TRANSISTOR B27 Search Results

TRANSISTOR B27 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR B27 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BLX95 Abstract: BB313 L1042 blx95a TRIMMER capacitor 10-40 pf D45 TRANSISTOR philips 2222 trimmer IEC134 Miniature Ceramic Plate Capacitors 2222 philips 15Kg-cm Text: » • bbsa'm oas'ìbHi dhs N AMER PHILIPS/DISCRETE IAPX BLX95 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is	OCR Scan	BLX95 BLX95 BB313 L1042 blx95a TRIMMER capacitor 10-40 pf D45 TRANSISTOR philips 2222 trimmer IEC134 Miniature Ceramic Plate Capacitors 2222 philips 15Kg-cm	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is	OCR Scan	BLX95 7Z66943	PDF
Untitled Abstract: No abstract text available Text: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bbS3T31 O220AB BUK452-1OOA/B BUK452 -100A -100B BUK452-100A/B	PDF
BUK436-100B Abstract: BUK436-100A Text: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK436-1OOA/B BUK436 -100A -100B 125sJ CJ0304b4 BUK436-100B BUK436-100A	PDF
transistor A4t 85 Abstract: 3b5 transistor transistor A4t 45 transistor A4t Text: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLU30/12 OT-119) 711GfiEti transistor A4t 85 3b5 transistor transistor A4t 45 transistor A4t	PDF
Untitled Abstract: No abstract text available Text: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bb53R31 00304bQ BUK436-100A/B BUK436 -100A -100B 0Q304b4	PDF
BUK436-100A Abstract: BUK436-100B Text: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK436-100A/B -100A -100B 00304b4 BUK436-1OOA/B BUK436-100A BUK436-100B	PDF
transistor 400v 3a 40w Abstract: 40w electronic ballast BUL45A crossover LE17 Text: bOE J> • fil331fl7 DDGOSDS b27 « S M L B SEMELAB PLC SEMELAB " T - 3 3 - /Í BUL45A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M EC H A N IC A L D A T A Dimensions in mm Designed for use in electronic ballast	OCR Scan	fil331fl7 300jiS transistor 400v 3a 40w 40w electronic ballast BUL45A crossover LE17	PDF
SMO-14 Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426 Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication	Original	MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426	PDF
Untitled Abstract: No abstract text available Text: March 1998 F/\IRCHII_ID M ICDNDUCTO R tm FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's	OCR Scan	FDN338P FDN338P	PDF
D 1062 transistor Abstract: BFE505 transistor k 2847 transistor 1234 npn TRansistor L 701 Dual RF transistor dual transistor O2 Text: Philips Semiconductors Product specification NPN wideband differential transistor FEATURES BFE505 PINNING - SOT353B • Small size SYMBOL PIN • High power gain at low bias current and voltage DESCRIPTION bi 1 base 1 • Temperature matched e 2 emitter • Balanced configuration	OCR Scan	BFE505 OT353 OT353B MBG192 711Dfl2b OT353. 711DflSb D 1062 transistor BFE505 transistor k 2847 transistor 1234 npn TRansistor L 701 Dual RF transistor dual transistor O2	PDF
Untitled Abstract: No abstract text available Text: P D - 9.1123 International ^Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Vces = 600V • Short circuit rated -10ps @125°C, VGe = 15V • Switching-loss rating includes all "tail" losses	OCR Scan	IRGPC50KD2 -10ps T0-247AC C-960 SS452	PDF
NPN Silicon Epitaxial Planar Transistor Abstract: MZ0912B50Y TACAN Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting	OCR Scan	MZ0912B50Y NPN Silicon Epitaxial Planar Transistor MZ0912B50Y TACAN	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b flbSion Package Ordering Code BUZ 76 400 V 3A 1.8 £2 TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b	OCR Scan	O-220 C67078-S1315-A2 8E35LD5	PDF

rp110n261 Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5 Text: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC	Original	RP110x 150mA EA-239-131023 Room403, Room109, 10F-1, rp110n261 RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5	PDF
Untitled Abstract: No abstract text available Text: S IE M E N S NPN Silicon High-Voltage Transistor B F 622 • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F 623 PNP Type Marking Ordering Code	OCR Scan	Q62702-F1052 OT-89	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C	OCR Scan	BFS17P Q62702-F940 OT-23 0535b05 fi235b05 500MHz flE35b05	PDF
2N6550 Abstract: 10NV transistor B27 Text: Databook.fxp 1/13/99 2:09 PM Page B-27 B-27 01/99 2N6550 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA =25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current	Original	2N6550 NJ450L 2N6550 10NV transistor B27	PDF
a2724 Abstract: Transistor A23 CFB0230A 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder Text: CFB0230A CFB0230A CFB023ÛA 32-bit Carry Select Adder description: CFB0230A uses a fast carry-select algorithm to perforin an addition of two 32-bit numbers. LOGIC SYMBOL : CI A31 :0 B31:0 CFB0230A CO + I S31:0 TïflE-f32 INPUTS LOADING IN TRANSISTOR PAIRS) :	OCR Scan	CFB0230A CFB023 32-bit CFB0230A flE-f32) a2724 Transistor A23 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder	PDF
alu 74181 Abstract: 25B22 f422 S2 f19 Text: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),	OCR Scan	CFT1812A CFT1812A 32-bit 74181-type) CFT1810A alu 74181 25B22 f422 S2 f19	PDF
2N6449 Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116 Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current	Original	2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116	PDF
ETK81-050 Abstract: B-26 M102 T151 Text: ETK81-O5O 50a S ± /'7 — ¡V POWER TRANSISTOR MODULE Features 7 • • ;- * * y • hFE/P'Bjv.' • - fa r Including Free Wheeling Diode High DC Current Gain Insulated Type \| Applications Power Switching • AC • DC Ç — AC Motor Controls • Uninterruptible Power Supply	OCR Scan	ETK81-050 E82988 16f8f 19S24 73i-7in l95t/R89 Shl50 B-26 M102 T151	PDF
C956 Abstract: 600V 25A Ultrafast Diode IRGPC50KD2 C955 c959 E30j C958 27e transistor transistor c954 Text: P D - 9.1123 International [ïë§Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V •S h o rt circuit rated - 10 \|js @125°C, Vg e = 15V • Switching-loss rating includes all "tail" losses	OCR Scan	IRGPC50KD2 -10ms O-247AC SS452 C-960 C956 600V 25A Ultrafast Diode IRGPC50KD2 C955 c959 E30j C958 27e transistor transistor c954	PDF
Untitled Abstract: No abstract text available Text: ETK81-O5O 50a S ± /'7 — ¡V POWER TRANSISTOR MODULE Features 7 • • ;- * * y • hFE/P'Bjv.' • - fa r Including Free Wheeling Diode High DC Current Gain Insulated Type \| Applications Power Switching • AC • DC Ç — AC Motor Controls • Uninterruptible Power Supply	OCR Scan	ETK81-O5O Ib231 I95t/R89)	PDF

TRANSISTOR B27 Search Results

TRANSISTOR B27 Result Highlights (5)

TRANSISTOR B27 Datasheets Context Search

BLX95

Untitled

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BUK436-100B

transistor A4t 85

Untitled

BUK436-100A

transistor 400v 3a 40w

SMO-14

Untitled

D 1062 transistor

Untitled

NPN Silicon Epitaxial Planar Transistor

Untitled

rp110n261

Untitled

Untitled

2N6550

a2724

alu 74181

2N6449

ETK81-050

C956

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