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    TRANSISTOR A131 Search Results

    TRANSISTOR A131 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor A1315

    Abstract: A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


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    PDF 2SA1315 2SC3328 Transistor A1315 A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328

    Transistor A1315

    Abstract: 2sa1315
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


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    PDF 2SA1315 2SC3328 O-92MOD Transistor A1315 2sa1315

    Transistor A1315

    Abstract: A1315 transistor 2Sa1315 A1315 2SC3328
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)


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    PDF 2SA1315 2SC3328 Transistor A1315 A1315 transistor 2Sa1315 A1315 2SC3328

    Transistor A1315

    Abstract: 2SA1315 A1315 transistor 2SC3328 A1315
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)


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    PDF 2SA1315 2SC3328 Transistor A1315 2SA1315 A1315 transistor 2SC3328 A1315

    A1318

    Abstract: HSOP36 HSOP36R LB11975 3 phase regenerative braking 2712PH
    Text: Ordering number : ENN6497A Monolithic Digital IC LB11975 High-Speed CD-ROM Spindle Motor Driver IC Overview Package Dimensions The LB11975 is a monolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and DVD-ROM drives. To minimize heat generation


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    PDF ENN6497A LB11975 LB11975 A1318 HSOP36 HSOP36R 3 phase regenerative braking 2712PH

    transistor PNP A124 EQUIVALENT

    Abstract: transistor PNP A124 E3G-R13-G E3G-R17-G E3G-MR19-G e3g ml79 g E3G-MR19T-G E3G-L77 E3G-ML79T-G E278-E2-04-X
    Text: F502-EN2-04.book Seite 119 Dienstag, 26. Juli 2005 5:48 17 Photoelectric switch with built-in amplifier long distance in plastic housing E3G E3G Retroreflective Models • Sensing Distance of 10 m, with polarized light to detect shiny objects. • Operation stability monitored ba the


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    PDF F502-EN2-04 E39-L129-G E3G-MR19-G) E39-L129-G) E278-E2-04-X transistor PNP A124 EQUIVALENT transistor PNP A124 E3G-R13-G E3G-R17-G E3G-MR19-G e3g ml79 g E3G-MR19T-G E3G-L77 E3G-ML79T-G E278-E2-04-X

    induction cooker fault finding diagrams

    Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
    Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when


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    PDF Z8115 MIL-HDBK-217E S57-1 induction cooker fault finding diagrams MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200

    OD232

    Abstract: W472-E1-07 CJ2M ARC M3D CJ1W-OD202 CJ1W-OD212 CJ1W-SCU31-V1 Sysmac CJ1M ID211 OD212 CJ1M A143* PNP switching transistor
    Text: Cat. No. W472-E1-07 SYSMAC CJ Series CJ2H-CPU6@-EIP CJ2H-CPU6@ CJ2M-CPU@@ CJ2 CPU Unit Hardware USER’S MANUAL  OMRON, 2008 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form, or


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    PDF W472-E1-07 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: OD232 W472-E1-07 CJ2M ARC M3D CJ1W-OD202 CJ1W-OD212 CJ1W-SCU31-V1 Sysmac CJ1M ID211 OD212 CJ1M A143* PNP switching transistor

    d313 TRANSISTOR equivalent

    Abstract: 207a smd ic smd diode 106E mil-std-202F 101D 6822 TRANSISTOR equivalent transistor d323 MIL-STD-202F-201A transistor D313 smd diode 101a D313 VOLTAGE REGULATOR
    Text: RELIABILITY TESTING OF SEMICONDUCTOR DEVICES V. RELIABILITY TESTING OF SEMICONDUCTOR DEVICES 1. WHAT IS RELIABILITY TESTING? 2. RELIABILITY TEST METHODS 3. ACCELERATED LIFE TEST 4. ANALYSIS OF TEST RESULTS 4.1 HOW TO USE WEIBULL PROBABILITY PAPER 3. 4.1.1 APPLICATION OF WEIBULL PROBABILITY PAPER


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    PDF R69-20 d313 TRANSISTOR equivalent 207a smd ic smd diode 106E mil-std-202F 101D 6822 TRANSISTOR equivalent transistor d323 MIL-STD-202F-201A transistor D313 smd diode 101a D313 VOLTAGE REGULATOR

    Transistor A131

    Abstract: BT124 T68A staking T46-2-9 T46-4-9 transistor t44 T441M TRANSISTOR R52 R53 CA
    Text: 69 Accessories Wire-Wrap Terminals for .042” Holes Terminals: Vector Wiring Terminals are useful for breadboarding or prototyping using Vectorbord plugbords TM and accessories. Individual stamped and/or machine terminals are provided in convenient package quantities. Tools for insertion and staking


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    PDF T44/M T46-2-9/M T46-3-9/C T46-3-9/M T46-4-9/C T46-4-9/M T46-5-9/C T46-5-9/M T49/C T49/M Transistor A131 BT124 T68A staking T46-2-9 T46-4-9 transistor t44 T441M TRANSISTOR R52 R53 CA

    k3225

    Abstract: T68A Transistor A131 018DIAMETER K322M K322 vectorbord T42-1 P149A R53C r50 transistor
    Text: Wire-Wrap Terminals for .042" Holes T44, T68 Bifurcated Terminals: Vector Wiring Terminals are useful for breadboarding or prototyping using Vectorbord plugbords and accessories. Individual stamped and/or machine terminals are provided in convenient package quantities. Tools for insertion and staking are also available.


