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    2SA1310 Search Results

    2SA1310 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1310 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1310 Panasonic PNP Transistor Original PDF
    2SA1310 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1310 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1310 Unknown Cross Reference Datasheet Scan PDF
    2SA1310 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1310 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1310 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1310 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1310 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1310R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1310R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1310S Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1310S Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1310T Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1310T Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SA1310 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3312

    Abstract: 2SA1310 IC1006
    Text: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


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    PDF 2SC3312 2SA1310 2SC3312 2SA1310 IC1006

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1310 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5


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    PDF 2002/95/EC) 2SA1310 2SC3312 15nteed

    2SC3312

    Abstract: 2SC331 2SA1310
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Optimum for high-density mounting


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    PDF 2002/95/EC) 2SC3312 2SA1310 2SC3312 2SC331 2SA1310

    2SA1310

    Abstract: 2SC3312
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5


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    PDF 2002/95/EC) 2SC3312 2SA1310 2SA1310 2SC3312

    2SC3312

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5


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    PDF 2002/95/EC) 2SC3312 2SA1310 2SC3312

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5


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    PDF 2002/95/EC) 2SC3312 2SA1310

    2SC3312

    Abstract: 2SA1310
    Text: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


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    PDF 2SC3312 2SA1310 15nductor 2SC3312 2SA1310

    2SA1310

    Abstract: 2SC3312 Low-Frequency Low-Noise PNP transistor
    Text: Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage


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    PDF 2SA1310 2SC3312 2SA1310 2SC3312 Low-Frequency Low-Noise PNP transistor

    2SA1310

    Abstract: 2SC3312
    Text: Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm ● ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage


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    PDF 2SA1310 2SC3312 2SA1310 2SC3312

    2SA1310

    Abstract: 2SC3312
    Text: Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage


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    PDF 2SA1310 2SC3312 2SA1310 2SC3312

    2SA1310

    Abstract: 2SC3312
    Text: Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping


    Original
    PDF 2SC3312 2SA1310 2SA1310 2SC3312

    2SA1310

    Abstract: 2SC3312
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5


    Original
    PDF 2002/95/EC) 2SC3312 2SA1310 2SA1310 2SC3312

    2SA1310

    Abstract: 2SC3312
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1310 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Allowing supply with the radial taping


    Original
    PDF 2002/95/EC) 2SA1310 2SC3312 2SA1310 2SC3312

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p


    Original
    PDF 2002/95/EC) 2SC3312 2SA1310

    2SC3312

    Abstract: 2SA1310
    Text: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


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    PDF 2SC3312 2SA1310 2SC3312 2SA1310

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    K247

    Abstract: k143 K144 3SK280 2SC5016 Block DIAGRAM LED TV k144 transistor M 5265 P 2SC3312 K219
    Text: Application Block Diagrams • V id e o A pplications 4; Color TV NTSC — (1) A N 5265 Note) T he tran sistors and diodes listed below can be used fo r the perip h­ eral circuits in this block diagram . • G eneral purpose transistor: 2SA1310. 2S C 3312 (R efer to


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    PDF 2SA1310. A1310, C3312, 2SC3932, 2SC5016 3SK241. 3SK280 MA353. K247 k143 K144 Block DIAGRAM LED TV k144 transistor M 5265 P 2SC3312 K219

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


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    PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


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    PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


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    PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    8893 single chip tv processor

    Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
    Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7


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    PDF MN171608/9 LN66A MN12510 AN3813/14/15 AN3840N PNA4601M MN187* MN6750* AN3126/29 AN5179/82N 8893 single chip tv processor transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn662741

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


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    PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    A720 transistor

    Abstract: AN7205 AN7421 transistor A720 AN7420 AN7024 AN7220 AN7203 AN7148 AN7108
    Text: Application Block Diagrams • Audio Applications 3 Headphone Stereo/Microcassette/Radio (Headphone Stereo (3V, 1.5V) Antenna A A N 7 2 3 5 S ( 5 V ) ^ Mote) T he tran sistors and diodes listed below can be used for the peripheral circuits in this Y r block diagram


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    PDF AN7007S/S AN7203 AN7205 AN7213 AN7017S/SB AN7220 AN7025K/S AN7421 AN7108 AN7109S A720 transistor transistor A720 AN7420 AN7024 AN7148