NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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nec 2571 4 pin
Abstract: nec 2571 3771 nec ZO 103 MA 75 603 2SC4957 2SC4957-T1 2SC4957-T2 marking 2748 transistor marking T83 ghz
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.3 pF TYP.
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2SC4957
2SC4957-T2
2SC4957-T1
nec 2571 4 pin
nec 2571
3771 nec
ZO 103 MA 75 603
2SC4957
2SC4957-T1
2SC4957-T2
marking 2748
transistor marking T83 ghz
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Untitled
Abstract: No abstract text available
Text: BLF8G10LS-160V Power LDMOS transistor Rev. 2 — 24 October 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.
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BLF8G10LS-160V
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1961 30 TRANSISTOR
Abstract: No abstract text available
Text: BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 1 — 19 May 2011 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance
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BLF8G10L-160;
BLF8G10LS-160
BLF8G10L-160
8G10LS-160
1961 30 TRANSISTOR
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RO3006
Abstract: BLF7G10L
Text: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 3 — 16 February 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance
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BLF7G10L-250;
BLF7G10LS-250
BLF7G10L-250
7G10LS-250
RO3006
BLF7G10L
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BLF7G10L-250
Abstract: BLF7G10
Text: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 1 — 25 February 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance
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BLF7G10L-250;
BLF7G10LS-250
BLF7G10L-250
7G10LS-250
BLF7G10
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Untitled
Abstract: No abstract text available
Text: BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 3 — 16 February 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance
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BLF8G10L-160;
BLF8G10LS-160
BLF8G10L-160
8G10LS-160
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D2375
Abstract: BLF6G10S-45 RF35
Text: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10S-45
BLF6G10S-45
D2375
RF35
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transistor J333
Abstract: J333 J333 transistor
Text: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 2 — 11 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance
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BLF7G10L-250;
BLF7G10LS-250
BLF7G10L-250
7G10LS-250
transistor J333
J333
J333 transistor
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Untitled
Abstract: No abstract text available
Text: BLF8G10LS-160V Power LDMOS transistor Rev. 1 — 13 July 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz. Table 1.
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BLF8G10LS-160V
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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BLX93A
Abstract: No abstract text available
Text: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe
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7110flEb
BLX93A
711002b
002705b
T-33-07
BLX93A
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transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
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2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
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BLX93A
Abstract: high power npn UHF transistor BLX93 T-33-07 TRANSISTOR D 471 IEC134 47pH
Text: PH IL IR-S INTERNATIONAL MIE D Q 71LOä2b GG27àM7 3 B PHIN BLX93A MA IN TE N AN CE TYPE ^ - T -3 3 -Û 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX93A
-T-33-Ã
470series
BLX93A
high power npn UHF transistor
BLX93
T-33-07
TRANSISTOR D 471
IEC134
47pH
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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BUK7508-55
Abstract: capacitor .75j
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7508-55
T0220AB
BUK7508-55
capacitor .75j
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7524-55
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7508-55
T0220AB
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for
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/Nov/02
RD30HVF1
175MHz
RD30HVF1
l75MHz
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NEC D 553 C
Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.
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2SC4957
2SC4957-T1
2SC4957-T2
Ple-107
NEC D 553 C
TRANSISTOR MAC 223
NEC IC D 553 C
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