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    BLUETTI AC300+B300-US

    3072Wh / 3000W - 6000W Surge
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    DigiKey AC300+B300-US 660 1
    • 1 $2487.5
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    BLUETTI AC300-US-BK-BL-00

    3000W - 6000W Surge
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AC300-US-BK-BL-00 659 1
    • 1 $981.6
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    StarTech ST7300USBME

    7 PORT INDUSTRIAL USB 3.0 HUB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ST7300USBME 230 1
    • 1 $155.89
    • 10 $150.326
    • 100 $144.7582
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    StarTech ST7300USB3B

    7 PORT USB 3.0 HUB W/ ADAPTER
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    DigiKey ST7300USB3B 72 1
    • 1 $79.51
    • 10 $74.207
    • 100 $68.9062
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    StarTech ST4300USB3

    4 PORT BLACK SUPERSPEED USB 3.0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ST4300USB3 Box 23 1
    • 1 $66.31
    • 10 $60.46
    • 100 $58.5092
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    300US Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) mAdc400

    Untitled

    Abstract: No abstract text available
    Text: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%


    Original     		PDF MMBTA05 MMBTA06 OT-23 MMBTA05 MMBTA06

    EAR99

    Abstract: MAGX-002731-180L00
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V1 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us, 500us, MAGX-002731-180L00

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1214M60 Preliminary TECHNOLOGIES, INC. 60W L-Band Radar LDMOS Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1214M60 is designed for the frequency band 1215-1400 MHz. Operating at 300us-10% pulse


    Original     		PDF ILD1214M60 ILD1214M60 300us-10% ILD1214M60-REV-PR1-DS-REV-NC

    HEMT 36 ghz transistor

    Abstract: No abstract text available
    Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 HEMT 36 ghz transistor

    Untitled

    Abstract: No abstract text available
    Text: 1.5 4 5 IN IN IN IN IN IN IN IN IN 5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G T L , LEAD TEMPERATURE 60 HE RESISTIVE OR INDUCTIVE LOAD T A , LEAD TEMPERATURE 0.375" 9.5mm LEAD LENGTH INSTANTANEOUS FORWARD CURRENT,(A) 50 10 75 1.0 0.1 Tj=25 C Pulse Width 300us


    Original     		PDF 5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G 300us

    5KE440CA

    Abstract: No abstract text available
    Text: RATINGS AND CHRACTERISTIC CURVES 1.5KE6.8 THRU 1.5KE440CA FIG. 11 - INSTANTANEOUS FORWARD VOLTAGE CHARACTERISTIS CURVE FIG. 12 - BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT CURVE ⊙ V - TEMPERATURE COEFFICIENT -mv/℃ ℃ 100 FORWARD CURRENT 10 PULSE WIDTH=300US


    Original     		PDF 5KE440CA 300US 5KE440CA

    1GM sot-23

    Abstract: MMBTA05 MMBTA06
    Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%


    Original     		PDF MMBTA05 MMBTA06 OT-23 MMBTA05 MMBTA06 1GM sot-23

    GaN hemt

    Abstract: Gan hemt transistor
    Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features •       GaN depletion mode HEMT microwave transistor Common source configuration


    Original     		PDF MAGX-002735-040L00 300us MAGX-002735-040L00 GaN hemt Gan hemt transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBTA55 MMBTA56 Driver PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - (3) MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle <


    Original     		PDF MMBTA55 MMBTA56 OT-23 MMBTA55 MMBTA56

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AW 3 * “G” Lead Pb -Free 1 2 SOT-323(SC-70) VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) Sa400

    Untitled

    Abstract: No abstract text available
    Text: NOTE 1 (NOTE 2) NOTES: 1.Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length, P.C.B mounted 2.Measured at1.0MHz and applied reverse voltage of 4.0V INSTANTANEOUS FORWARD CURRENT,(A) 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle


    Original     		PDF 300us

    Untitled

    Abstract: No abstract text available
    Text: INSTANTANEOUS FORWARD CURRENT, A 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 1.3 1.5


    Original     		PDF 300us

    MAGX-003135-120L00

    Abstract: 003135 EAR99
    Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Preliminary 28 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 003135

    Untitled

    Abstract: No abstract text available
    Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00

    MMBT2222

    Abstract: MMBT2222A MMBT2222AW
    Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) OT-23 MMBT2222 MMBT2222A

    1GM sot-23

    Abstract: MMBTA05 MMBTA06
    Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity


    Original     		PDF MMBTA05 MMBTA06 OT-23 MMBTA05 MMBTA06 1GM sot-23

    Untitled

    Abstract: No abstract text available
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us,

    Untitled

    Abstract: No abstract text available
    Text: 125 NOTE 1 j Storage temperature range stg NOTES: 1.Measured at1.0MHz and applied reverse voltage of 4.0V -65 to +150 INSTANTANEOUS FORWARD CURRENT,(A) 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 FORWARD VOLTAGE,(V) 1.3 1.5


    Original     		PDF 300us

    EAR99

    Abstract: HEMT 36 ghz transistor
    Text: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-180L00 300us EAR99 MAGX-003135-180L00 HEMT 36 ghz transistor

    Untitled

    Abstract: No abstract text available
    Text: SF31 - SF38 CREAT BY ART Pb 3.0AMPS. Super Fast Rectifiers DO-201AD RoHS COMPLIANCE Features — High efficiency, low VF — High current capability — High reliability — High surge current capability — Low power loss — For use in low voltage, high frequency inventor,


    Original     		PDF DO-201AD MIL-STD-202, 300us

    SMC MARKING Sk

    Abstract: SK520C
    Text: SK52C - SK520C CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place — High surge current capability


    Original     		PDF SK52C SK520C SMC/DO-214AB J-STD-020D, RS-481 SMC MARKING Sk SK520C

    ues704

    Abstract: No abstract text available
    Text: RECTIFIERS UES704 UES705 UES706 UES704HR UES705HR UES706HR High Efficiency, 20A FEATU RES DESCRIPTIO N • • • • • • The UES704 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.


    OCR Scan     		PDF UES704 UES705 UES706 UES704HR UES705HR UES706HR 50nSec) UES704,

    27 Mhz power amplifier

    Abstract: No abstract text available
    Text: TOSHIBA {DIS CR ETE/ OP TO} 909725 0 T OS HIB A Sb DE I TOITSSO □00745b =1 DISCRETE/OPTO -6 7 SILICON NPN E PIT A X IA L PLANAR TYPE Unit in mm 27 MHz POWER AMPLIFIER APPLICATIONS. 10.S MAX., 0 3 . 6 ÍQ . 3 FEATURES: • Reconnnended for Output Stage Application of


    OCR Scan     		PDF 00745b 150EL 27 Mhz power amplifier