Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SB1020 NPN Search Results

    TRANSISTOR 2SB1020 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SB1020 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


    Original     		2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    2sc1943 circuit diagram

    Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,


    Original     		BU323Z TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2sc1943 circuit diagram TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic PDF

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


    Original     		BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


    Original     		BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100 PDF

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


    Original     		2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100 PDF

    BU108

    Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A


    Original     		BUV22 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent PDF

    IR3001

    Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		MJF15030 MJF15031 MJE15030 MJE15031 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 IR3001 pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c PDF

    2SA1046

    Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and


    Original     		2N6547 CASE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA1046 TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547 PDF

    BU108

    Abstract: 2SA1046 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


    Original     		2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100 PDF

    2SA1046

    Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.


    Original     		2N6251 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SA1046 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936 PDF

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033 PDF

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


    Original     		MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100 PDF

    TIP35C transistor replacement

    Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V


    Original     		TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 TIP35C transistor replacement TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100 PDF

    pin configuration NPN transistor tip41c

    Abstract: TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT BU108 All similar transistor 2sa715 2SA699 TIP41A semiconductors TIP42A equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP41A TIP41B* TIP41C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C TIP41A TIP41B* TIP41C* pin configuration NPN transistor tip41c TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT BU108 All similar transistor 2sa715 2SA699 TIP41A semiconductors TIP42A equivalent PDF

    2SA1046

    Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


    Original     		2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement PDF

    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


    Original     		2N6274 2N6275 2N6277 2N6377 2N6277* POWER32 TIP73B TIP74 2SA1046 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100 PDF

    2sa1046

    Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0


    Original     		BDX33B, BDX33C, 33C/34B, 220AB BDX33B BDX33C* BDX34B BDX34C* TIP73B 2sa1046 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168 PDF

    MJ-12003

    Abstract: TIP32C 329 BU108 BD679 2N6285 equivalent bd139 equivalent 2SA49 PRF 374 MOTOROLA ST BDX53C BD602
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP31A TIP31B* TIP31C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.2 Vdc (Max) @ IC = 3.0 Adc


    Original     		TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C TIP31A TIP31B* TIP31C* MJ-12003 TIP32C 329 BU108 BD679 2N6285 equivalent bd139 equivalent 2SA49 PRF 374 MOTOROLA ST BDX53C BD602 PDF

    BD139

    Abstract: BU108 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY


    Original     		2N6055 2N6056 2N6056* TIP73B TIP74 TIP74A TIP74B TIP75 BD139 BU108 BU326 BU100 PDF

    transistor regulator tv

    Abstract: 2SC2242 2SC3346 2sd1407 2SA1012 transistor 2Sb1020 npn 2SC3558 2sd1408 transistor 2sd525 2sb1018
    Text: T0-220 Type Power Transistors TO-22QAB, TQ-220 dg Interchangeability List Type No. NPN TV chroma output 2SC1569 TV Audio output 2SC2242 TV Vertical output Ic TO-220AB Application PNP A) Pc (Tc=25°C) (W) Alternates Type No. TQ-220 NPN PNP 12.5 0.15 2SC2073


    OCR Scan     		T0-220 O-22QAB, TQ-220 2SC1569 2SC2242 2SC2073 2SD1052 2SD1052A 2SD880 2SC2233 transistor regulator tv 2SC3346 2sd1407 2SA1012 transistor 2Sb1020 npn 2SC3558 2sd1408 transistor 2sd525 2sb1018 PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF