Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRGPC50KD2 Search Results

    IRGPC50KD2 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRGPC50KD2 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST SOFT RECOVERY DIODE Scan PDF
    IRGPC50KD2 International Rectifier Short Circuit Rated UltraFast CoPack IGBT Scan PDF
    IRGPC50KD2 International Rectifier IGBT Scan PDF
    IRGPC50KD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRGPC50KD2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
    Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U


    Original     		PDF IRGB420U IRGP420U IRGB430U IRGP430U IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGKI200F06 IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    IR2133

    Abstract: IR2233 ir2233j application IR2133 3 phase IR2235 application note ir2233j IR2133J IRG4PH40KD IR2135 MV-CA IR2135
    Text: Preliminary Data Sheet No. PD60107K IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation · · · · · · Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60107K IR2133 IR2135 IR2233 IR2235 0V/12V IR213rature IRG4PH50KD) IR2133J IRG4ZH71KD) ir2233j application IR2133 3 phase IR2235 application note ir2233j IRG4PH40KD IR2135 MV-CA IR2135

    application note ir2233j

    Abstract: IR2133J IR2235 ir2233j application IR2133 IR2133 application note
    Text: Data Sheet No. PD60107-Q IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60107-Q IR2133/IR2135 IR2233/IR2235 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) application note ir2233j IR2235 ir2233j application IR2133 IR2133 application note

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


    Original     		PDF O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06

    IR2133 application note

    Abstract: IR2133 application notes
    Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and


    Original     		PDF PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V 28-Lead IR2133 application note IR2133 application notes

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    IR2133 application note

    Abstract: No abstract text available
    Text: Data Sheet No. PD60107-R IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60107-R IR2133/IR2135 IR2233/IR2235 0V/12V IR2133IR2135/IR2233I IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead IR2133 application note

    IR2133 application note

    Abstract: mosfet 1200V 40A ax1500 IGBT mod igbt 500V 22A AX-7506-00 SCOP 200-002
    Text: Data Sheet No. PD60107 rev.V IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and


    Original     		PDF PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V IR2233J 44-Lead IR2235J 28-Lead IR2133 IR2133 application note mosfet 1200V 40A ax1500 IGBT mod igbt 500V 22A AX-7506-00 SCOP 200-002

    IR2132 APPLICATION NOTE

    Abstract: IR2130 APPLICATION NOTE ir2130 Mosfet driver IR2130 ir2130 application IR2130 3 phase irf840 power supply application IR2130 Drive circuit for IGBT using IR2130 IR2130S
    Text: Data Sheet No. PD60019J IR2130/IR2132 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V


    Original     		PDF PD60019J IR2130/IR2132 IR2130) IR2132) IR2130/IR2132 MOS90245 IR2132 APPLICATION NOTE IR2130 APPLICATION NOTE ir2130 Mosfet driver IR2130 ir2130 application IR2130 3 phase irf840 power supply application IR2130 Drive circuit for IGBT using IR2130 IR2130S

    IR2133J

    Abstract: irg4p*50kd IR2133 IR2135 IR2233 IR2235
    Text: Back Preliminary Data Sheet No. PD60107J IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage


    Original     		PDF PD60107J IR2133 IR2135 IR2233 IR2235 0V/12V Descript90245 IR2133J irg4p*50kd IR2135 IR2235

    IR2130 APPLICATION NOTE

    Abstract: IR2132 APPLICATION NOTE ir2132j application IR2130 ir2130 application ir2130 typical application Drive circuit for IGBT using IR2130 IR2130 irf840 power supply power supply IRF830 APPLICATION
    Text: Data Sheet No. PD60019-M IR2130/IR2132 J (S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60019-M IR2130/IR2132 IR2130) IR2132) IR2130/IR2132 IR2130J/IR2132J IRGPC50KD2) 28-Lead IR2130 APPLICATION NOTE IR2132 APPLICATION NOTE ir2132j application IR2130 ir2130 application ir2130 typical application Drive circuit for IGBT using IR2130 IR2130 irf840 power supply power supply IRF830 APPLICATION

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		PDF HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3

    IR2133

    Abstract: ir2233j application IR2133J IR2233 PD60107-P
    Text: Data Sheet No. PD60107-P IR2133 5 (J&S) IR2233(5) (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60107-P IR2133 IR2233 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) ir2233j application PD60107-P

    B85 diode

    Abstract: DIODE B89 IRGPC50KD2
    Text: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features


    OCR Scan     		PDF IRGPC50KD2 -10jj3 O-247AC B85 diode DIODE B89 IRGPC50KD2

    C959

    Abstract: transistor c956 C956 IRGPC50KD2 c954 30A to-247ac Diode IOR 10 dc
    Text: P D - 9.1123 International »»Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c V ces = 600V • Short circuit rated -10|js @ 125°C, VQE = 15V • Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF IRGPC50KD2 50KD2 O-247AC C-960 C959 transistor c956 C956 c954 30A to-247ac Diode IOR 10 dc

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1123 International ^Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Vces = 600V • Short circuit rated -10ps @125°C, VGe = 15V • Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF IRGPC50KD2 -10ps T0-247AC C-960 SS452

    C956

    Abstract: 600V 25A Ultrafast Diode IRGPC50KD2 C955 c959 E30j C958 27e transistor transistor c954
    Text: P D - 9.1123 International [ïë§Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V •S h o rt circuit rated - 10 |js @125°C, Vg e = 15V • Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF IRGPC50KD2 -10ms O-247AC SS452 C-960 C956 600V 25A Ultrafast Diode IRGPC50KD2 C955 c959 E30j C958 27e transistor transistor c954

    c959

    Abstract: IRGPC50KD2
    Text: IOR IRGPC50KD2 Electrical Characteristics T j = 25°C unless otherwise specified Parameter Switchin g Characteristics @ T j = tr WiofO t( Eon E oH Ete ts c td(on) tr td(off) tf Ete Le C»s Coes C re s trr Min. Typ. Max. Units Total Gate Charge (tum-on)


    OCR Scan     		PDF IRGPC50KD2 250pA C-959 O-247AC C-960 c959 IRGPC50KD2

    IRG4PC50KD

    Abstract: No abstract text available
    Text: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,


    OCR Scan     		PDF IRG4PC50KD IRG4PC50KD

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60019J International 1QR Rectifier_ IR 2 1 3 0 /IR 2 1 3 2 PHASE BRIDGE DRIVER 3 Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    OCR Scan     		PDF PD60019J IR2130/IR2132

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD60107J International IQ R Rectifier IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features Product Summary • F loa ting ch a n n e l d e sig n e d for b o o tstra p op era tion F ully o p e ra tio n a l to + 6 0 0 V o r+ 1 2 0 0 V


    OCR Scan     		PDF PD60107J IR2133 IR2135 IR2233 IR2235 IR2133/IR2135/IR2233/IR2235 IR2233J IRG4PH30KD) IRG4PH40KD)

    IRGPH40KD2

    Abstract: IRGPH20K irgph30k
    Text: HIRectifier IGBTs International UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency— Optim ized for Pow er Conversion Part Number V CES Collector to Emitter Voltage M a x V CE(on) Collector to Emitter Saturation Voltage


    OCR Scan     		PDF IRGBC20K IRGBC30K IRGBC40K IRGPC20K IRGPC30K IRGPC40K IRGPC50K O-220AB IRGBC20KD IRGNIN050K06 IRGPH40KD2 IRGPH20K irgph30k