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    PDF T124/M R32/C R32/M T124-040/500 k3225 T68A Transistor A131 018DIAMETER K322M K322 vectorbord T42-1 P149A R53C r50 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistor VDS /D = 400 V = 5.5 A ^ D S |o n = • 1 BUZ 60 Q N channel • Enhancement mode • Avalanche-proof • Package: TO-220 A B 1) Type Ordering code BUZ 60 C67078-A1312-A2 Maximum Ratings Parameter Symbol Values Unit


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    PDF O-220 C67078-A1312-A2

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


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    PDF ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M TRANSISTOR REPLACEMENT GUIDE ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE MC1305P

    SFC2741

    Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
    Text: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am­


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    PDF ULN-2054A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M T2741WV ULN2151D TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E

    K247

    Abstract: k143 K144 3SK280 2SC5016 Block DIAGRAM LED TV k144 transistor M 5265 P 2SC3312 K219
    Text: Application Block Diagrams • V id e o A pplications 4; Color TV NTSC — (1) A N 5265 Note) T he tran sistors and diodes listed below can be used fo r the perip h­ eral circuits in this block diagram . • G eneral purpose transistor: 2SA1310. 2S C 3312 (R efer to


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    PDF 2SA1310. A1310, C3312, 2SC3932, 2SC5016 3SK241. 3SK280 MA353. K247 k143 K144 Block DIAGRAM LED TV k144 transistor M 5265 P 2SC3312 K219

    LB 122 transistor

    Abstract: 2N2907A surface mount 2N2907A HCT2907A JAN2N2907A ma131
    Text: OPTEK TEC H NO LO GY INC 4flE » • L^SSaO 000145 1 110 ■ Product Bulletin OTK _ £>j OPTEK M a y 1989 Surface Mount PNP General Purpose Transistor Type HCT2907A Features T 2/7 -Q°i Absolute Maximum Ratings TA = 25°C unless otherwise noted) • Surface mountable on ceramic or printed


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    PDF HCT2907A 2N2907A MIL-S-19500 LB 122 transistor 2N2907A surface mount 2N2907A JAN2N2907A ma131

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6497A Monolithic Digital 1C LB11975 SAÑYO High-Speed CD-ROM Spindle Motor Driver IC Overview Package Dimensions The LB11975 is a m onolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and D VD -RO M drives. To m inim ize heat generation


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    PDF ENN6497A LB11975 LB11975

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


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    PDF 23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A

    Transistor A1315

    Abstract: A1315 transistor 530 transistor Audio Output Transistor Amplifier regulator A732 A706 transistor transistor a781 A788 TBA641 a1315
    Text: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A3065 Video Amplifier TBA970 Chroma Processing NTSC AiA746, n A780, M 7 8 1 , /uA787, M 7 8 8 Chroma Processing PAL TAA630S, TBA510, TBA520, TBA540, TBA560C, TBA990


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    PDF //A3064 //A3065 TBA970 //A746, //A780, //A781, //A787, //A788 TAA630S, TBA510, Transistor A1315 A1315 transistor 530 transistor Audio Output Transistor Amplifier regulator A732 A706 transistor transistor a781 A788 TBA641 a1315

    A1306 TRANSISTOR

    Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
    Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)


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    PDF O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor

    Transistor A1315

    Abstract: transistor audio preamplifier circuit diagram TBA970 A706 transistor TBA800 TAA630S TBA510 TBA520 transistor a781 A1315 transistor
    Text: CO N SUM ER CIRCU IT SELECTIO N GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A3065 Video Amplifier TBA970 Chroma Processing NTSC AiA746, n A780, M 7 8 1 , /uA787, M 7 8 8 Chroma Processing PAL TAA630S, TBA510, TBA520, TBA540, TBA560C, TBA990


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    PDF //A3064 //A3065 TBA970 //A746, //A780, //A781, //A787, //A788 TAA630S, TBA510, Transistor A1315 transistor audio preamplifier circuit diagram TBA970 A706 transistor TBA800 TAA630S TBA510 TBA520 transistor a781 A1315 transistor

    DF RV transistor

    Abstract: an7060 MN6626 7337n A1310 2SC3312 2SA1310 2SD1449 2sd1975
    Text: Application Block Diagrams I Audio Applications 1 CD Player M N 6 6 2 7 1 D ig ita l S e rv o ¡1 S ig n a l P r o c e s s in g DF DAC -► M N6626 M N6475A D ig ita i S e rv o P ro c e s s e r M N 6 6 5 0 A (D ig ita l S e rv o 1) LED LN 66A C o n tr o lle r M ic r o c o m p u te r


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    PDF N6626 N6475A N1870 PNA4601 A1310 2SC3312 AN7060 AX7062N 2SB1371, 2SD1975. DF RV transistor MN6626 7337n 2SC3312 2SA1310 2SD1449 2sd1975

    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


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    PDF LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902