous


    Original
    PDF ILD2731M140 ILD2731M140 300us ILD2731M140-REV-NC-DS-REV-A

    TRANSISTOR BC 136

    Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
    Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


    OCR Scan
    PDF T-33-17 DIN125A 15A3DIN TRANSISTOR BC 136 transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan
    PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    transistor BD 110

    Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
    Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


    OCR Scan
    PDF fl235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 110 0437 Q62902-B62 transistor BD 524

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


    OCR Scan
    PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


    OCR Scan
    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    V3H-15V

    Abstract: SDA3002
    Text: SDA 3002 TV PLL for 62.5 kHz Resolution Preliminary data Bipolar 1C Type Ordering code Package SDA 3002 Q 67000-A 2267 DIP 18 Combined with a VCO tuner and a fast divider (dividing ratio 1 :64), the ASBC technology com ponent form s a digitally program mable phase-locked loop for television sets with


    OCR Scan
    PDF Q67000-A2267 V3H-15V SDA3002

    transistor BD 540

    Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
    Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches


    OCR Scan
    PDF 609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108

    zt158

    Abstract: BD 149 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


    OCR Scan
    PDF IS22I MRF20030 zt158 BD 149 transistor

    PTH60G30BD150N

    Abstract: PTH62H02AR180M265 PTH59F PTH61
    Text: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage


    OCR Scan
    PDF PTH9M/59F PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 PTH59F04D222TS TS-10 PTH59F 176-194F PTH60G30BD150N PTH62H02AR180M265 PTH59F PTH61

    8 pin ic 3773

    Abstract: No abstract text available
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


    OCR Scan
    PDF E3B33c 000DQ5M lo-32 8 pin ic 3773

    transistor Amp 3055

    Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@


    OCR Scan
    PDF 625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055

    603 transistor npn

    Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type


    OCR Scan
    PDF 000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906