y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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TRANSISTOR 1G
Abstract: No abstract text available
Text: Catalog 1307612 4 M V IV * Specialty Sockets Revised 7-01 TO-3 Power Transistor Sockets 8080-1G Series PERFORMANCE SPECIFICATIONS: FEATURES: The 8080- 1G family of TO-3 Power Transistor Sockets is used for both small and large signal devices. Used in power supplies, power amplifiers,
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8080-1G
8080-1G44
MIL-STD-202,
TRANSISTOR 1G
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NTE74123
Abstract: NTE74HC123 NTE74121 NTE74HC125 NTE74LS113 NTE74LS114 NTE74LS122 Q204 NTE74120 NTE74LS112A
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 16-Lead DIP, See Diag. 249
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NTE74110
14-LeadDIP,
NTE74111
16-LeadDIP,
NTE74LS112A,
NTE74S112
16-Lead
NTE74LS113,
NTE74S113
14-Lead
NTE74123
NTE74HC123
NTE74121
NTE74HC125
NTE74LS113
NTE74LS114
NTE74LS122
Q204
NTE74120
NTE74LS112A
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transistor npn double
Abstract: TO-39 CASE to ambient 2N1711 D73 transistor
Text: N AUER PHILIPS/DISCRETE b^E T> • bbS3*131 GD2ÔD73 275 2N1711 SILICON PLANAR TRANSISTOR N-P-N double diffused transistor in a TO-39 metal envelope designed fora wide variety of applications such as d.c. and wideband amplifiers. QUICK REFERENCE DATA Collector-base voltage open emitter
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2N1711
7Z593220
bb53T31
002007b
transistor npn double
TO-39 CASE to ambient
2N1711
D73 transistor
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 1K r i §3 1 PR Q 1 CLR Vc c
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NTE74110
14-Lead
NTE74111
16-Lead
NTE74LS113,
NTE74S113
NTE74LS112A,
NTE74S112
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8060-1G11
Abstract: No abstract text available
Text: 8060-1G11 Product Details - Tyco Electronics Page 1 of 2 Corporate Home | Electronic Components | Segments | Who We Are Search 8060-1G11 Product Details Transistor Sockets and Adapters Always EU RoHS/ELV Compliant Statement of No Image Available Compliance
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8060-1G11
8060-1G11
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Untitled
Abstract: No abstract text available
Text: 8060-1G11 Product Details - Tyco Electronics Page 1 of 2 Corporate Home | Electronic Components | Segments | Who We Are 8060-1G11 Product Details Transistor Sockets and Adapters Quick Links Always EU RoHS/ELV Compliant Statement of No Image Available Compliance
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8060-1G11
8060-1G11
CPR\08202007\TYEL\8060-1.
21-Aug-2007
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Untitled
Abstract: No abstract text available
Text: Product Number: 8060-1G11 1437504-4 Transistor Sockets and Adapters Product Type Features: Product Type = Socket Terminal Type = Contact Product Series = 8060 Series Sleeve Material = Brass Profile = Low Electrical Characteristics: Lead Length Accepted (mm [in]) = 3.96 – 5.54 [0.156 – 0.218]
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8060-1G11
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8060 transistor
Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,
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8060-1G11
8060-1G6
MIL-S-83502/2
MIL-S-83502/5.
8060 transistor
104 csk
8060-1G6
M8058-1G18
8060-1G12
1G22
d 317 transistor
transistor 373
transistor c 373
1g45
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transistor 373
Abstract: 8060 transistor
Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe
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8060-1G11
8060-1G6
MIL-S-83502/2
M1L-S-83502/5.
transistor 373
8060 transistor
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3SK257
Abstract: marking h2
Text: TOSHIBA 3SK257 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK257 Unit in mm TV TUNER, VHF RF AMPLIFIER APPLICATIONS. FM TUNER APPLICATIONS. TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • • 2.1 + 0 . 1 Superior Cross Modulation Performance.
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3SK257
3SK257
marking h2
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IF1322
Abstract: IN1322B NJ132L DIFFERENTIAL/VCW23-5G-2-
Text: 8/2014 IF1322A, IN1322B N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ ∙ Absolute maximum ratings at TA = 25oC Low Noise, High Gain Amplifier Reverse Gate Source & Gate Drain Voltage -20V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation
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IF1322A,
IN1322B
480mW
-65oC
150oC
IF1322
IF1322
IN1322B
NJ132L
DIFFERENTIAL/VCW23-5G-2-
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c185 transistor
Abstract: No abstract text available
Text: TOSHIBA 3SK226 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 <; \c 1 1 Unit in mm TV TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. • • • + 0.2 2 . 9 - Cl3 Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.
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3SK226
015pF
c185 transistor
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2SC2753
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC2753 U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATION. • Low Noise Figure, High Gain NF = 1.5dB, |S21e|2 = 16dB f=500M Hz NF = 1.7dB, |S21eP = 10.5dB (f=lG H z) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC2753
S21eP
SC-43
--j50
2SC2753
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Marking G1s
Abstract: No abstract text available
Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF
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bbS3131
BF992R
OT143R
Marking G1s
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Untitled
Abstract: No abstract text available
Text: t>LS3T31 0024737 T4T « A P X N AMER PHILIPS/DISCRETE BF990AR L7E T> J V. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 R microminiature envelope with source and substrate interconnected, intended for U H F applications, such as U H F television tuners and
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LS3T31
BF990AR
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transistor Kd 505
Abstract: k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6
Text: TH IS DRAW ING IS A C O N TR O LLE D DO C U M EN T. REVISIONS T ^ st DATE - p 0 0 28N0V2006 ECO — 05 — Ö9 78 8058 & 8060 Series DWN APVD Kb i/ n d e s c r ip t io n L J Transisto r Sockets 8060-1G11 8060-1G6 FEATURES: — 1^ PERFORMANCE SPECIFICATIONS:
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28N0V2006
8060-1G11
8060-1G6
MIL-S-S3502/2
MIL-S-83502/5.
transistor Kd 505
k534
TRANSISTOR D410
transistor DA 218
b058
8060 transistor
805S-IG32
1G22
1G5.1
8060-1G6
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Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details 8060-1G17 Product Details Live Product Chat
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8060-1G17
8060-1G17
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Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details 8060-1G12 Product Details Live Product Chat
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8060-1G12
8060-1G12
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PDF
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Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details 8060-1G13 Product Details Live Product Chat
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8060-1G13
8060-1G13
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PDF
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Untitled
Abstract: No abstract text available
Text: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details M8058-1G19 Product Details
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M8058-1G19
M8058-1G19
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PDF
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Untitled
Abstract: No abstract text available
Text: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Socket/C ard Products > Product Feature Selector > Product Details M8058-1G18 Product Details
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M8058-1G18
M8058-1G18
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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